TLMKE340.
Vishay Semiconductors
Bicolor SMD LED PLCC-4
FEATURES
• SMD LED with exceptional brightness
• Multicolored
• Luminous intensity categorized
e3
• EIA and ICE standard package
• Compatible with automatic placement
equipment
• Suitable for reflow and TTW soldering
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
I
Vmax
/I
Vmin
≤
1.6
• Lead (Pb)-free product - RoHS compliant - Lead
(Pb)-free soldering
• Jedec level 2a
APPLICATIONS
• Automotive: backlighting in dashboards and
switches
• Telecommunication: indicator and backlighting in
telephone and fax
• Indicator and backlight for audio and video
equipment
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
• General use
19211
DESCRIPTION
These devices have been designed to meet the
increasing demand for surface mounting technology.
The package of the TLMKE340. is the PLCC-4.
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
This SMD device consists of a red and yellow chip. So
it is possible to choose the color in one device.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-4
• Product series: bicolor
• Angle of half intensity: ± 60°
PARTS TABLE
PART
TLMKE3400-GS08
TLMKE3401-GS08
COLOR, LUMINOUS INTENSITY
Red/yellow, I
V
> 50 mcd
Red/yellow, I
V
> 63 mcd
TECHNOLOGY
AlInGaP on GaAs
AlInGaP on GaAs
Document Number 83227
Rev. 1.4, 25-Sep-07
www.vishay.com
1
TLMKE340.
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
1)
TLMKE340.
PARAMETER
Reverse voltage per diode
DC Forward current per diode
Surge forward current per diode
Power dissipation per diode
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/
ambient
t
≤
5s
mounted on PC board
(pad size > 16 mm
2
)
TEST CONDITION
I
R
= 10
μA
T
amb
≤
80 °C
t
p
≤
10
μs
SYMBOL
V
R
I
F
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
6
30
0.1
80
125
- 40 to + 100
- 40 to + 100
260
560
UNIT
V
mA
A
mW
°C
°C
°C
°C
K/W
Note:
1)
T
amb
= 25 °C, unless otherwise specified
OPTICAL AND ELECTRICAL CHARACTERISTICS
1)
TLMKE340., RED
PARAMETER
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Note:
1)
T
amb
= 25 °C, unless otherwise specified
TEST CONDITION
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
R
= 10
μA
V
R
= 0, f = 1 MHz
PART
TLMKE3400
TLMKE3401
SYMBOL
I
V
I
V
λ
d
λ
p
ϕ
V
F
V
R
C
j
6
15
MIN
50
63
630
643
± 60
1.9
2.6
TYP.
MAX
200
160
UNIT
mcd
mcd
nm
nm
deg
V
V
pF
OPTICAL AND ELECTRICAL CHARACTERISTICS
1)
TLMKE340., YELLOW
PARAMETER
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Note:
1)
T
amb
= 25 °C, unless otherwise specified
TEST CONDITION
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
R
= 10
μA
V
R
= 0, f = 1 MHz
PART
TLMKE3400
TLMKE3401
SYMBOL
I
V
I
V
λ
d
λ
p
ϕ
V
F
V
R
C
j
6
15
MIN
80
100
581
588
590
± 60
2
2.6
TYP.
MAX
320
250
594
UNIT
mcd
mcd
nm
nm
deg
V
V
pF
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2
Document Number 83227
Rev. 1.4, 25-Sep-07
TLMKE340.
Vishay Semiconductors
LUMINOUS INTENSITY CLASSIFICATION AND GROUP COMBINATIONS, TLMKE34..
