THGBMHG6C1LBAIL
TOSHIBA e-MMC Module
8GB THGBMHG6C1LBAIL
INTRODUCTION
THGBMHG6C1LBAIL is 8GB density of e-MMC Module product housed in 153 ball BGA package. This unit is utilized
advanced TOSHIBA NAND flash device(s) and controller chip assembled as Multi Chip Module. THGBMHG6C1LBAIL
has an industry standard MMC protocol for easy use.
FEATURES
THGBMHG6C1LBAIL Interface
THGBMHG6C1LBAIL has the JEDEC/MMCA Version 5.1 interface with 1-I/O, 4-I/O and 8-I/O mode.
Pin Connection
P-WFBGA153-1113-0.50 (11.5mm x 13mm, H0.8mm max. package)
14
13
12
11
10
9
8
7
6
5
4
3
2
1
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
RFU
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
VccQ
VSF VSF RFU
Vss
VSF
RFU
Vcc
RFU
Vcc
Vss
RFU
NC
NC
NC
NC
CLK
NC
NC
NC
NC
NC
NC
NC
RFU
VssQ
Top View
Vss
Vcc
RFU
Vcc
RFU
NC
Vss
DAT2
DAT7
RFU
DAT6
NC
VssQ
Vss
DS
Vss
RST_n
CMD
VssQ VccQ
VccQ
VccQ
VssQ
DAT1
DAT5
NC
index
DAT0
DAT4
NC
NC
NC
NC
D
NC
NC
NC
E
NC
NC
NC
F
RFU
NC
NC
NC
NC
J
NC
NC
NC
K
NC
NC
NC
L
NC
NC
NC
M
NC
VssQ
VccQ
NC
NC
A
DAT3 VDDi
NC
NC
G
NC
NC
H
NC
NC
P
NC
B
NC
C
NC
N
Pin Number
A3
A4
A5
A6
B2
B3
B4
B5
B6
Name
DAT0
DAT1
DAT2
Vss
DAT3
DAT4
DAT5
DAT6
DAT7
Pin Number
C2
C4
C6
E6
E7
F5
G5
H5
H10
Name
VDDi
VssQ
VccQ
Vcc
Vss
Vcc
Vss
DS
Vss
Pin Number
J5
J10
K5
K8
K9
M4
M5
M6
N2
Name
Vss
Vcc
RST_n
Vss
Vcc
VccQ
CMD
CLK
VssQ
Pin Number
N4
N5
P3
P4
P5
P6
Name
VccQ
VssQ
VccQ
VssQ
VccQ
VssQ
NC: No Connect, shall be connected to ground or left floating.
RFU: Reserved for Future Use, shall be left floating for future use.
VSF: Vendor Specific Function, shall be left floating.
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THGBMHG6C1LBAIL
Part Numbers
Available e-MMC Module Products – Part Numbers
TOSHIBA Part Number
THGBMHG6C1LBAIL
Density
8GB
Package Size
11.5mm x 13mm x 0.8mm(max)
NAND Flash Type
1 x 64Gbit 15nm
Weight
0.17g typ.
Operating Temperature and Humidity Conditions
-25°C to +85°C, and 0%RH to 95%RH non-condensing
Storage Temperature and Humidity Conditions
-40°C to +85°C, and 0%RH to 95%RH non-condensing
Performance
X8 mode/ Sequential access
Interleave
Operation
Frequency
/Mode
Typ. Performance
[MB/sec]
VccQ
Read
1.8V
3.3V
THGBMHG6C1LBAIL
8GB
1 x 64Gbit 15nm
Non
Interleave
52MHz/DDR
HS200
HS400
1.8V
3.3V
1.8V
1.8V
45
45
90
90
180
215
Write
35
35
35
35
35
35
TOSHIBA Part Number
Density
NAND Flash Type
52MHz/SDR
Power Supply
Vcc =
VccQ =
2.7V to 3.6V
1.7V to 1.95V / 2.7V to 3.6V
Operating Current
(RMS)
The measurement for max RMS current is done as average RMS current consumption over a period of 100ms
Max Operating
Current [mA]
Iccq
52MHz/SDR
THGBMHG6C1LBAIL
8GB
1 x 64Gbit 15nm
Non
Interleave
52MHz/DDR
HS200
HS400
1.8V
3.3V
1.8V
3.3V
1.8V
1.8V
95
110
120
140
175
220
Icc
40
40
40
40
40
40
TOSHIBA Part
Number
Density
NAND Flash Type
Interleave
Operation
Frequency
/Mode
VccQ
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Jul. 31th, 2015
THGBMHG6C1LBAIL
Sleep Mode Current
TOSHIBA Part Number
Density
NAND Flash Type
Interleave
Operation
Non
Interleave
Iccqs [μA]
Typ. *1
100
Max. *2
510
Iccqs+Iccs [μA]
Typ. *1
120
Max. *2
585
THGBMHG6C1LBAIL
8GB
1 x 64Gbit 15nm
*1 : The conditions of typical values are 25°C and VccQ = 3.3V or 1.8V.
*2 : The conditions of maximum values are 85°C and VccQ = 3.6V or 1.95V.
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THGBMHG6C1LBAIL
Product Architecture
The diagram in Figure 1 illustrates the main functional blocks of the THGBMHG6C1LBAIL.
Specification of the C
REG
and recommended values of the C
VCC
, and C
VCCQ
in the Figure 1 are as follows.
Parameter
Symbol
Unit
μF
V
DDi
capacitor value
V
CC
capacitor value
V
CCQ
capacitor value
C
REG
C
VCC
C
VCCQ
μF
μF
μF
Min.
0.10
1.00
-
-
Typ.
-
-
2.2 + 0.1
2.2 + 0.1
Max.
2.2*
2.2*
-
-
Remark
Except HS400
HS400
* Toshiba recommends that the value should be usually applied as the value of C
REG
.
Package
Vcc(3.3V)
VccQ(1.8V/3.3V)
VDDi
C
VCC
C
VCCQ
MMC I/O BLOCK
REGULATOR
NAND
Control signal
NAND I/O BLOCK
C
REG
x11
I/O BLOCK
CORE LOGIC
NAND
NAND I/O
MMC I/F(1.8V/3.3V)
Figure 1
THGBMHG6C1LBAIL Block Diagram
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Jul. 31th, 2015
THGBMHG6C1LBAIL
PRODUCT SPECIFICATIONS
Package Dimensions
P-WFBGA153-1113-0.50 (11.5mm x 13mm, H0.8mm max. package)
Unit: mm
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Jul. 31th, 2015
