TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 1999, Power Innovations Limited, UK
NOVEMBER 1997 - REVISED APRIL 1999
TELECOMMUNICATION SYSTEM HIGH CURRENT OVERVOLTAGE PROTECTORS
q
q
8 kV 10/700, 200 A 5/310 ITU-T K20/21 rating
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4300
‘4350
‘4400
V
DRM
V
58
65
75
100
120
135
145
160
180
200
230
275
300
V
(BO)
V
70
80
95
125
145
165
180
220
240
260
300
350
400
LM PACKAGE
(TOP VIEW)
T(A)
NC
R(B)
1
2
3
MD4XAT
NC - No internal connection on pin 2
LMF PACKAGE
(LM PACKAGE WITH FORMED LEADS)
(TOP VIEW)
T(A)
NC
R(B)
1
2
3
MD4XAKB
NC - No internal connection on pin 2
device symbol
T
q
Rated for International Surge Wave Shapes
WAVE SHAPE
2/10 µs
8/20 µs
10/160 µs
10/700 µs
10/560 µs
10/1000 µs
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
FCC Part 68
GR-1089-CORE
I
TSP
A
500
300
250
200
160
100
R
SD4XAA
Terminals T and R correspond to the
alternative line designators of A and B
q
Ordering Information
DEVICE TYPE
PACKAGE TYPE
Straight Lead DO-92 Bulk Pack
Straight Lead DO-92 Tape and Reeled
Formed Lead DO-92 Tape and Reeled
q
Low Differential Capacitance . . . 80 pF max.
TISP4xxxH3LM
TISP4xxxH3LMR
TISP4xxxH3LMFR
description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by
a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A
single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication
equipment (e.g. between the Ring to Tip wires for telephones and modems). Combinations of devices can be
used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides.
PRODUCT
INFORMATION
1
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED APRIL 1999
description (continued)
This TISP4xxxH3LM range consists of thirteen voltage variants to meet various maximum system voltage
levels (58 V to 300 V). They are guaranteed to voltage limit and withstand the listed international lightning
surges in both polarities. These protection devices are supplied in a DO-92 (LM) cylindrical plastic package.
The TISP4xxxH3LM is a straight lead DO-92 supplied in bulk pack and on tape and reeled. The
TISP4xxxH3LMF is a formed lead DO-92 supplied only on tape and reeled.
absolute maximum ratings, T
A
= 25°C (unless otherwise noted)
RATING
‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
Repetitive peak off-state voltage, (see Note 1)
‘4180
‘4220
‘4240
‘4260
‘4300
‘4350
‘4400
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
0.2/310 µs (I 31-24, 0.5/700 µs voltage wave shape)
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape)
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
5/320 µs (FCC Part 68, 9/720 µs voltage wave shape)
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
NOTES: 1.
2.
3.
4.
5.
Exponential current ramp, Maximum ramp value < 100 A
di
T
/dt
T
J
T
stg
I
TSM
55
60
2.3
400
-40 to +150
-65 to +150
A/µs
°C
°C
A
I
TSP
500
300
250
220
200
200
200
200
160
100
A
V
DRM
SYMBOL
VALUE
± 58
± 65
± 75
±100
±120
±135
±145
±160
±180
±200
±230
±275
±300
V
UNIT
See Applications Information and Figure 10 for voltage values at lower temperatures.
Initially the TISP4xxxH3LM must be in thermal equilibrium with T
J
= 25°C.
The surge may be repeated after the TISP4xxxH3LM returns to its initial conditions.
