TLMEK3100
Vishay Semiconductors
Bicolor SMD LED PLCC-3
FEATURES
• SMD LED with exceptional brightness
• Multicolored
• Luminous intensity categorized
e3
• Compatible with automatic placement
equipment
• EIA and ICE standard package
• Compatible with infrared, vapor phase and wave
solder processes according to CECC
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
I
Vmax
/I
Vmin
≤
2.0
• Lead (Pb)-free device
APPLICATIONS
• Automotive: backlighting in dashboards and
switches
• Telecommunication: indicator and backlighting in
telephone and fax
• Indicator and backlight for audio and video
equipment
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
C
A
A
19140
DESCRIPTION
These devices have been designed to meet the
increasing demand for surface mounting technology.
The package of the TLMEK3100 is the PLCC-3
(equivalent to a size B tantalum capacitor).
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
This SMD device consists of a red and yellow chip. So
it is possible to choose the color in one device.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-3
• Product series: bicolor
• Angle of half intensity: ± 60°
PARTS TABLE
PART
TLMEK3100-GS08
TLMEK3100-GS18
COLOR, LUMINOUS INTENSITY
Red/yellow
Red/yellow
TECHNOLOGY
AlInGaP on GaAs
AlInGaP on GaAs
Document Number 83166
Rev. 1.8, 24-Sep-07
www.vishay.com
1
TLMEK3100
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
1
)
PARAMETER
Reverse voltage per diode
DC Forward current per diode
Surge forward current per diode
Power dissipation per diode
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Note:
1)
T
amb
= 25 °C, unless otherwise specified
t
≤
5s
mounted on PC board
(pad size > 16 mm
2
)
TEST CONDITION
I
R
= 10
μA
T
amb
≤
85 °C
t
p
≤
10
μs
T
amb
≤
85 °C
SYMBOL
V
R
I
F
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
6
30
0.5
100
125
- 40 to + 100
- 55 to + 100
260
400
UNIT
V
mA
A
mW
°C
°C
°C
°C
K/W
OPTICAL AND ELECTRICAL CHARACTERISTICS
1)
RED
PARAMETER
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Note:
1)
T
amb
= 25 °C, unless otherwise specified
TEST CONDITION
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
R
= 10
μA
V
R
= 0, f = 1 MHz
SYMBOL
I
V
λ
d
λ
p
ϕ
V
F
V
R
C
j
5
15
MIN
40
630
643
± 60
1.9
2.6
TYP.
MAX
125
UNIT
mcd
nm
nm
deg
V
V
pF
OPTICAL AND ELECTRICAL CHARACTERISTICS
1)
YELLOW
PARAMETER
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Note:
1)
T
amb
= 25 °C, unless otherwise specified
TEST CONDITION
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
R
= 10
μA
V
R
= 0, f = 1 MHz
SYMBOL
I
V
λ
d
λ
p
ϕ
V
F
V
R
C
j
5
15
MIN
40
581
588
590
± 60
2.0
2.6
TYP.
MAX
200
594
UNIT
mcd
nm
nm
deg
V
V
pF
www.vishay.com
2
Document Number 83166
Rev. 1.8, 24-Sep-07
TLMEK3100
Vishay Semiconductors
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
0°
10°
20°
30°
100
80
60
40
20
0
0
20
40
60
80
100
I
V
rel
- Relative Luminous Intensity
P
V
–Power Dissipation (mW)
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
95 10319
16614
T
amb
– Ambient Temperature (°C)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Rel. Luminous Intensity vs. Angular Displacement
40
35
100
I
F
- Forward Current (mA)
30
25
20
15
10
5
0
0
10
20
30
40
50
60
70
80
90 100
I
F
- Forward Current (mA)
10
1
1.0
95 10878
1.5
2.0
2.5
3.0
16615
T
amb
- Ambient Temperature (°C)
V
F
- Forward
Voltage
(V)
Figure 2. Forward Current vs. Ambient Temperature for InGaN
Figure 5. Forward Current vs. Forward Voltage
100
I
V
rel
- Relative Luminous Intensity
1.6
red
I
F
- Forward Current (mA)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
F
= 20 mA
10
1
0.1
0
95 9989
1
2
3
4
V
F
- Forward
Voltage
(V)
5
95 10880
0
10
20
30
40
50
60
70
80
90 100
T
amb
- Ambient Temperature (°C)
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
Document Number 83166
Rev. 1.8, 24-Sep-07
www.vishay.com
3
TLMEK3100
Vishay Semiconductors
1.2
2.0
I
V
rel
- Relative Luminous Intensity
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
2
5
10
20
50
I
V
rel
- Relative Luminous Intensity
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
I
F
= 20 mA
I
F
(mA)
t
P
/T
0.0
550 560 570 580 590 600 610 620 630 640 650
95 10881
96 11589
1
0.5
0.2
0.1 0.05
0.02
λ
-
Wavelength
(nm)
Figure 7. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
Figure 10. Relative Intensity vs. Wavelength
10
I
V
rel
- Relative Luminous Intensity
1
0.1
0.01
1
96 11588
10
100
I
F
- Forward Current (mA)
Figure 8. Relative Luminous Intensity vs. Forward Current
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
600 610 620 630 640 650 660 670 680 690 700
96 12075
I
rel
- Relative Intensity
λ
-
Wavelength
(nm)
Figure 9. Relative Intensity vs. Wavelength
www.vishay.com
4
Document Number 83166
Rev. 1.8, 24-Sep-07
TLMEK3100
Vishay Semiconductors
PACKAGE DIMENSIONS
in millimeters
Mounting Pad Layout
2.6 (2.8)
1.2
area covered
with
solder resist
4
1.6 (1.9)
Dimensions: IR and
Vaporphase
(Wave Soldering)
Drawing-No. : 6.541-5054.01-4
Issue: 2; 02.12.05
16276_1
Document Number 83166
Rev. 1.8, 24-Sep-07
4
0.5
www.vishay.com
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