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TLC220x, TLC220xA, TLC220xB, TLC220xY
Advanced LinCMOS LOW NOISE PRECISION
OPERATIONAL AMPLIFIERS
SLOS175B − FEBRUARY 1997 − REVISED JANUARY 2008
D
B Grade Is 100% Tested for Noise
D
D
D
30 nV/√Hz Max at f = 10 Hz
12 nV/√Hz Max at f = 1 kHz
Low Input Offset Voltage . . . 500
µV
Max
Excellent Offset Voltage Stability
With Temperature . . . 0.5
µV/°C
Typ
Rail-to-Rail Output Swing
D
Low Input Bias Current
D
D
1 pA Typ at T
A
= 25°C
Common-Mode Input Voltage Range
Includes the Negative Rail
Fully Specified For Both Single-Supply and
Split-Supply Operation
TYPICAL EQUIVALENT
INPUT NOISE VOLTAGE
vs
FREQUENCY
60
Vn
Hz
Vn − Equivalent Input Noise Voltage − nV/ Hz
VDD = 5 V
RS = 20
Ω
TA = 25°C
description
The TLC220x, TLC220xA, TLC220xB, and
TLC220xY are precision, low-noise operational
amplifiers using Texas Instruments Advanced
LinCMOS process. These devices combine the
noise performance of the lowest-noise JFET
amplifiers with the dc precision available
previously only in bipolar amplifiers. The
Advanced LinCMOS process uses silicon-gate
technology to obtain input offset voltage stability
with temperature and time that far exceeds that
obtainable using metal-gate technology. In
addition, this technology makes possible input
impedance levels that meet or exceed levels
offered by top-gate JFET and expensive
dielectric-isolated devices.
The combination of excellent DC and noise
performance with a common-mode input voltage
range that includes the negative rail makes these
devices an ideal choice for high-impedance,
low-level signal-conditioning applications in either
single-supply or split-supply configurations.
50
40
30
20
10
0
1
10
100
f − Frequency − Hz
1k
10 k
The device inputs and outputs are designed to withstand −100-mA surge currents without sustaining latch-up.
In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under
MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure
to ESD may result in degradation of the parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from − 40
°C
to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of −55°C to 125°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Advanced LinCMOS is a trademark of Texas Instruments Incorporated. All other trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright
1997−2008, Texas Instruments Incorporated
On products compliant to MIL PRF 38535, all parameters are tested
unless otherwise noted. On all other products, production
processing does not necessarily include testing of all parameters.
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
1
SLOS175B − FEBRUARY 1997 − REVISED JANUARY 2008
TLC220x, TLC220xA, TLC220xB, TLC220xY
Advanced LinCMOS LOW NOISE PRECISION
OPERATIONAL AMPLIFIERS
TLC2201 AVAILABLE OPTIONS
PACKAGED DEVICES
TA
VIOmax
AT 25°C
200
µV
0 C 70 C
0°C to 70°C
200
µV
500
µV
200
µV
−40 C 85 C
−40°C to 85°C
200
µV
500
µV
200
µV
−55 C 125 C
−55°C to 125°C
200
µV
500
µV
Vnmax
f = 10 Hz
AT 25°C
35 nV/√Hz
30 nV/√Hz
—
35 nV/√Hz
30 nV/√Hz
—
35 nV/√Hz
30 nV/√Hz
—
Vnmax
f = 1 kHz
AT 25°C
15 nV/√Hz
12 nV/√Hz
—
15 nV/√Hz
12 nV/√Hz
—
15 nV/√Hz
12 nV/√Hz
—
SMALL
OUTLINE†
(D)
TLC2201ACD
TLC2201BCD
TLC2201CD
TLC2201AID
TLC2201BID
TLC2201ID
TLC2201AMD
TLC2201BMD
TLC2201MD
TLC2201AMFK
TLC2201BMFK
TLC2201MFK
TLC2201AMJG
TLC2201BMJG
TLC2201MJG
—
—
—
—
CHIP
CARRIER
(FK)
CERAMIC
DIP
(JG)
PLASTIC
DIP
(P)
TLC2201ACP
TLC2201BCP
TLC2201CP
TLC2201AIP
TLC2201BIP
TLC2201IP
TLC2201AMP
TLC2201BMP
TLC2201MP
—
—
TLC2201Y
CHIP
FORM‡
(Y)
† The D packages are available taped and reeled. Add R suffix to device type (e.g. TLC220xBCDR).
‡ Chip forms are tested at 25°C only.
