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TISP7320F3P

Silicon Surge Protector, PLASTIC, DIP-8

器件类别:模拟混合信号IC    触发装置   

厂商名称:Power Innovations Limited

厂商官网:http://www.power-innovations.com

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器件参数
参数名称
属性值
厂商名称
Power Innovations Limited
包装说明
IN-LINE, R-PDIP-T8
Reach Compliance Code
unknown
JESD-30 代码
R-PDIP-T8
端子数量
8
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
IN-LINE
认证状态
Not Qualified
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
DUAL
触发设备类型
SILICON SURGE PROTECTOR
文档预览
TISP7125F3, TISP7150F3, TISP7180F3, TISP7240F3, TISP7260F3,
TISP7290F3, TISP7320F3, TISP7350F3, TISP7380F3
TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 2000, Power Innovations Limited, UK
MARCH 1994 - REVISED MARCH 2000
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
G
Patented Ion-Implanted Breakdown Region
– Precise DC and Dynamic Voltages
DEVICE
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3†
V
DRM
V
100
120
145
180
200
220
240
275
270
V
(BO)
V
125
150
180
240
260
290
320
350
380
D PACKAGE
(TOP VIEW)
T
NC
NC
R
1
2
3
4
8
7
6
5
G
NU
NU
G
MDXXAL
P PACKAGE
(TOP VIEW)
T
NC
NC
R
1
2
3
4
8
7
6
5
G
NU
NU
G
MDXXAJA
† For new designs use ‘7350F3 instead of ‘7380F3
G
G
Planar Passivated Junctions
– Low Off-State Current ....................< 10 µA
Rated for International Surge Wave Shapes
– Single and Simultaneous Impulses
WAVE SHAPE
2/10
8/20
10/160
10/700
10/560
10/1000
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
FCC Part 68
ITU-T K.20/21
FCC Part 68
GR-1089-CORE
I
TSP
A
190
175
110
70
50
45
NC - No internal connection
NU - Nonusable; no external electrical connection
should be made to these pins.
Specified ratings require connection of pin 5 and
pin 8.
SL PACKAGE
(TOP VIEW)
T
G
R
1
2
3
MDXXAGA
MD7XAACA
device symbol
G
..................UL Recognized Component
T
R
description
The TISP7xxxF3 series are 3-point overvoltage
protectors designed for protecting against
metallic (differential mode) and simultaneous
longitudinal (common mode) surges. Each
terminal pair has the same voltage limiting
values and surge current capability. This terminal
pair surge capability ensures that the protector
can meet the simultaneous longitudinal surge
requirement which is typically twice the metallic
surge requirement.
AVAILABLE OPTIONS
DEVICE
TISP7xxxF3
TISP7xxxF3
TISP7xxxF3
PACKAGE
D, Small-outline
P, Plastic DIP
SL, Single-in-line
CARRIER
TAPE AND REEL
TUBE
TUBE
TUBE
ORDER #
TISP7xxxF3DR
TISP7xxxF3D
TISP7xxxF3P
TISP7xxxF3SL
SD7XAB
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TISP7125F3, TISP7150F3, TISP7180F3, TISP7240F3, TISP7260F3,
TISP7290F3, TISP7320F3, TISP7350F3, TISP7380F3
TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
MARCH 1994 - REVISED MARCH 2000
description (continued)
Each terminal pair has a symmetrical voltage-triggered thyristor characteristic. Overvoltages are initially
clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to
crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the
overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup
as the diverted current subsides.These protectors are guaranteed to voltage limit and withstand the listed
lightning surges in both polarities.
These medium and high voltage devices are offered in nine voltage variants to meet a range battery and
ringing voltage requirements. They are guaranteed to suppress and withstand the listed international lightning
surges on any terminal pair. Similar devices with working voltages of 58 V and 66 V are detailed in the
TISP7072F3, TISP7082F3 data sheet.
absolute maximum ratings, T
A
= 25 °C (unless otherwise noted)
RATING
Repetitive peak off-state voltage, 0 °C < T
A
< 70 °C
‘7125F3
‘7150F3
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25
resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current, 0 °C < T
A
< 70 °C (see Notes 1 and 3)
50 Hz,
1s
D Package
P Package
SL Package
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
Linear current ramp, Maximum ramp value < 38 A
di
T
/dt
T
J
T
stg
I
TSM
4.3
5.7
7.1
250
-65 to +150
-65 to +150
A/µs
°C
°C
A
I
PPSM
330
190
100
175
110
95
70
70
70
50
45
A
V
DRM
100
120
145
180
200
220
240
275
270
V
SYMBOL
VALUE
UNIT
NOTES: 1. Initially the TISP
®
must be in thermal equilibrium at the specified T
A
. The surge may be repeated after the TISP
®
returns to its
initial conditions. The rated current values may be applied singly either to the R to G or to the T to G or to the T to R terminals.