1)
RED
Ub
50...80 mcd
Vb
80...125 mcd
Y
E
L
L
O
W
Wa
100...160 mcd
Wb
125...200 mcd
Xa
160...250 mcd
Xb
200...320 mcd
Note:
1)
followed by 00 or 01
00
00
00
00
00
Va
63...100 mcd
00
00
01
00
01
00
01
00
Vb
80...125 mcd
00
00
01
00
01
00
01
00
Wa
100...160 mcd
00
00
01
00
01
00
01
00
Wb
125...200 mcd
00
00
00
00
00
COLOR CLASSIFICATION
DOMINANT WAVELENGTH (NM)
GROUP
MAX
1
2
3
4
5
6
581
583
585
587
589
591
YELLOW
MAX
584
586
588
590
592
594
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
40
35
I
F
- Forward Current (mA)
30
25
20
1 chip on
15
10
5
0
0
19476
1000
t
P
/T = 0.01
60 °C
2 chips on
80
°C
I
FM
- Forward Current (mA)
0.02
0.05
0.1
100
0.2
0.5
1
10
0.01
10 20 30 40 50 60 70
80
90 100
T
amb
- Ambient Temperature (°C)
0.1
1
10
100
16621
t
P
- Pulse Length (ms)
Figure 1. Forward Current vs. Ambient Temperature for InGaN
Figure 2. Forward Current vs. Pulse Duration
Document Number 83227
Rev. 1.4, 25-Sep-07
www.vishay.com
3
TLMKE340.
Vishay Semiconductors
0°
10°
20°
30°
I
V
rel
- Relative Luminous Intensity
2.0
I
V
rel
- Relative Luminous Intensity
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
16618-1
Red
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
10 20 30 40 50 60 70
80
90 100
T
amb
- Ambient Temperature (°C)
95 10319
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Figure 6. Rel. Luminous Intensity vs. Ambient Temperature
100
10
I
V
rel
- Relative Luminous Intensity
Yellow/Red
I
F
- Forward Current (mA)
Yellow/Red
1.0
10
0.1
1
1.0
95 10878-1
0.01
1.5
2.0
2.5
3.0
1
96 11588-1
V
F
- Forward
Voltage
(V)
10
I
F
- Forward Current (mA)
100
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Relative Luminous Intensity vs. Forward Current
1.6
I
V
rel
- Relative Luminous Intensity
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
95 10880-1
I
F
= 20 mA
Yellow
10 20 30 40 50 60 70
80
90 100
T
amb
- Ambient Temperature (°C)
1.2
1.1
Red
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
600 610 620 630 640 650 660 670 680 690 700
λ
-
Wavelength
(nm)
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
I
rel
- Relative Intensity
96 12075-1
Figure 8. Relative Intensity vs. Wavelength
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Document Number 83227
Rev. 1.4, 25-Sep-07
TLMKE340.
Vishay Semiconductors
1.2
1.1
I
F
= 20 mA
Yellow
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
550 560 570 580 590 600 610 620 630 640 650
λ
-
Wavelength
(nm)
V
F rel
- Relative Forward
Voltage
(V)
2.15
2.10
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
0
10
20
30
40
50
60
70
80
90 100
I
F
= 20 mA
Yellow
I
V
rel
- Relative Luminous Intensity
95 10881-1
16616
T
amb
- Ambient Temperature (°C)
Figure 9. Relative Intensity vs. Wavelength
Figure 11. Relative Forward Voltage vs. Ambient Temperature
2.10
V
Frel
- Relative Forward
Voltage
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
1.60
0
I
F
= 20 mA
Red
10
20
30
40
50
60
70
80
90 100
16617
T
am
b
- Ambient Temperature (°C)
Figure 10. Relative Forward Voltage vs. Ambient Temperature
PACKAGE DIMENSIONS
in millimeters
3.5 ± 0.2
1.75 ± 0.15
technical drawings
according to DIN
specifications
0.9
Mounting Pad Layout
4
1.2
2.6 (2.8)
0.5
1.6 (1.9)
area covered
with
solder resist
Dimensions: IR and
Vaporphase
(Wave Soldering)
Pin identification
+ 0.15
C
A
2.8
A
C
∅
2.4
3 + 0.15
Drawing-No. : 6.541-5057.01-4
Issue: 1; 15.07.04
19126-2
Document Number 83227
Rev. 1.4, 25-Sep-07
0.8
0.7
4
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