TL(RE,SE,OE,YE,GE,FGE,PGE)1100D(T11)
TOSHIBA LED Lamps
TLRE1100D(T11),TLSE1100D(T11),TLOE1100D(T11)
TLYE1100D(T11),TLGE1100D(T11),TLFGE1100D(T11)
TLPGE1100D(T11)
Panel Circuit Indicators
•
•
•
•
•
•
•
•
•
Surface-mount devices
3.2 (L) mm × 2.8 (W) mm × 1.9 (H) mm
Flat-top type
InGaAℓP LEDs
High luminous intensity
Low drive current, high-intensity light emission
Colors: red, orange, yellow, green, pure green
Applications: automotive use, message signboards, backlighting,
etc.
Standard embossed tape packing: T11 (2000 pcs / reel)
8-mm tape reel
Unit: mm
Color and Material
Part Number
TLRE1100D
TLSE1100D
TLOE1100D
TLYE1100D
TLGE1100D
TLFGE1100D
TLPGE1100D
Color
Red
Red
Orange
Yellow
Green
Green
Pure Green
InGaAℓP
Material
JEDEC
JEITA
TOSHIBA
Weight: 0.035 g (typ.)
―
―
4-3R1
1
2011-03-15
TL(RE,SE,OE,YE,GE,FGE,PGE)1100D(T11)
Absolute Maximum Ratings
(Ta
=
25°C)
Part Number
TLRE1100D
TLSE1100D
TLOE1100D
TLYE1100D
TLGE1100D
TLFGE1100D
TLPGE1100D
50
4
120
−40
to 100
−40
to 100
Forward Current
I
F
(mA)
See Note 1
Reverse Voltage
V
R
(V)
Power Dissipation
P
D
(mW)
Operation
Temperature
T
opr
(°C)
Storage
Temperature
T
stg
(°C)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Forward current derating
I
F
– Ta
80
I
F
(mA)
Allowable forward current
60
40
20
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
Electrical Characteristics
(Ta
=
25°C)
Part Number
Min
TLRE1100D
TLSE1100D
TLOE1100D
TLYE1100D
TLGE1100D
TLFGE1100D
TLPGE1100D
Unit
1.6
1.6
1.6
1.6
1.6
1.6
1.6
Forward Voltage V
F
Typ.
2.05
2.05
2.05
2.1
2.1
2.1
2.1
V
Max
2.4
2.4
2.4
2.4
2.4
2.4
2.4
mA
μA
V
20
10
4
I
F
Reverse Current
I
R
Max
V
R
2
2011-03-15
TL(RE,SE,OE,YE,GE,FGE,PGE)1100D(T11)
Optical Characteristics–1
(Ta
=
25°C)
Part Number
TLRE1100D
TLSE1100D
TLOE1100D
TLYE1100D
TLGE1100D
TLFGE1100D
TLPGE1100D
Unit
Luminous Intensity I
V
Min
40
63
63
63
40
25
10
mcd
Typ.
120
210
210
180
100
45
25
mcd
Max
320
500
500
500
320
125
50
mcd
I
F
20
20
20
20
20
20
20
mA
Available Iv rank
Please see Note 2
PA / QA / RA / SA
QA / RA / SA / TA
QA / RA / SA / TA
QA / RA / SA / TA
PA / QA / RA / SA
NA / PA / QA
LA / MA / NA
Note 2: The specification on the above table is used for Iv classification of LEDs in Toshiba facility.
Each reel includes the same rank LEDs. Let the delivery ratio of each rank be unquestioned.
Luminous Intensity I
V
Min
10
16
25
40
63
100
160
250
mcd
Max
20
32
50
80
125
200
320
500
mcd
Rank
LA
MA
NA
PA
QA
RA
SA
TA
Unit
Optical Characteristics–2
(Ta
=
25°C)
Emission Spectrum
Part Number
Peak Emission
Wavelength
λ
p
Min
TLRE1100D
TLSE1100D
TLOE1100D
TLYE1100D
TLGE1100D
TLFGE1100D
TLPGE1100D
Unit
Typ.
644
623
612
590
574
568
562
nm
Max
Δλ
Typ.
18
15
15
13
11
11
11
nm
Dominant Wavelength
λ
d
Min
624
607
599
581
565
561
555
Typ.
630
613
605
587
571
565
558
nm
Max
638
621
613
595
576
569
564
mA
20
I
F
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
The cautions
•
•
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by the IR light.
This product is designed as a general display light source usage, and it has applied the measurement standard
that matched with the sensitivity of human's eyes. Therefore, it is not intended for usage of functional
application (ex. Light source for sensor, optical communication and etc) except general display light source.
3
2011-03-15
TL(RE,SE,OE,YE,GE,FGE,PGE)1100D(T11)
TLRE1100D
I
F
– V
F
50
Ta
=
25°C
(typ)
1000
Ta
=
25°C
I
V
– I
F
(typ.)
I
V
(mcd)
Luminous intensity
1.8
2.0
2.2
2.4
2.6
2.8
(mA)
30
500
300
I
F
Forward current
10
100
5
3
50
30
1
1.6
10
1
3
5
10
30
50
100
Forward voltage
V
F
(V)
Forward current
I
F
(mA)
I
V
– Tc
10
(typ.)
1.0
Wavelength characteristic
(typ.)
I
V
5
IF
=
20 mA
Ta
=
25°C
Relative luminous intensity
0
25
50
75
100
Relative luminous intensity
0.8
3
0.6
1
0.5
0.3
0.4
0.2
0.1
−25
0
580
600
620
640
660
680
700
Case temperature
Tc
(°C)
Wavelength
λ
(nm)
Radiation pattern
Ta
=
25°C
(typ.)
20°
30°
40°
50°
60°
70°
80°
90°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90
°
1.0
0
0.2
0.4
0.6
0.8
4
2011-03-15
TL(RE,SE,OE,YE,GE,FGE,PGE)1100D(T11)
TLSE1100D
I
F
– V
F
50
Ta
=
25°C
30
(typ)
1000
Ta
=
25°C
I
V
– I
F
I
V
(mcd)
(typ.)
(mA)
500
300
I
F
10
Luminous intensity
1.8
2.0
2.2
2.4
2.6
2.8
Forward current
100
5
3
50
30
1
1.6
10
1
3
5
10
30
50
100
Forward voltage
V
F
(V)
Forward current
I
F
(mA)
I
V
– Tc
10
(typ.)
1.0
Wavelength characteristic
(typ.)
I
V
5
IF
=
20 mA
Ta
=
25°C
Relative luminous intensity
0
25
50
75
100
Relative luminous intensity
0.8
3
0.6
1
0.5
0.3
0.4
0.2
0.1
−25
0
580
600
620
640
660
680
700
Case temperature
Tc
(°C)
Wavelength
λ
(nm)
Radiation pattern
Ta
=
25°C
(typ.)
20°
30°
40°
50°
60°
70°
80°
90°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90
°
1.0
0
0.2
0.4
0.6
0.8
5
2011-03-15
电源技术
