TLP171A
Photocouplers
Photorelay
TLP171A
1. Applications
•
•
•
•
•
Mechanical relay replacements
Security Systems
Home Electric Appliances
Factory Automation (FA)
Office Equipment
2. General
The TLP171A photorelay consists of a photo MOSFET optically coupled to an infrared light emitting diode. It is
housed in a 4-pin package with 2.54-mm lead pitch and 2.1-mm height. This photorelay requires 0.2 mA of LED
current to turn it on. It is suitable for applications that need electrical power savings.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
Package: SOP(2.54SOP4) (Height 2.1 mm, pitch 2.54 mm)
Normally opened (1-Form-A)
OFF-state output terminal voltage: 60 V (min)
Trigger LED current: 0.1 mA (max)(t≤1s)
0.2 mA (max)(t >1s)
ON-state current: 400 mA (max)
ON-state resistance: 2
Ω
(max)
Isolation voltage: 1500 Vrms (min)
Safety Standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
4. Packaging and Pin Assignment
1: Anode
2: Cathode
3: Drain
4: Drain
11-5H1S
Start of commercial production
©2017
Toshiba Electronic Devices & Storage Corporation
1
2012-10
2017-08-24
Rev.3.0
TLP171A
5. Internal Circuit
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward current
Input forward current derating
Input forward current (pulsed)
Input reverse voltage
Input power dissipation
Input power dissipation derating
Junction temperature
Detector OFF-state output terminal voltage
ON-state current
ON-state current derating
ON-state current (pulsed)
Output power dissipation
Output power dissipation derating
Junction temperature
Common Storage temperature
Operating temperature
Lead soldering temperature
Isolation voltage
(10 s)
AC, 60 s, R.H.
≤
60 %
(T
a
≥
25
)
(T
a
≥
25
)
(t = 100 ms)
(T
a
≥
25
)
(T
a
≥
25
)
(100
µs
pulse, 100 pps)
Symbol
I
F
∆I
F
/∆T
a
I
FP
V
R
P
D
∆P
D
/∆T
a
T
j
V
OFF
I
ON
∆I
ON
/∆T
a
I
ONP
P
O
∆P
O
/∆T
a
T
j
T
stg
T
opr
T
sol
BV
S
(Note 1)
Note
Rating
30
-0.3
1
5
50
-0.5
125
60
400
-4.0
1.2
300
-3.0
125
-55 to 125
-40 to 85
260
1500
Vrms
Unit
mA
mA/
A
V
mW
mW/
V
mA
mA/
A
mW
mW/
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are
shorted together.
Note:
7. Recommended Operating Conditions (Note)
Characteristics
Supply voltage
Input forward current
ON-state current
Operating temperature
Symbol
V
DD
I
F
I
ON
T
opr
Note
Min
-20
Typ.
0.5
Max
48
25
320
65
Unit
V
mA
mA
Note:
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
©2017
Toshiba Electronic Devices & Storage Corporation
2
2017-08-24
Rev.3.0
TLP171A
8. Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward voltage
Input reverse current
Input capacitance
Detector OFF-state current
Output capacitance
Symbol
V
F
I
R
C
t
I
OFF
C
OFF
Note
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1 MHz
V
OFF
= 60 V
V = 0 V, f = 1 MHz
Min
1.1
Typ.
1.27
30
1
130
Max
1.4
10
1000
Unit
V
µA
pF
nA
pF
9. Coupled Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Trigger LED current
Return LED current
ON-state resistance
Symbol
I
FT
I
FC
R
ON
Note
Test Condition
I
ON
= 400 mA, t≤1s
I
ON
= 400 mA, t>1s
I
OFF
= 100
µA
I
ON
= 400 mA, I
F
= 0.5 mA, t < 1 s
Min
Typ.
0.02
0.001
1
Max
0.1
0.2
2
Unit
mA
mA
mA
Ω
10. Isolation Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Total capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Condition
Min
5
×
10
10
1500
Typ.
0.8
10
14
3000
3000
Max
Vdc
Unit
pF
Ω
Vrms
(Note 1) V
S
= 0 V, f = 1 MHz
(Note 1) V
S
= 500 V, R.H.
≤
60 %
(Note 1) AC, 60 s
AC, 1s in oil
DC, 60s in oil
Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are
shorted together.
11. Switching Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Turn-on time
Symbol
t
ON
Note
Test Condition
See Fig. 11.1.
R
L
= 200
Ω,
V
DD
= 20 V, I
F
= 0.5 mA
See Fig. 11.1.
R
L
= 200
Ω,
V
DD
= 20 V, I
F
= 1.0 mA
Turn-off time
t
OFF
See Fig. 11.1.
R
L
= 200
Ω,
V
DD
= 20 V, I
F
= 0.5 mA
See Fig. 11.1.
R
L
= 200
Ω,
V
DD
= 20 V, I
F
= 1.0 mA
Min
Typ.
3.5
1.5
1
1.5
Max
10
5
5
5
Unit
ms
Fig. 11.1 Switching Time Test Circuit and Waveform
©2017
Toshiba Electronic Devices & Storage Corporation
3
2017-08-24
Rev.3.0
TLP171A
12. Characteristics Curves
12.1. Characteristics Curves (Note)
Fig. 12.1.1 I
F
- T
a
Fig. 12.1.2 I
ON
- T
a
Fig. 12.1.3 I
F
- V
F
Fig. 12.1.4 I
ON
- V
ON
Fig. 12.1.5 R
ON
- T
a
Fig. 12.1.6 I
FT
- T
a
©2017
Toshiba Electronic Devices & Storage Corporation
4
2017-08-24
Rev.3.0
TLP171A
Fig. 12.1.7 t
ON
, t
OFF
- I
F
Fig. 12.1.8 t
ON
, t
OFF
- T
a
Fig. 12.1.9 I
OFF
- T
a
Note:
Fig. 12.1.10 I
OFF
- V
OFF
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
©2017
Toshiba Electronic Devices & Storage Corporation
5
2017-08-24
Rev.3.0
