TLP2310
Photocouplers
GaAℓAs Infrared LED & Photo IC
TLP2310
1. Applications
•
•
•
Programmable Logic Controllers (PLCs)
Battery Management System (BMS)
Industrial Inverters
2. General
The TLP2310 is a 5-Mbps low-power photocoupler in the small SO6 package.
The TLP2310 consumes supply current (I
DDL
/I
DDH
) of only 0.3 mA maximum over the entire operating
temperature range of -40
to 125
and operates at a supply voltage as low as 2.7 V, contributing to a reduction
in power consumption of various systems.
The input forward current can be less than 1 mA maximum, allowing direct drive by a microcontroller.
The detector has a totem-pole output stage with current sourcing and sinking capabilities. The TLP2310 has an
internal Faraday shield that provides a guaranteed common-mode transient immunity of
±25
kV/µs.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Package: SO6
Data transfer rate: 5 MBd (typ.) (NRZ)
Supply current: 0.3 mA (max)
Threshold input current: 1.0 mA (max)
Supply voltage: 2.7 to 5.5 V
Operating temperature: -40 to 125
Propagation delay time: 250 ns (max)
Pulse width distortion: 30 ns (max)
Isolation voltage: 3750 Vrms (min)
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)
CQC-approved: GB4943.1, GB8898 Thailand Factory
(10) Safety standards
Note 1: When a VDE approved type is needed, please designate the Option (V4)
(V4).
Start of commercial production
©2016 Toshiba Corporation
1
2015-04
2016-04-13
Rev.3.0
TLP2310
4. Packaging and Pin Assignment
1: Anode
3: Cathode
4: GND
5: V
O
(Output)
6: V
DD
11-4L1S
5. Internal Circuit (Note)
Note:
A 0.1-µF bypass capacitor must be connected between pin 6 and pin 4.
6. Principle of Operation
6.1. Truth Table
Input
H
L
LED
ON
OFF
Output
H
L
6.2. Mechanical Parameters
Characteristics
Creepage distances
Clearance distances
Internal isolation thickness
Dimension(Min)
5.0
5.0
0.4
Unit
mm
©2016 Toshiba Corporation
2
2016-04-13
Rev.3.0
TLP2310
7. Absolute Maximum Ratings (Note)
(Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward current
Input forward current (pulsed)
Input forward current derating
(pulsed)
Peak transient input forward
current
Peak transient input forward
current derating
Input power dissipation
Input power dissipation
derating
Input reverse voltage
Detector Output current
Output voltage
Supply voltage
Output power dissipation
Output power dissipation
derating
Common Operating temperature
Storage temperature
Lead soldering temperature
Isolation voltage
(10 s)
(AC, 60 s, R.H.
≤
60 % )
(T
a
≥
110
)
(T
a
≥
110
)
(T
a
≥
110
)
(T
a
≥
110
)
Symbol
I
F
I
FP
∆I
FP
/∆T
a
I
FPT
∆I
FPT
/∆T
a
P
D
∆P
D
/∆T
a
V
R
I
O
V
O
V
DD
P
O
∆P
O
/∆T
a
T
opr
T
stg
T
sol
BV
S
(Note 2)
(Note 1)
Note
Rating
8
40
-1
1
-25
20
-0.5
5
10
6
6
20
-0.5
-40 to 125
-55 to 125
260
3750
Unit
mA
mA
mA/
A
mA/
mW
mW/
V
mA
V
V
mW
mW/
Vrms
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW)
≤
1
µs,
300 pps
Note 2: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are
shorted together.
8. Recommended Operating Conditions (Note)
Characteristics
Input on-state current
Input off-state voltage
Supply voltage
Operating temperature
Symbol
I
F(ON)
V
F(OFF)
V
DD
T
opr
Note
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Min
2
0
2.7
-40
Typ.
3.3 / 5
Max
6
0.8
5.5
125
Unit
mA
V
V
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this datasheet should also be considered.
Note: A ceramic capacitor (0.1
µF)
should be connected between pin 6 and pin 4 to stabilize the operation of a high-
gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be
placed within 1 cm of each pin.
Note 1: The rise and fall times of the input on-current should be less than 0.5
µs.
Note 2: Denotes the operating range, not the recommended operating condition.
