TISP3240F3, TISP3260F3, TISP3290F3, TISP3320F3, TISP3380F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
Copyright © 1997, Power Innovations Limited, UK
MARCH 1994 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘3240F3
‘3260F3
‘3290F3
‘3320F3
‘3380F3
V
DRM
V
180
200
220
240
270
V
(BO)
V
240
260
290
320
380
D PACKAGE
(TOP VIEW)
T
NC
NC
R
1
2
3
4
8
7
6
5
G
G
G
G
MDXXAE
NC - No internal connection
P PACKAGE
(TOP VIEW)
q
Planar Passivated Junctions
Low Off-State Current < 10 µA
Rated for International Surge Wave Shapes
WAVE SHAPE
2/10 µs
8/20 µs
10/160 µs
10/560 µs
0.5/700 µs
10/700 µs
10/1000 µs
STANDARD
FCC Part 68
ANSI C62.41
FCC Part 68
FCC Part 68
RLM 88
FTZ R12
VDE 0433
CCITT IX K17/K20
REA PE-60
I
TSP
A
175
120
60
45
38
50
50
50
35
T
G
G
R
1
2
3
4
8
7
6
5
T
G
G
R
MDXXAF
q
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
SL PACKAGE
(TOP VIEW)
T
G
R
1
2
3
MDXXAG
MD23AA
q
Surface Mount and Through-Hole Options
PACKAGE
Small-outline
Small-outline taped
and reeled
Plastic DIP
Single-in-line
PART # SUFFIX
D
DR
P
SL
device symbol
T
R
q
UL Recognized, E132482
SD3XAA
description
These high voltage dual symmetrical transient
voltage suppressor devices are designed to
protect telecommunication applications with
ground backed ringing against transients caused
by lightning strikes and a.c. power lines. Offered
in five voltage variants to meet battery and
protection requirements they are guaranteed to
suppress and withstand the listed international
lightning surges in both polarities. Transients are
initially clipped by breakdown clamping until the
voltage rises to the breakover level, which
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
causes the device to crowbar. The high crowbar
holding current prevents d.c. latchup as the
current subsides.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TISP3240F3, TISP3260F3, TISP3290F3, TISP3320F3, TISP3380F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
description (Continued)
ensure precise and matched breakover control and are virtually transparent to the system in normal operation
The small-outline 8 pin assignment has been carefully chosen for the TISP series to maximise the inter-pin
clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand
ratings.
absolute maximum ratings
RATING
‘3240F3
‘3260F3
Repetitive peak off-state voltage (0°C < T
J
< 70°C)
‘3290F3
‘3320F3
‘3380F3
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs)
2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs)
8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)
10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs)
5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)
0.5/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)
5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs)
5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs)
10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs)
10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs)
Non-repetitive peak on-state current (see Notes 2 and 3)
50 Hz,
1s
D Package
P Package
SL Package
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
Linear current ramp, Maximum ramp value < 38 A
di
F
/dt
T
J
T
stg
I
TSM
I
TSP
350
175
120
60
50
38
50
50
45
35
4
6
6
250
-40 to +150
-40 to +150
A/µs
°C
°C
A rms
A
V
DRM
SYMBOL
VALUE
± 180
± 200
± 220
± 240
± 270
V
UNIT
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP must be in thermal equilibrium with 0°C < T
J
<70°C. The surge may be repeated after the TISP returns to its initial
conditions.
3. Above 70°C, derate linearly to zero at 150°C lead temperature.
electrical characteristics for the T and R terminals, T
J
= 25°C
PARAMETER
I
DRM
I
D
C
off
Repetitive peak off-
state current
Off-state current
TEST CONDITIONS
V
D
= ±2V
DRM
, 0°C < T
J
< 70°C
V
D
= ±50 V
f = 100 kHz, V
d
= 100 mV
Off-state capacitance
V
D
= 0, (see Notes 4 and 5)
Third terminal = -50 to +50 V
D Package
P Package
SL Package
50†
65†
30†
TISP3240F3
MIN
MAX
±10
±10
150
200
100
50†
65†
30†
TISP3260F3
MIN
MAX
±10
±10
150
200
100
50†
65†
30†
TISP3290F3
MIN
MAX
±10
±10
150
200
100
fF
UNIT
µA
µA
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
† Typical value of the parameter, not a limit value.
