*R
oH
S
TISP4015L1AJ, TISP4030L1AJ, TISP4040L1AJ
TISP4015L1BJ, TISP4030L1BJ, TISP4040L1BJ
VERY LOW VOLTAGE
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
CO
M
PL
IA
NT
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Low Capacitance
‘4015 ................................................................................... 28 pF
‘4030 ................................................................................... 27 pF
‘4040 ................................................................................... 23 pF
Digital Line Signal Level Protection
- ISDN
- xDSL
Safety Extra Low Voltage, SELV, values
SMA Package (Top View)
R (B)
1
2
T (A)
MDXXCCE
Device
‘4015
‘4030
‘4040
V
DRM
V
±
8
±
15
±
25
V
(BO)
V
±
15
±
30
±
40
SMB Package (Top View)
R(B)
1
2
T(A)
30 A “L” Series specified for:
- ITU-T recommendations K.20, K.45, K.21
- FCC Part 68 and GR-1089-CORE
MDXXBGF
Device Symbol
T
Wave Shape
2/10
µs
8/20
µs
10/160
µs
10/700
µs
10/560
µs
10/1000
µs
Standard
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K.20/45/21
FCC Part 68
FCC Part 68
GR-1089-CORE
I
TSP
A
150
120
65
SD4XAA
45
35
30
R
T
erminals T and R correspond to the
alternative line designators of A and B
Available in SMA and SMB Packages
SMA Saves 25 % Placement Area Over SMB
............................................ UL Recognized Components
Description
These devices are designed to limit overvoltages on digital telecommunication lines. Overvoltages are normally caused by a.c. power system
or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is
typically used for the protection of transformer windings and low voltage electronics.
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state condition. This low-voltage on state
causes the current resulting from the overvoltage to be safely diverted through the device. The device switches off when the diverted current
falls below the holding current value.
How To Order
Device
TISP40xxL1
Package
Carrier
Order As
TISP40xxL1AJR-S
TISP40xxL1BJR-S
SMA/ DO-214AC J- Bend (AJ) Embo ssed Tape Reeled
(R)
SMB / DO-214AA J- Bend (BJ)
Insert xx value cor respond ing to p rotection volt ages of 15 V, 30 V and 40 V.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
AUGUST 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
2/10
µs
(T
elcordia GR-1089-CORE, 2/10
µs
voltage wave shape)
8/20
µs
(IEC 61000-4-5, comb ination wave generator, 1.2/50 voltage, 8/20 current)
10/160
µs
(FCC Part 68, 10/160
µs
voltage wave shape)
5/310
µs
(ITU-T K.20/45/21, 10/700
µs
voltage wave shape)
5/320
µs
(FCC Part 68, 9/720
µs
voltage wave shape)
10/560
µs
(FCC Part 68, 10/560
µs
voltage wave shape)
10/1000
µs
(T
elcordia GR-1089-CORE, 10/1000
µs
voltage wave shape)
Non-repetitive peak on-state current (see Notes 1 and 2)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
0.2 s 50 Hz/60 Hz a.c.
2 s 50 Hz/60 Hz a.c.
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of current (2/10 waveshape)
Maximum junction temperature
Storage temperature range
NOTES: 1. Initially, the device must be in thermal equilibrium with T
J
= 25
°C.
2. The surge may be repeated after the device returns to its initial conditions.
20
22
13
5
1.8
130
150
-65 to +150
±
150
±
120
±
65
±
45
±
45
±
35
±
30
‘4015
‘4030
‘4040
Symbol
V
DRM
Value
±8
±15
±
25
Unit
V
I
TSP
A
I
TSM
A
di/d t
T
JM
T
stg
A/µs
°C
°C
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted)
Parameter
I
DRM
Repetitive peak off-
state current
Breakover voltage
V
D
= V
DRM
‘4015
‘4030
‘4040
‘4015
‘4030
‘4040
Test Conditions
Min
Typ
Max
±5
±15
±30
±40
±34
±50
±63
±0.8
‘4015
‘4030
‘4040
±50
±2
Unit
µA
V
(BO)
di/dt =
±0.8
A/ms
dv/dt
=
±1000
V/µs, Linear voltage ramp,
Maximum ramp value =
±500
V
di/dt =
±5
A/µs, Linear current ramp,
Maximum ramp value =
±10
A
di/dt =
±0.8
A/ms
V
D
=
±
6 V
V
D
=
±
13 V
V
D
=
±
22 V
I
T
=
±5
A, di/dt = +/-30 mA/ms
V
V
(BO)
Impulse breakover
voltage
Breakover current
Off-state current
Holding current
V
I
(BO)
I
D
I
H
A
µA
mA
AUGUST 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted) (Continued)
Parameter
Test Conditions
f = 1 MHz, V
d
= 1 V rms, V
D
= 0
‘4015
‘4030
‘4040
‘4015
‘4030
‘4040
‘4015
‘4030
‘4040
Min
Typ
28
27
23
25
24
20
23
22
18
Max
36
35
29
33
31
26
30
29
24
Unit
f = 1 MHz, V
d
= 1 V rms, V
D
= 1 V
C
off
Off-state capacitance
f = 1 MHz, V
d
= 1 V rms, V
D
= 2 V
pF
Thermal Characteristics
Parameter
Test Conditions
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
T
A
= 25
°C,
(see Note 3)
SMA
SMB
60
55
Min
Typ
Max
125
120
Unit
R
θ
JA
Junctio n to free air thermal resistance
265 mm x 210 mm populated line card, SMA
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25
°C
SMB
°C/W
NOTE 3: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
AUGUST 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Parameter Measurement Information
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
V
(BO)
I
H
I
DRM
-v
V
DRM
I
DRM
V
D
I
D
I
D
V
D
V
DRM
+v
I
(BO)
I
(BO)
I
H
V
(BO)
I
TSM
I
Quadrant III
Switching
Characteristic
I
TSP
-i
PM4AC
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
AUGUST 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP40xxL1AJ/BJ VLV Overvoltage Protectors
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
10000
TC4LVC
1.10
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TC4LVE
'4040L1
1000
I
D
– Off-State Current - nA
Normalized Breakover Voltage
1.05
'4030L1
100
10
'4030L1
'4040L1
1
'4015L1
0.1
0
50
100
T
A
– Ambient Temperature –
°C
150
'4015L1
1.00
0.95
-25
0
25
50
75
100
125
T
J
- Junction Temperature -
°C
150
Figure 2.
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
70
50
30
20
10
7
5
3
2
1
0.7
0.5
0.3
0.2
0.1
1
2
3
4
V
T
– On-State Voltage – V
5
6
Normalized Holding Current
I
T
– On-State Current – A
TC4LVB
Figure 3.
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TC4LVD
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-25
0
25
50
75
100
T
J
- Junction Temperature -
°C
125
150
Figure 4.
AUGUST 1999 - REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Figure 5.
