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T H AT

Corporation

FEATURES

4 Matched NPN Transistors (300)

4 Matched PNP Transistors (320)

2 Matched NPNs and PNPs (340)

4 Matched NP6N - 4 Matched PNP (380)

Monolithic Construction

Low Noise

- 0.75

nV Hz

(

PNP

)

- 0.8

nV Hz

(

NPN

)

High Speed

- f

= 350 MHz (NPN)

- f

= 325 MHz (PNP)

Excellent Matching – 500

typical

between devices of same gender

Dielectrically Isolated

36V V

CEO

Low-Noise Matched Transistor Array ICs

THAT 300 Series

APPLICATIONS

Microphone Preamplifiers

Current Sources

Current Mirrors

Log/Antilog Amplifiers

Multipliers

Servos

DESCRIPTION

The THAT300 Series ICs are large-geometry

monolithic NPN and/or PNP transistor arrays which

combine low noise, high speed and excellent para-

metric matching between devices of the same gender.

The large geometries typically result in 25

base

spreading resistance for the PNP devices (30

for

the NPNs), producing 0.75

nV Hz

voltage noise

(0.8

nV Hz

for the NPNs). This makes the 300

Series an ideal choice for low-noise amplifier input

stages.

Fabricated on a Complementary Bipolar Dielec-

trically Isolated process, each transistor is electri-

cally isolated from the others by a layer of insulating

oxide. The resulting low collector-to-substrate capac-

itance produces a typical NPN f

of 350 MHz,

325 MHz for the PNPs. This delivers ac performance

similar to discrete 2N3904- and 2N3906-class de-

vices. Dielectric isolation also minimizes crosstalk

and provides complete DC isolation.

Substrate biasing is not required for normal op-

eration, though the substrate should be grounded to

optimize speed and minimize inter-device crosstalk.

The monolithic construction assures excellent pa-

rameter matching and tracking over temperature.

Part Number

THAT300P

Configuration

4-Matched NPN Transistors

Package

DIP14

SO14

DIP14

THAT300S

THAT320P

4- Matched PNP Transistors

THAT320S

THAT340P

THAT340S

THAT380G

2 Matched NPN Transistors and

2 Matched PNP Transistors

4 Matched NPN Transistors and

4 Matched PNP Transistors

Table 1. Ordering Info

SO14

DIP14

SO14

Individual Die

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

Page 2

THAT300 Series Transistor Arrays

SPECIFICATIONS

Maximum Ratings (T

= 25°C)

Parameter

NPN Collector-Emitter Voltage

NPN Collector-Base Voltage

NPN Emitter-Base Voltage

NPN Collector Current

NPN Emitter Current

PNP Collector-Emitter Voltage

PNP Collector-Base Voltage

PNP Emitter-Base Voltage

PNP Collector Current

PNP Emitter Current

Collector-Collector Voltage

Emitter-Emitter Voltage

Operating Temperature Range

Maximum Junction Temperature

Storage Temperature

Symbol

CEO

CBO

EBO

C MAX

E MAX

CEO

CBO

EBO

C MAX

E MAX

JMAX

STORE

-45

= 1 mAdc, I

= 0

= 10

mAdc,

= 0

= 100

mAdc,

= 0

Conditions

= 1 mAdc, I

= 0

=10

mAdc,

= 100

mAdc,

= 0

Min

–36

–5

–10

±100

Typ

—

–40

—

–20

±200

—

150

125

—

Max

—

Units

°C

THAT 300

SUB

THAT 320

SUB

Fig 1. 300 Pinout

Fig 2. 320 Pinout

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

600041 Rev B

Page 3

SPECIFICATIONS

(Cont’d)

THAT 340

SUB

GKH YK

PNP

NPN

PNP

NPN

PNP

17C1

18B

THAT

312

Fig 3. 340 Pinout

Fig 4. 380 Die layout

NPN Electrical Characteristics

Parameter

NPN Current Gain

Symbol

Conditions

= 10 V

= 1 mA

= 10

NPN Current Gain Matching

NPN Noise Voltage Density

NPN Gain-Bandwidth Product

= 10 V, I

= 1 mA

= 10 V, I

= 1 mA, 1 kHz

= 1 mA, V

= 10 V

—

100

0.8

350

—

Min

Typ

Max

Units

MHz

NPN

(THAT300: V

BE1

-V

BE2 ;

BE3

-V

BE4

) (THAT340: V

BE1

-V

BE2

)

= 1 mA

= 10

NPN

(THAT300: I

-I

B2,

-I

) (THAT340: I

-V

)