PRODUCT
INFORMATION
2
TISP3240F3, TISP3260F3, TISP3290F3, TISP3320F3, TISP3380F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
electrical characteristics for the T and G or the R and G terminals, T
J
= 25°C
PARAMETER
I
DRM
V
(BO)
V
(BO)
I
(BO)
V
T
I
H
dv/dt
I
D
C
off
Repetitive peak off-
state current
Breakover voltage
TEST CONDITIONS
V
D
= ±V
DRM
, 0°C < T
J
< 70°C
dv/dt = ±250 V/ms,
Source Resistance = 300
Ω
di/dt < 20 A/µs
±267†
±287†
±317†
V
Source Resistance = 50
Ω
dv/dt = ±250 V/ms,
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Off-state capacitance
Source Resistance = 300
Ω
I
T
= ±5 A, t
W
= 100 µs
di/dt = -/+30 mA/ms
Linear voltage ramp,
±5
Maximum ramp value < 0.85V
(BR)MIN
V
D
= ±50 V
f = 100 kHz,
V
d
= 100 mV
V
D
= 0,
V
D
= -50 V
57†
26†
11†
Third terminal = -50 to +50 V V
D
= -5 V
(see Notes 6 and 7)
±10
95
45
20
57†
26†
11†
±10
95
45
20
57†
26†
11†
±10
95
45
20
µA
pF
pF
pF
±5
±5
kV/µs
±0.15
±0.15
±0.6
±3
±0.15
±0.15
±0.6
±3
±0.15
±0.15
±0.6
±3
A
V
A
±240
±260
±290
V
TISP3240F3
MIN
MAX
±10
TISP3260F3
MIN
MAX
±10
TISP3290F3
MIN
MAX
±10
UNIT
µA
Impulse breakover volt- dv/dt = ±1000 V/µs,
age
NOTES: 6 These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
7. Further details on capacitance are given in the Applications Information section
† Typical value of the parameter, not a limit value.
electrical characteristics for the T and R terminals, T
J
= 25°C
PARAMETER
I
DRM
I
D
C
off
Repetitive peak off-
state current
Off-state current
TEST CONDITIONS
V
D
= ±V
DRM
, 0°C < T
J
< 70°C
V
D
= ±50 V
f = 100 kHz,
Off-state capacitance
V
d
= 100 mV
D Package
P Package
SL Package
50†
65†
30†
V
D
= 0, (see Notes 4 and 5)
Third terminal = -50 to +50 V
TISP3320F3
MIN
MAX
±10
±10
150
200
100
50†
65†
30†
TISP3380F3
MIN
MAX
±10
±10
150
200
100
fF
UNIT
µA
µA
NOTES: 4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
5. Further details on capacitance are given in the Applications Information section.
electrical characteristics for the T and G or the R and G terminals, T
J
= 25°C
PARAMETER
I
DRM
V
(BO)
V
(BO)
Repetitive peak off-
state current
Breakover voltage
TEST CONDITIONS
V
D
= ±V
DRM
, 0°C < T
J
< 70°C
dv/dt = ±250 V/ms,
Source Resistance = 300
Ω
di/dt < 20 A/µs
±347†
±407†
V
Source Resistance = 50
Ω
±320
±380
V
TISP3320F3
MIN
MAX
±10
TISP3380F3
MIN
MAX
±10
UNIT
µA
Impulse breakover volt- dv/dt = ±1000 V/µs,
age
PRODUCT
INFORMATION
3
TISP3240F3, TISP3260F3, TISP3290F3, TISP3320F3, TISP3380F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
electrical characteristics for the T and G or the R and G terminals, T
J
= 25°C (Continued)
PARAMETER
dv/dt = ±250 V/ms,
I
(BO)
V
T
I
H
dv/dt
I
D
C
off
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Off-state capacitance
Source Resistance = 300
Ω
I
T
= ±5 A,
t
W
= 100 µs
±0.15
±5
Maximum ramp value < 0.85V
(BR)MIN
V
D
= ±50 V
f = 100 kHz, V
d
= 100 mV
Third voltage = -50 to +50 V
(see Notes 6 and 7)
V
D
= 0,
V
D
= -5 V
V
D
= -50 V
57†
26†
11†
±10
95
45
20
57†
26†
11†
±10
95
45
20
µA
pF
pF
pF
di/dt = -/+30 mA/ms
Linear voltage ramp,
±5
kV/µs
±0.15
±0.6
±3
±0.15
±0.15
±0.6
±3
A
V
A
TEST CONDITIONS
TISP3320F3
MIN
MAX
TISP3380F3
MIN
MAX
UNIT
NOTES: 6 These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
7. Further details on capacitance are given in the Applications Information section.
† Typical value of the parameter, not a limit value.
PARAMETER MEASUREMENT INFORMATION
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
I
T
V
T
I
H
V
(BR)M
-v
I
(BR)
V
(BR)
I
(BO)
I
H
V
DRM
I
DRM
V
D
I
D
I
D
V
D
V
DRM
V
(BR)M
I
DRM
V
(BR)
I
(BR)
+v
V
(BO)
I
(BO)
V
(BO)
V
T
I
T
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAA
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR ANY PAIR OF TERMINALS
PRODUCT
INFORMATION
4
TISP3240F3, TISP3260F3, TISP3290F3, TISP3320F3, TISP3380F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
thermal characteristics
PARAMETER
D Package
R
θ
JA
Junction to free air thermal resistance
P Package
SL Package
MIN
TYP
MAX
160
100
105
°C/W
UNIT
PRODUCT
INFORMATION
5