See Applications Information and Figure 11 for current ratings at other temperatures.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures
above 25 °C
PRODUCT
2
INFORMATION
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED APRIL 1999
electrical characteristics for the T and R terminals, T
A
= 25°C (unless otherwise noted)
PARAMETER
I
DRM
Repetitive peak off-
state current
V
D
= ±V
DRM
TEST CONDITIONS
T
A
= 25°C
T
A
= 85°C
‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
V
(BO)
Breakover voltage
dv/dt = ±750 V/ms,
R
SOURCE
= 300
Ω
‘4180
‘4220
‘4240
‘4260
‘4300
‘4350
‘4400
‘4070
‘4080
‘4095
‘4125
dv/dt
≤
±1000 V/µs, Linear voltage ramp,
V
(BO)
Impulse breakover
voltage
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4300
‘4350
‘4400
I
(BO)
V
T
I
H
dv/dt
I
D
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ±750 V/ms,
R
SOURCE
= 300
Ω
±0.15
±0.15
±5
T
A
= 85°C
V
d
= 1 V rms, V
D
= 0,
‘4070 thru ‘4095
‘4125 thru ‘4220
‘4240 thru ‘4400
f = 100 kHz,
V
d
= 1 V rms, V
D
= -1 V
‘4070 thru ‘4095
‘4125 thru ‘4220
‘4240 thru ‘4400
C
off
Off-state capacitance
f = 100 kHz,
V
d
= 1 V rms, V
D
= -2 V
‘4070 thru ‘4095
‘4125 thru ‘4220
‘4240 thru ‘4400
f = 100 kHz,
V
d
= 1 V rms, V
D
= -50 V
‘4070 thru ‘4095
‘4125 thru ‘4220
‘4240 thru ‘4400
f = 100 kHz,
(see Note 6)
NOTE
6: To avoid possible voltage clipping, the ‘4125 is tested with V
D
= -98 V.
V
d
= 1 V rms, V
D
= -100 V
‘4125 thru ‘4220
‘4240 thru ‘4400
172
95
92
157
85
80
145
78
72
70
33
28
25
22
±10
218
120
115
200
110
100
185
100
90
90
43
35
33
28
pF
I
T
= ±5 A, t
W
= 100 µs
I
T
= ±5 A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
= ±50 V
f = 100 kHz,
MIN
TYP
MAX
±5
±10
±70
±80
±95
±125
±145
±165
±180
±220
±240
±260
±300
±350
±400
±78
±88
±102
±132
±151
±171
±186
±227
±247
±267
±308
±359
±410
±0.6
±3
±0.6
A
V
A
kV/µs
µA
V
V
UNIT
µA
PRODUCT
INFORMATION
3
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED APRIL 1999
thermal characteristics
PARAMETER
TEST CONDITIONS
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
,
R
θJA
Junction to free air thermal resistance
T
A
= 25 °C, (see Note 7)
265 mm x 210 mm populated line card,
4-layer PCB, I
T
= I
TSM(1000)
, T
A
= 25 °C
NOTE
55
MIN
TYP
MAX
105
°C/W
UNIT
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
PARAMETER MEASUREMENT INFORMATION
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
I
T
V
T
I
H
V
(BO)
I
(BO)
-v
I
DRM
V
DRM
V
D
I
D
I
D
V
D
V
DRM
I
DRM
+v
I
(BO)
I
H
V
(BO)
V
T
I
T
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAAB
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
PRODUCT
4
INFORMATION
TISP4070H3LM THRU TISP4095H3LM, TISP4125H3LM THRU TISP4220H3LM,
TISP4240H3LM THRU TISP4400H3LM
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
NOVEMBER 1997 - REVISED APRIL 1999
TYPICAL CHARACTERISTICS
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
10
2
V
D
= ±50 V
10
1
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
-25
0
25
50
75
100
125
T
J
- Junction Temperature - °C
150
0.95
-25
0
25
50
75
100 125
T
J
- Junction Temperature - °C
150
Normalised Breakover Voltage
|I
D
| - Off-State Current - µA
TCHAS
1.10
NORMALISED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TC4HAF
1.05
1.00
Figure 2.
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
200
150
100
70
I
T
- On-State Current - A
50
40
30
20
15
10
7
5
4
3
2
1.5
1
0.7
'4125
THRU
'4200
T
A
= 25 °C
t
W
= 100 µs
Normalised Holding Current
Figure 3.
NORMALISED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TC4HAD
TC4HAC
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
'4240
THRU
'4400
1
'4070
THRU
'4095
1.5
2
3
4 5
V
T
- On-State Voltage - V
7
10
-25
0
25
50
75
100 125
T
J
- Junction Temperature - °C
150
Figure 4.
Figure 5.
PRODUCT
INFORMATION
5
stm32/stm8
