TIL194, TIL195, TIL196, TIL194X, TIL195X, TIL196X
TIL194A, TIL195A,TIL196A, TIL194AX, TIL195AX,TIL196AX
TIL194B, TIL195B, TIL196B, TIL194BX, TIL195BX, TIL196BX
HIGH DENSITY A.C. INPUT
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead form:
- STD
- G form
-
SMD approved to CECC 00802
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TIL194X/AX/BX Certified to EN60950 by the
following Test Bodies :-
Nemko - Certificate No. P01102465
Fimko - Certificate No. FI18162
Semko - Reference No. 0202041/01-25
Demko - Certificate No. 311161-01
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TIL194X/AX/BX : BSI approved
- Certificate No. 8001
DESCRIPTION
The TIL194, TIL195, TIL196 series of optically
coupled isolators consist of two infrared light
emitting diodes connected in inverse parallel and
NPN silicon photo transistors in space efficient
dual in line plastic packages.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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AC or polarity insensitive input
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Telephone sets, Telephone exchangers
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Signal transmission between systems of
different potentials and impedances
SURFACE MOUNT
TIL194
TIL194A
TIL194B
2.54
7.0
6.0
1
2
Dimensions in mm
4
3
1.2
5.08
4.08
7.62
4.0
3.0
0.5
13°
Max
0.26
0.5
2.54
1
7.0
6.0
1.2
10.16
9.16
4.0
3.0
0.5
3.0
0.5
3.35
1
2
3
4
5
7.0
6.0 6
7
8
20.32
19.32
4.0
3.0
0.5
3.0
0.5 3.35
0.26
7.62
0.26
16
15
14
13
12
11
10
9
13°
Max
2
3
4
7.62
8
7
6
5
3.35
TIL195
TIL195A
TIL195B
3.0
TIL196
TIL196A
TIL196B
2.54
OPTION SM
OPTION G
7.62
1.2
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
13°
Max
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
14/5/03
DB92398m-AAS/A6
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Power Dissipation
± 50mA
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
MIN TYP MAX UNITS
1.2
1.4
V
TEST CONDITION
I
F
= ± 20mA
35V
6V
150mW
Output
Collector-emitter Breakdown (BV
CEO
)
( Note 2 )
35
6
100
V
V
nA
I
C
= 0.5mA
I
E
= 100
µ
A
V
CE
= 20V
± 5mAI
F
, 5V V
CE
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Coupled
Current Transfer Ratio (CTR) (Note 2)
TIL194, TIL195, TIL196
TIL194A, TIL195A, TIL196A
TIL194B, TIL195B, TIL196B
Collector-Emitter Saturation Voltage
V
CE (SAT)
Input to Output Isolation Voltage V
ISO
20
50
100
0.4
5300
7500
%
%
%
V
V
RMS
V
PK
Ω
± 5mAI
F
, 1mAI
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CE
= 2V ,
I
C
= 2mA, R
L
= 100
Ω
Input-output Isolation Resistance R
ISO
5x10
10
Response Time (Rise), tr
Response Time (Fall), tf
4
3
µ
s
µ
s
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
14/5/03
DB92398m-AAS/A6
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
25
Collector current I
C
(mA)
150
20
15
10
5
0
-30
0
25
50
75
100
125
0
Collector Current vs. Low
Collector-emitter Voltage
T
A
= 25°C
±50
±40
±30
±20
±10
100
50
±5
I
F
= ±2mA
0
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
0.2
0.4
0.6
0.8
1.0
Collector-emitter voltage V
CE
( V )
Collector Current vs. Collector-emitter Voltage
50
T
A
= 25°C
±50
±30
±20
±15
20
10
0
±10
I
F
= ±5mA
Forward current I
F
(±mA)
50
Collector current I
C
(mA)
-30
0
25
50
75
100
125
40
30
40
30
20
10
0
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
I
F
= ±5mA
I
C
= 1mA
Current transfer ratio CTR (%)
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Current Transfer Ratio vs. Forward Current
320
280
240
200
160
120
80
40
0
1
2
5
10
20
50
Forward current I
F
(±mA)
DB92398m-AAS/A6
Collector-emitter saturation voltage V
CE(SAT)
(V)
V
CE
= 5V
T
A
= 25°C
14/5/03
模拟电子
