VISHAY
TLMW3145
Vishay Semiconductors
High Intensity SMD LED
Description
This device have been designed to meet the increas-
ing demand for white SMD LED.
The package of the TLMW3145 is the PLCC-2 (equiv-
alent to a size B tantalum capacitor).
It consists of a lead frame which is embedded in a
white thermoplast. The reflector inside this package is
filled with a mixture of epoxy and TAG phosphor.
The TAG phosphor converts the blue emission par-
tially to yellow, which mixes with the remaining blue to
give white.
94 8553
Features
• High efficient InGaN technology
• Chromaticity Coordinate categorized according to
CIE1931 per packing unit
• Luminous intensity ratio in one packing unit
I
Vmax
/I
Vmin
≤
1.75
• Typical color temperature 5500 K
• ESD class 1
• EIA and ICE standard package
• Compatible with infrared, vapor phase and wave
solder processes according to CECC
• Available in 8 mm tape reel
• Lead-free device
Applications
Automotive: Backlighting in dashboards and switches
Telecommunication: Indicator and backlighting in
telephone and fax
Backlighting for audio and video equipment
Backlighting in office equipment
Indoor and outdoor message boards
Flat backlight for LCDs, switches and symbols
Illumination purposes, alternative to incandescent
lamps
General use
Parts Table
Part
TLMW3145
Color, Luminous Intensity
White, I
V
= 65 mcd (typ.)
Angle of Half Intensity (±ϕ)
60 °
Technology
InGaN / TAG on SiC
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
TLMW3145
Parameter
Reverse voltage
DC Forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
T
amb
≤
70 °C
t
p
≤
10
µs
T
amb
≤
70 °C
Test condition
Symbol
V
R
I
F
I
FSM
P
V
T
j
T
amb
Value
5
20
0.1
85
100
- 40 to + 100
Unit
V
mA
A
mW
°C
°C
Document Number 83164
Rev. 1.3, 20-Jul-04
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1
TLMW3145
Vishay Semiconductors
Parameter
Storage temperature range
Soldering temperature
Thermal resistance junction/
ambient
t
≤
5s
mounted on PC board
(pad size > 16 mm
2
)
Test condition
Symbol
T
stg
T
sd
R
thJA
Value
- 40 to + 100
260
350
VISHAY
Unit
°C
°C
K/W
Optical and Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
White
TLMW3145
Parameter
Luminous intensity
Chromaticity coordinate x acc.
to CIE 1931
Chromaticity coordinate y acc.
to CIE 1931
Angle of half intensity
Forward voltage
Reverse voltage
Temperature coefficient of V
F
Temperature coefficient of I
V
Test condition
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
F
= 10 mA
I
R
= 10
µA
I
F
= 20 mA
I
F
= 20 mA
Part
TLMW3145
TLMW3145
TLMW3145
Symbol
I
V
x
y
ϕ
V
F
V
R
TC
VF
TC
IV
5
-4
- 0.5
Min
40
0.305
0.260
± 60
3.5
4.0
Typ.
65
Max
100
0.375
0.440
deg
V
V
mV/K
%/K
Unit
mcd
Chromaticity Coordinate Classification
Group
min
4
5
0.305
0.330
X
max
0.350
0.375
min
0.260
0.310
Y
max
0.390
0.440
Luminous Intensity Classification
Group
min
UA
UB
40
58
Luminous Intensity (mcd)
max
70
100
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Document Number 83164
Rev. 1.3, 20-Jul-04
VISHAY
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
90
80
70
60
50
40
30
20
10
0
0 10 20
16191
TLMW3145
Vishay Semiconductors
10
I
Vrel
- Relative Luminous Intensity
P
V
- Power Dissipation ( mW )
1
0.1
30 40 50 60 70 80 90 100
16194
0.01
1
10
I
F
- Forward Current ( mA )
100
T
amb
- Ambient Temperature (
°
C )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 4. Relative Luminous Intensity vs. Forward Current
25
I
F
- Forward Current ( mA )
100
I
F
- Forward Current ( mA
)
20
15
10
5
0
10
0 10 20
30 40 50 60 70 80 90 100
16195
1
2.0
2.5
3.0
3.5
4.0
4.5
5.0
16192
T
amb
- Ambient Temperature (
°
C )
V
F
- Forward Voltage ( V )
Figure 2. Forward Current vs. Ambient Temperature for AlInGaP
Figure 5. Forward Current vs. Forward Voltage
30
I
F
- Forward Current ( mA )
25
20
15
10
5
0
0
II
I
V rel
- Relative Luminous Intensity
MTTF, confidence level 60%
failure criteria I
V
/I
V0
= 50%
I
ı
II
ı
5000h
10000h
100
90
80
70
60
50
40
30
20
10
0
400 450 500 550 600 650 700 750 800
16196
I
10 20 30 40 50 60 70 80 90 100
T
amb
- Ambient Temperature (
°C
)
16193
λ
- Wavelength ( nm )
Figure 3. Forward Current vs. Ambient Temperature for AlInGaP
Figure 6. Relative Intensity vs. Wavelength
Document Number 83164
Rev. 1.3, 20-Jul-04
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3
TLMW3145
Vishay Semiconductors
0°
I
V re l
- Relative Luminous Intensity
I
Vrel
- Relative Luminous Intensity
VISHAY
10°
20°
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 10 20
30 40 50 60 70 80 90 100
30°
1.0
0.9
0.8
0.7
0.6
40°
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
16197
T
amb
- Ambient Temperature (
°
C )
95 10319
Figure 7. Rel. Luminous Intensity vs. Ambient Temperature
Figure 10. Rel. Luminous Intensity vs. Angular Displacement
0.50
f - Chromaticity coordinate shift (x,y)
0.345
Coordinates of Colorgroups
White
0.340
0.335
0.330
Y
0.325
0.320
0.315
X
0.45
D65
0.40
b
0.35
a
0.30
0.25
0.20
0.20
3
c
d
5
e
f
A
.
.
4
a=
b=
c=
d=
e=
f=
20000K
10000K
7000K
6000K
5000K
4000K
0.25
0.30
0.35
0.40
0.45
0.50
0
10
20
30
40
50
60
16284
Coordinates of Colorgroups
16198
I
F
- Forward Current ( mA )
Figure 8. Chromaticity Coordinate Shift vs. Forward Current
Figure 11. Coordinates of Colorgroups
3.95
3.90
I
F
- Forward Voltage ( V )
3.85
3.80
3.75
3.70
3.65
3.60
3.55
3.50
3.45
0 10 20
30 40 50 60 70 80 90 100
16199
T
amb
- Ambient Temperature (
°
C )
Figure 9. Forward Voltage vs. Ambient Temperature
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Document Number 83164
Rev. 1.3, 20-Jul-04
VISHAY
Package Dimensions in mm
TLMW3145
Vishay Semiconductors
3.5 ± 0.2
+ 0.10
1.65- 0.05
technical drawings
according to DIN
specifications
0.85
Mounting Pad Layout
Pin identification
1.2
area covered with
solder resist
2.6 (2.8)
+ 0.15
2.2
C
A
2.8
4
1.6 (1.9)
∅
2.4
3
+ 0.15
Dimensions: IR and Vaporphase
(Wave Soldering)
Drawing-No. : 6.541-5025.01-4
Issue: 7; 05.04.04
95 11314
Document Number 83164
Rev. 1.3, 20-Jul-04
4
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