TLMF310.
Vishay Semiconductors
Standard SMD LED PLCC-2
FEATURES
• SMD LED with exceptional brightness
• Luminous intensity categorized
• Compatible with automatic placement
e3
equipment
• EIA and ICE standard package
• Compatible with infrared, vapor phase and wave
solder processes according to CECC
• Available in 8 mm tape
• Low profile package
• Non-diffused lens: excellent for coupling to light
pipes and backlighting
• Low power consumption
• Luminous intensity ratio in one packaging unit
I
Vmax
/I
Vmin
≤
1.6
• Lead (Pb)-free device
19225
DESCRIPTION
This device has been designed to meet the increasing
demand for AlInGaP technology.
The package of the TLMF310. is the PLCC-2
(equivalent to a size B tantalum capacitor).
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled up with clear epoxy.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: SMD PLCC-2
• Product series: standard
• Angle of half intensity: ± 60°
APPLICATIONS
• Automotive: backlighting in dashboards and
switches
• Telecommunication: indicator and backlighting in
telephone and fax
• Indicator and backlight for audio and video
equipment
• Indicator and backlight in office equipment
• Flat backlight for LCDs, switches and symbols
PARTS TABLE
PART
TLMF3100-GS08
TLMF3100-GS18
TLMF3101-GS08
TLMF3101-GS18
COLOR, LUMINOUS INTENSITY
Soft orange, I
V
> 25 mcd
Soft orange, I
V
> 25 mcd
Soft orange, I
V
= (40 to 125) mcd
Soft orange, I
V
= (40 to 125) mcd
TECHNOLOGY
AllnGaP on GaAs
AllnGaP on GaAs
AllnGaP on GaAs
AllnGaP on GaAs
Document Number 83152
Rev. 1.8, 24-Sep-07
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TLMF310.
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
1)
PARAMETER
Reverse voltage
DC Forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/
ambient
t
≤
5s
mounted on PC board
(pad size > 16 mm
2
)
T
amb
≤
60 °C
t
p
≤
10
μs
T
amb
≤
60 °C
TEST CONDITION
SYMBOL
V
R
I
F
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
30
0.1
80
100
- 40 to + 100
- 55 to + 100
260
400
UNIT
V
mA
A
mW
°C
°C
°C
°C
K/W
Note:
1)
T
amb
= 25 °C, unless otherwise specified
OPTICAL AND ELECTRICAL CHARACTERISTICS
1)
TLMF310., SOFT ORANGE
PARAMETER
Luminous intensity
Dominant wavelength
Peak wavelength
Angle of half intensity
Forward voltage
Reverse voltage
Junction capacitance
Note:
1)
T
amb
= 25 °C, unless otherwise specified
in one packing unit I
Vmax
/I
Vmin
≤
1.6
TEST CONDITION
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 20 mA
I
R
= 10
μA
V
R
= 0, f = 1 MHz
PART
TLMF3100
TLMF3101
SYMBOL
I
V
I
V
λ
d
λ
p
ϕ
V
F
V
R
C
j
5
15
MIN
25
40
598
605
610
± 60
2
2.6
TYP.
50
125
611
MAX
UNIT
mcd
mcd
nm
nm
deg
V
V
pF
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
40
100
P
V
–Power Dissipation (mW)
35
I
F
- Forward Current (mA)
80
60
40
20
0
0
20
40
60
80
100
30
25
20
15
10
5
0
0
10
20
30
40
50
60
70
80
90 100
16614
T
amb
– Ambient Temperature (°C)
16615
T
amb
- Ambient Temperature (°C)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature for InGaN
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2
Document Number 83152
Rev. 1.8, 24-Sep-07
TLMF310.
Vishay Semiconductors
0°
10°
20°
30°
2.0
I
V
rel
- Relative Luminous Intensity
I
V
rel
- Relative Luminous Intensity
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1
2
5
10
20
50
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
95 10319
I
F
(mA)
t
P
/T
96 11589
1
0.5
0.2
0.1 0.05
0.02
Figure 3. Rel. Luminous Intensity vs. Angular Displacement
Figure 6. Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
100
I
V
rel
- Relative Luminous Intensity
10
I
F
- Forward Current (mA)
1
10
0.1
1
1.0
95 10882
0.01
1.5
2.0
2.5
V
F
- Forward
Voltage
(V)
3.0
96 11588
1
10
100
I
F
- Forward Current (mA)
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Relative Luminous Intensity vs. Forward Current
I
V
rel
- Relative Luminous Intensity
1.6
1.4
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
10
20
30
40
50
60
70
80
90 100
soft orange
1.0
0.8
0.6
0.4
0.2
0.0
I
rel
- Relative Intensity
1.2
560 570 580 590 600 610 620 630 640 650 660
95 10885
95 10883
T
amb
- Ambient Temperature (°C)
λ
-
Wavelength
(nm)
Figure 5. Rel. Luminous Intensity vs. Ambient Temperature
Figure 8. Relative Intensity vs. Wavelength
Document Number 83152
Rev. 1.8, 24-Sep-07
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TLMF310.
Vishay Semiconductors
2.10
1000.00
V
Frel
- Forward
Voltage
(V)
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
1.65
1.60
0
10
20
I
F
= 20 mA
I
FM
- Forward Current (mA)
t
p
/T = 0.01
0.02
0.05
0.1
100.00
0.2
0.5
1
10.00
0.01
16620
soft orange
30
40
50
60
70
80
90 100
0.10
1.00
10.00
100.00
16619
T
amb
- Ambient Temperature (°C)
t
p
- Pulse Length (ms)
Figure 9. Forward Voltage vs. Ambient Temperature
Figure 10. Forward Current vs. Pulse Length
PACKAGE DIMENSIONS
in millimeters
3.5 ± 0.2
1.75 ± 0.10
technical drawings
according to DIN
specifications
0.9
Mounting Pad Layout
Pin identification
1.2
area covered
with
solder resist
2.6 (2.8)
+ 0.15
2.2
C
A
2.8
4
1.6 (1.9)
?
2.4
3
+ 0.15
Drawing-No.: 6.541-5025.01-4
Issue:
8;
22.11.05
95 11314-1
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4
Document Number 83152
Rev. 1.8, 24-Sep-07
TLMF310.
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs,
damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death
associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 83152
Rev. 1.8, 24-Sep-07
www.vishay.com
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