TK8P60W
MOSFETs
Silicon N-Channel MOS (DTMOS)
TK8P60W
1. Applications
•
Switching Voltage Regulators
2. Features
(1)
(2)
(3)
Low drain-source on-resistance: R
DS(ON)
= 0.42
Ω
(typ.)
by used to Super Junction Structure : DTMOS
Easy to control Gate switching
Enhancement mode: V
th
= 2.7 to 3.7 V (V
DS
= 10 V, I
D
= 0.4 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain (Heat Sink)
3: Source
DPAK
Start of commercial production
1
2012-09
2014-09-17
Rev.3.0
TK8P60W
4. Absolute Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
25
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
(Note 1)
(Note 1)
(T
c
= 25)
(Note 2)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
I
DR
I
DRP
T
ch
T
stg
Rating
600
±30
8.0
32
80
105
2.0
8.0
32
150
-55 to 150
W
mJ
A
A
Unit
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Symbol
R
th(ch-c)
Max
1.57
Unit
/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: V
DD
= 90 V, T
ch
= 25 (initial), L = 46.0 mH, R
G
= 25
Ω,
I
AR
= 2.0 A
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
2
2014-09-17
Rev.3.0
TK8P60W
6. Electrical Characteristics
6.1. Static Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
th
R
DS(ON)
Test Condition
V
GS
=
±30
V, V
DS
= 0 V
V
DS
= 600 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 0.4 mA
V
GS
= 10 V, I
D
= 4.0 A
Min
600
2.7
Typ.
0.42
Max
±1
10
3.7
0.5
Ω
V
Unit
µA
6.2. Dynamic Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
Symbol
C
iss
C
rss
C
oss
C
o(er)
r
g
t
r
t
on
t
f
t
off
dv/dt
V
DD
= 0 to 400 V, I
D
= 4.0 A
V
DS
= 0 to 400 V, V
GS
= 0 V
V
DS
= OPEN, f = 1 MHz
See Figure 6.2.1
Test Condition
V
DS
= 300 V, V
GS
= 0 V, f = 1 MHz
Min
50
Typ.
570
2.5
16
26
7.5
20
40
5.5
70
Max
V/ns
Ω
ns
Unit
pF
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (T
a
= 25
unless otherwise specified)
25
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
≈
400 V, V
GS
= 10 V, I
D
= 8.0 A
Min
Typ.
18.5
3.5
9.0
Max
Unit
nC
25
6.4. Source-Drain Characteristics (T
a
= 25
unless otherwise specified)
Characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Diode dv/dt ruggedness
Symbol
V
DSF
t
rr
Q
rr
I
rr
dv/dt
I
DR
= 4.0 A, V
GS
= 0 V, V
DD
= 400 V
Test Condition
I
DR
= 8.0 A, V
GS
= 0 V
I
DR
= 4.0 A, V
GS
= 0 V
-dI
DR
/dt = 100 A/µs
Min
15
Typ.
230
1.9
17
Max
-1.7
Unit
V
ns
µC
A
V/ns
3
2014-09-17
Rev.3.0
TK8P60W
7. Marking
Fig. 7.1 Marking
4
2014-09-17
Rev.3.0
TK8P60W
8. Characteristics Curves (Note)
Fig. 8.1 I
D
- V
DS
Fig. 8.2 I
D
- V
DS
Fig. 8.3 I
D
- V
GS
Fig. 8.4 V
DS
- V
GS
Fig. 8.5 V
DSS
- T
a
Fig. 8.6 R
DS(ON)
- I
D
5
2014-09-17
Rev.3.0