Additionally, both R to G and T to G may have their rated current values applied simultaneously (In this case the total G terminal
current will be twice the above rated current values).
2. See Thermal Information for derated I
PPSM
values 0 °C < T
A
< 70 °C and Applications Information for details on wave shapes.
3. Above 70 °C, derate I
TSM
linearly to zero at 150 °C lead temperature.
PRODUCT
INFORMATION
2
TISP7125F3, TISP7150F3, TISP7180F3, TISP7240F3, TISP7260F3,
TISP7290F3, TISP7320F3, TISP7350F3, TISP7380F3
TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
MARCH 1994 - REVISED MARCH 2000
electrical characteristics for all terminal pairs, T
A
= 25 °C (unless otherwise noted)
PARAMETER
I
DRM
Repetitive peak off-
state current
TEST CONDITIONS
V
D
= V
DRM
, 0 °C < T
A
< 70 °C
‘7125F3
‘7150F3
‘7180F3
‘7240F3
V
(BO)
Breakover voltage
dv/dt = ±250 V/ms, R
SOURCE
= 300
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
‘7125F3
‘7150F3
dv/dt
±1000 V/µs, Linear voltage ramp,
V
(BO)
Impulse breakover
voltage
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
‘7180F3
‘7240F3
‘7260F3
‘7290F3
‘7320F3
‘7350F3
‘7380F3
I
(BO)
V
T
I
H
dv/dt
I
D
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ±250 V/ms, R
SOURCE
= 300
I
T
= ±5 A, t
W
= 100 µs
I
T
= ±5 A, di/dt = +/-30 mA/ms
Linear voltage ramp, Maximum ramp value < 0.85V
DRM
V
D
= ±50 V
f = 1 MHz,
f = 1 MHz,
f = 1 MHz,
f = 1 MHz,
f = 1 MHz,
f = 1 MHz,
f = 1 MHz,
(see Note 4)
NOTE
V
d
= 1 V rms, V
D
= 0
V
d
= 1 V rms, V
D
= -1 V
V
d
= 1 V rms, V
D
= -2 V
V
d
= 1 V rms, V
D
= -5 V
V
d
= 1 V rms, V
D
= -50 V
V
d
= 1 V rms, V
D
= -100 V
V
d
= 1 V rms, V
DTR
= 0
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
C
off
Off-state capacitance
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
‘7125 thru ‘7180
‘7240 thru ‘7380
37
31
40
34
36
30
31
24
17
13
14
10
20
17
±0.15
±5
±10
48
41
52
44
47
39
40
31
23
17
18
13
27
23
pF
±0.1
MIN
TYP
MAX
±10
±125
±150
±180
±240
±260
±290
±320
±350
±380
±143
±168
±198
±269
±289
±319
±349
±379
±409
±0.8
±5
A
V
A
kV/µs
µA
V
V
UNIT
µA
4: Three-terminal guarded measurement, unmeasured terminal voltage bias is zero. First six capacitance values, with bias V
D
, are
for the R-G and T-G terminals only. The last capacitance value, with bias V
DTR
, is for the T-R terminals.
PRODUCT
INFORMATION
3
TISP7125F3, TISP7150F3, TISP7180F3, TISP7240F3, TISP7260F3,
TISP7290F3, TISP7320F3, TISP7350F3, TISP7380F3
TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
MARCH 1994 - REVISED MARCH 2000
thermal characteristics
PARAMETER
TEST CONDITIONS
P
tot
= 0.8 W, T
A
= 25°C
5 cm
2
, FR4 PCB
D Package
P Package
SL Package
MIN
TYP
MAX
160
100
135
°C/W
UNIT
R
θJA
Junction to free air thermal resistance
PARAMETER MEASUREMENT INFORMATION
+i
I
TSP
Quadrant I
Switching
Characteristic
I
TSM
V
(BO)
I
H
I
DRM
-v
V
DRM
I
DRM
I
H
V
D
I
D
I
D
V
D
V
DRM
+v
I
(BO)
I
(BO)
V
(BO)
I
TSM
Quadrant III
Switching
Characteristic
I
TSP
-i
PMXXAAA
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
T and G and R and G measurements are referenced to the G terminal
T and R measurements are referenced to the R terminal
PRODUCT
INFORMATION
4
TISP7125F3, TISP7150F3, TISP7180F3, TISP7240F3, TISP7260F3,
TISP7290F3, TISP7320F3, TISP7350F3, TISP7380F3
TRIPLE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
MARCH 1994 - REVISED MARCH 2000
TYPICAL CHARACTERISTICS
R and G, or T and G terminals
TISP7125F3 THRU TISP7180F3
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
TC7MAC
TISP7240F3 THRU TISP7380F3
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
TC7HAC
10
I
D
- Off-State Current - µA
I
D
- Off-State Current - µA
10
1
V
D
= 50 V
1
V
D
= 50 V
0·1
V
D
= -50 V
0·01
0·1
V
D
= -50 V
0·01
0·001
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
0·001
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
Figure 2.
Figure 3.
NORMALISED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC7MAE
NORMALISED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC7HAE
Normalised Breakdown Voltages
Normalised Breakdown Voltages
1.2
1.2
1.1
V
(BO)
1.1
V
(BO)
V
(BR)M
1.0
V
(BR)
Normalised to V
(BR)
I
(BR)
= 1 mA and 25°C
Positive Polarity
0.9
V
(BR)M
1.0
V
(BR)
Normalised to V
(BR)
I
(BR)
= 1 mA and 25°C
Positive Polarity
0.9
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
Figure 4.
Figure 5.
PRODUCT
INFORMATION
5
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