= 1 mA

= 10

NPN Collector-Base Leakage Current I

CBO

NPN Bulk Resistance

NPN Base Spreading Resistance

NPN Collector Saturation Voltage

NPN Output Capacitance

CE(SAT)

= 25 V

= 0 V, 10

< I

10 mA

= 10 V, I

= 1 mA

= 1 mA, I

= 100mA

= 10 V, I

= 0 mA, 100 kHz

—

±500

±5

0.05

—

±1500

—

±0.5

±3

NPN Collector-CollectorCapacitance (THAT300: Q1-Q2, Q3-Q4) (THAT340: Q1-Q2)

= 0 V, 100 kHz

0.7

1. All specifications subject to change without notice.

2. Unless otherwise noted, T

=25°C.

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

Page 4

THAT300 Series Transistor Arrays

SPECIFICATIONS

(Cont’d)

PNP Electrical Characteristics

Parameter

PNP Current Gain

Symbol

Conditions

= 10 V

= 1 mA

= 10

PNP Current Gain Matching

PNP Noise Voltage Density

PNP Gain-Bandwidth Product

= 10 V, I

= 1 mA

= 10 V, I

= 1 mA, 1 kHz

= 1 mA, V

= 10 V

—

Min

Typ

Max

Units

0.75

325

—

MHz

PNP

(THAT320: V

BE1

-V

BE2;

BE3

-V

BE4

) (THAT340: V

BE3

-V

BE4

)

= 1 mA

= 10

PNP

(THAT320: I

-I

B2;

-I

) (THAT340: I

-I

)

= 1 mA

= 10

PNP Collector-Base

Leakage Current

PNP Bulk Resistance

PNP Base Spreading Resistance

PNP Collector Saturation Voltage

PNP Output Capacitance

—

±700

±7

±1800

—

±0.5

±3

CBO

CE(SAT)

= 25 V

= 0 V, 10mA < I

< 10 mA

= 10 V, I

= 1 mA

= 1 mA, I

= 100

= 10 V, I

= 0 mA, 100 kHz

—

–25

–0.05

—

PNP Collector-Collector Capacitance (THAT320: Q1-Q2; Q3-Q4) (THAT340: Q3-Q4)

= 0 V, 100 kHz

0.6

Information furnished by THAT Corporation is believed to be accurate and reliable. However no responsibility is as-

sumed by THAT Corporation for it’s use nor for any infringements of patents or other rights of third parties which may

result from it’s use.

LIFE SUPPORT POLICY

THAT Corporation products are not designed for use in life support equipment where malfunction of such products

can reasonably be expected to result in personal injury or death. The buyer uses or sells such products for life suport

application at the buyer’s own risk and agrees to hold harmless THAT Corporation from all damages, claims, suits or

expense resulting from such use.

CAUTION: THIS IS AN ESD (ELECTROSTATIC DISCHARGE) SENSITIVE DEVICE.

It can be damaged by the currents generated by electrostatic discharge. Static charge and therefore dangerous volt-

ages can accumulate and discharge without detection causing a loss of function or performance to occur.

The transistors in this device are unprotected in order to maximize performance and flexibility. They are more sen-

sitive to ESD damage than many other ICs which include protection devices at their inputs. Note that all of the pins

(not just the "inputs") are susceptible.

Use ESD preventative measures when storing and handling this device. Unused devices should be stored in conduc-

tive packaging. Packaging should be discharged to the destination socket before the devices are removed. ESD damage

can occur to these devices even after they are installed in a board-level assembly. Circuits should include specific and

appropriate ESD protection.

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

600041 Rev B

Page 5

0.750±0.004

(19.05±0.10)

0.050

(1.27)

Typ

0.25±.004

(6.35±0.10)

0.060

(1.52)

Typ.

0.30 ±0.02

(7.62 ±0.5)

0.125±0.004

(3.18±0.10)

0.157 0.245

(3.99) (6.2)

Max Max

0.018 (0.46)

Max

0.344 (8.74)

Max

0.069

(1.75)

Max

0.018

(0.46)

0.10 Typ.

(2.54)

0.075

(1.91)

0.010

(0.25)

0.010

(0.25)

Max

Note:

JA = 100 °C / W

Note:

JA = 100 °C / W

Figure 5. Dual-In-Line Package Outline

Figure 6. Surface-Mount Package Outline

1613u

-477.5

-286.5

-411.5

286.5

THAT

312

477.5

411.5

-95.5

95.5

668.5

477.5

286.5

17C1

18B

95.5

-95.5

-286.5

-477.5

-668.5

90u

Figure 7. Die dimensions

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

GKH YK

1232u