TLC2202 AVAILABLE OPTIONS
PACKAGED DEVICES
TA
VIOmax
AT 25°C
Vnmax
f = 10 Hz
AT 25°C
Vnmax
f = 1 kHz
AT 25°C
SMALL
OUTLINE†
(D)
TLC2202BCD
TLC2202ACD
TLC2202CD
TLC2202BID
TLC2202AID
TLC2202ID
TLC2202BMD
TLC2202AMD
TLC2202MD
PLASTIC
SMALL
OUTLINE
(PS)
—
—
TLC2202CPSR
—
—
—
—
—
—
CHIP
CARRIER
(FK)
—
—
—
—
—
—
TLC2202BMFK
TLC2202AMFK
TLC2202MFK
CERAMIC
DIP
(JG)
—
—
—
—
—
—
TLC2202BMJG
TLC2202AMJG
TLC2202MJG
PLASTIC
DIP
(P)
TLC2202BCP
TLC2202ACP
TLC2202CP
TLC2202BIP
TLC2202AIP
TLC2202IP
TLC2202BMP
TLC2202AMP
TLC2202MP
—
—
TLC2202Y
CHIP
FORM‡
(Y)
500
µV
0 C 70 C
0°C to 70°C
500
µV
1 mV
500
µV
− 40°C to 85 C
40 C 85°C
500
µV
1 mV
500
µV
− 55°C to 125°C
55 C 125 C
500
µV
1 mV
30 nV/√Hz
35 nV/√Hz
—
30 nV/√Hz
35 nV/√Hz
—
30 nV/√Hz
35 nV/√Hz
—
12 nV/√Hz
15 nV/√Hz
—
12 nV/√Hz
15 nV/√Hz
—
12 nV/√Hz
15 nV/√Hz
—
† The D packages are available taped and reeled. Add R suffix to device type (e.g. TLC220xBCDR).
‡ Chip forms are tested at 25°C only.
2
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
TLC220x, TLC220xA, TLC220xB, TLC220xY
Advanced LinCMOS LOW NOISE PRECISION
OPERATIONAL AMPLIFIERS
SLOS175B − FEBRUARY 1997 − REVISED JANUARY 2008
TLC2201
D, JG, OR P PACKAGE
(TOP VIEW)
TLC2202
PS, JG, OR P PACKAGE
(TOP VIEW)
TLC2202
D PACKAGE
(TOP VIEW)
NC
IN −
IN +
V
DD −
/GND
1
2
3
4
8
7
6
5
NC
V
DD +
OUT
NC
1OUT
1IN −
1IN +
V
DD −
/GND
1
2
3
4
8
7
6
5
V
DD +
2OUT
2IN −
2IN +
NC
NC
1OUT
1IN −
1IN +
V
DD −
/GND
NC
TLC2202
FK PACKAGE
(TOP VIEW)
1
2
3
4
5
6
7
14
13
12
11
10
9
8
NC
NC
V
DD +
2OUT
2IN −
2IN +
NC
TLC2201
FK PACKAGE
(TOP VIEW)
NC
IN −
NC
IN +
NC
4
5
6
7
8
3 2 1 20 19
18
17
16
15
14
9 10 11 12 13
NC
V
DD +
NC
OUT
NC
NC
1IN −
NC
1IN +
NC
4
5
6
7
8
3 2 1 20 19
18
17
16
15
14
9 10 11 12 13
NC
1OUT
NC
VDD+
NC
NC
2OUT
NC
2IN −
NC
NC
VDD − /GND
NC
NC
NC
NC
NC
NC
NC
NC
NC − No internal connection
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
NC
VDD − /GND
NC
2IN+
NC
3
SLOS175B − FEBRUARY 1997 − REVISED JANUARY 2008
TLC220x, TLC220xA, TLC220xB, TLC220xY
Advanced LinCMOS LOW NOISE PRECISION
OPERATIONAL AMPLIFIERS
equivalent schematic (each amplifier)
VDD +
Q3
Q6
Q9
Q12
Q14
Q16
IN +
C1
IN −
Q1
Q4
Q13
Q15
Q17
OUT
D1
Q7
Q8
Q10
Q11
R1
Q2
Q5
VDD − / GND
ACTUAL DEVICE COMPONENT COUNT
COMPONENT
Transistors
Resistors
Diodes
Capacitors
TLC2201
17
2
1
1
TLC2202
34
2
4
2
R2
4
POST OFFICE BOX 655303
•
DALLAS, TEXAS 75265
