TLP185(SE
Photocouplers
GaAs Infrared LED & Photo Transistor
TLP185(SE
1. Applications
•
•
•
•
Office Equipment
Programmable Logic Controllers (PLCs)
AC Adapters
I/O Interface Boards
2. General
The TLP185(SE consist of a photo transistor optically coupled to gallium arsenide infrared emitting diode.
The TLP185(SE photocoupler is housed in the very small and thin SO6 package.
Since TLP185(SE is smaller than DIP package, it's suitable for high-density surface mounting application such
as programmable controllers.
3. Features
(1)
(2)
(3)
(4)
(5)
Collector-emitter voltage: 80 V (min)
Current transfer ratio: 50% (min)
Rank GB: 100% (min)
Isolation voltage: 3750 Vrms (min)
Operating temperature: -55 to 110
Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)
: EN62368-1 (Pending) (Note 1)
CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory
Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (V4)
(V4).
4. Packaging and Pin Assignment
1: Anode
3: Cathode
4: Emitter
6: Collector
11-4M1S
Start of commercial production
©2015-2018
Toshiba Electronic Devices & Storage Corporation
1
2013-01
2018-01-05
Rev.6.0
TLP185(SE
5. Principle of Operation
5.1. Mechanical Parameters
Characteristics
Creepage distances
Clearance
Internal isolation thickness
Min
5.0
5.0
0.4
Unit
mm
6. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward current
Input forward current derating
Input forward current (pulsed)
Input reverse voltage
Input power dissipation
Input power dissipation
derating
Junction temperature
Detector Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Collector power dissipation
derating
Junction temperature
Common Operating temperature
Storage temperature
Lead soldering temperature
Total power dissipation
Isolation voltage
AC, 60 s, R.H.
≤
60%
(10 s)
(T
a
≥
25
)
(T
a
≥
90
)
(T
a
≥
90
)
Symbol
I
F
∆I
F
/∆T
a
I
FP
V
R
P
D
∆P
D
/∆T
a
T
j
V
CEO
V
ECO
I
C
P
C
∆P
C
/∆T
a
T
j
T
opr
T
stg
T
sol
P
T
BV
S
(Note 2)
(Note 1)
Note
Rating
50
-1.5
1
5
100
-2.86
125
80
7
50
150
-1.5
125
-55 to 110
-55 to 125
260
200
3750
mW
Vrms
Unit
mA
mA/
A
V
mW
mW/
V
V
mA
mW
mW/
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW)
≤
100
µs,
f = 100 Hz
Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
Note:
©2015-2018
Toshiba Electronic Devices & Storage Corporation
2
2018-01-05
Rev.6.0
TLP185(SE
7. Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward voltage
Input reverse current
Input capacitance
Detector Collector-emitter breakdown
voltage
Emitter-collector breakdown
voltage
Dark Current
Collector-emitter capacitance
Symbol
V
F
I
R
C
t
V
(BR)CEO
V
(BR)ECO
I
DARK
C
CE
Note
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 48 V
V
CE
= 48 V, T
a
= 85
V = 0 V, f = 1 MHz
Min
1.1
80
7
Typ.
1.25
30
0.01
2
10
Max
1.4
5
0.08
50
pF
µA
Unit
V
µA
pF
V
8. Coupled Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Current transfer ratio
Saturated current transfer ratio
Collector-emitter saturation
voltage
Symbol
I
C
/I
F
I
C
/I
F(sat)
V
CE(sat)
Note
(Note 1)
Test Condition
I
F
= 5 mA, V
CE
= 5 V
I
F
= 5 mA, V
CE
= 5 V, Rank GB
I
F
= 1 mA, V
CE
= 0.4 V
I
F
= 1 mA, V
CE
= 0.4 V, Rank GB
I
C
= 2.4 mA, I
F
= 8 mA
I
C
= 0.2 mA, I
F
= 1 mA
I
C
= 0.2 mA, I
F
= 1 mA, Rank GB
OFF-state collector current
I
C(off)
V
F
= 0.7 V, V
CE
= 48 V
Min
50
100
30
Typ.
60
0.2
1
Max
600
600
0.3
0.3
10
µA
V
Unit
%
Note 1: See Table 8.1 for current transfer ratio.
Table 8.1 Current Transfer Ratio (CTR) Rank (Note) (Unless otherwise specified, T
a
= 25
)
Rank
Test Condition
Current
transfer ratio
I
C
/I
F
Min
50
50
100
100
200
75
100
150
200
Current
transfer ratio
I
C
/I
F
Max
600
150
300
600
600
150
200
300
400
Marking of
Classification
Blank, YE, GR, GB,
BL, Y+, G, G+, B
YE, Y+
GR, G, G+
GB, GR, BL, G, G+, B
BL, B
Y+
G
G+
B
Unit
Blank
Y
GR
GB
BL
YH
GRL
GRH
BLL
I
F
= 5 mA, V
CE
= 5 V
%
Note:
Specify both the part number and a rank in this format when ordering.
Example: TLP185(GB,SE
For safety standard certification, however, specify the part number alone.
Example: TLP185(GB,SE: TLP185
©2015-2018
Toshiba Electronic Devices & Storage Corporation
3
2018-01-05
Rev.6.0
TLP185(SE
9. Isolation Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Total capacitance (input to
output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Condition
Min
1
×
10
12
3750
Typ.
0.8
10
14
10000
10000
Max
Vdc
Unit
pF
Ω
Vrms
(Note 1) V
S
= 0 V, f = 1 MHz
(Note 1) V
S
= 500 V, R.H.
≤
60%
(Note 1) AC, 60 s
AC, 1 s in oil
DC, 60 s in oil
Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
10. Switching Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Rise time
Fall time
Turn-on time
Turn-off time
Turn-on time
Storage time
Turn-off time
Symbol
t
r
t
f
t
on
t
off
t
on
t
s
t
off
See Fig. 10.1
V
CC
= 5 V, I
F
= 16 mA,
R
L
= 1.9 kΩ
Note
Test Condition
V
CC
= 10 V, I
C
= 2 mA,
R
L
= 100
Ω
Min
Typ.
2
3
3
3
0.5
25
40
Max
Unit
µs
Fig. 10.1 Switching Time Test Circuit and Waveform
©2015-2018
Toshiba Electronic Devices & Storage Corporation
4
2018-01-05
Rev.6.0
TLP185(SE
11. Characteristics Curves (Note)
Fig. 11.1 I
F
- T
a
Fig. 11.2 P
C
- T
a
Fig. 11.3 I
FP
- D
R
Fig. 11.4 I
F
- V
F
Fig. 11.5
∆
V
F
/
∆
T
a
- I
F
Fig. 11.6 I
FP
- V
FP
©2015-2018
Toshiba Electronic Devices & Storage Corporation
5
2018-01-05
Rev.6.0