Note:
©2016 Toshiba Corporation
3
2016-04-13
Rev.3.0
TLP2310
9. Electrical Characteristics (Note)
(Unless otherwise specified, T
a
= -40 to 125
, V
DD
= 2.7 to 5.5 V)
Characteristics
Input forward voltage
Input forward voltage
temperature coefficient
Input reverse current
Input capacitance
Low-level output voltage
High-level output voltage
Low-level supply current
High-level supply current
Threshold input current (L/H)
Symbol
V
F
∆V
F
/∆T
a
I
R
C
t
V
OL
V
OH
I
DDL
I
DDH
I
FLH
Fig.
12.1.1
Fig.
12.1.2
Fig.
12.1.3
Fig.
12.1.4
Test
Circuit
Test Condition
I
F
= 2 mA
I
F
= 2 mA, T
a
= 25
I
F
= 2 mA
V
R
= 5 V, T
a
= 25
V = 0 V, f = 1 MHz , T
a
= 25
I
O
= 20
µA,
V
F
= 0.8 V
I
O
= 3.2 mA, V
F
= 0.8 V
I
O
= -20
µA,
I
F
= 2 mA
I
O
= -3.2 mA, I
F
= 2 mA
I
F
= 0 mA
I
F
= 2 mA
I
O
= -3.2 mA, V
O
> V
DD
- 1V
Min
1.2
1.4
V
DD
- 0.1
V
DD
- 1.0
Typ.
1.53
-1.58
20
V
DD
- 0.01
V
DD
- 0.25
Max
1.9
1.7
10
0.1
0.4
0.3
0.3
1.0
mA
mV/
µA
pF
V
Unit
V
Note:
All typical values are at V
DD
= 5 V, T
a
= 25
,
unless otherwise noted.
10. Isolation Characteristics
(Unless otherwise specified, T
a
= 25
)
Characteristics
Total capacitance (input to
output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Condition
Min
1
×
10
12
3750
Typ.
0.8
10
14
10000
10000
Max
Vdc
Unit
pF
Ω
Vrms
(Note 1) V
S
= 0 V, f = 1 MHz
(Note 1) V
S
= 500 V, R.H.
≤
60 %
(Note 1) AC, 60 s
AC, 1s, in oil
DC, 60 s, in oil
Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are
shorted together.
©2016 Toshiba Corporation
4
2016-04-13
Rev.3.0
TLP2310
11. Switching Characteristics (Note)
(Unless otherwise specified, T
a
= -40 to 125
, V
DD
= 2.7 to 5.5 V)
Characteristics
Propagation delay time
(L/H)
Propagation delay time
(H/L)
Pulse width distortion
Propagation delay skew
(device to device)
Propagation delay time
(L/H)
Propagation delay time
(H/L)
Pulse width distortion
Propagation delay skew
(device to device)
Propagation delay time
(L/H)
Propagation delay time
(H/L)
Pulse width distortion
Propagation delay skew
(device to device)
Rise time
Fall time
Common-mode transient
immunity at output high
Common-mode transient
immunity at output low
Symbol
t
pLH
t
pHL
|t
pHL
-t
pLH
|
t
psk
t
pLH
t
pHL
|t
pHL
-t
pLH
|
t
psk
t
pLH
t
pHL
|t
pHL
-t
pLH
|
t
psk
t
r
t
f
CM
H
CM
L
Fig.
12.1.7
(Note 1),
(Note 2)
(Note 1)
Fig.
12.1.5
V
IN
= 0
→
3.3 V, R
T
= 820
Ω,
V
DD
= 5 V
V
IN
= 3.3
→
0 V, R
T
= 820
Ω,
V
DD
= 5 V
V
IN
= 3.3 V / 5 V,
V
DD
= 3.3 V / 5 V,
V
CM
= 1000 V
p-p
, T
a
= 25
(Note 1),
(Note 2)
(Note 1)
Fig.
12.1.6
I
F
= 2 mA, R = 100
Ω
(Note 1),
(Note 2)
(Note 1)
V
IN
= 5 V, R
T
= 1.6 kΩ
Note
(Note 1)
Test
Circuit
Fig.
12.1.5
Test Condition
V
IN
= 3.3 V, R
T
= 820
Ω
Min
80
60
-65
80
60
-65
80
60
-65
±25
Typ.
11
13
±40
Max
250
250
50
65
250
250
50
65
250
250
30
65
kV/µs
Unit
ns
All typical values are at V
DD
= 5 V, T
a
= 25
,
unless otherwise noted.
Recommendation input resistance conditions
V
IN
= 3.3 V : R
1
= R
2
= 430
Ω
V
IN
= 5 V : R
1
= R
2
= 820
Ω
Note 1: f = 250 kHz, duty = 50 %, input current t
r
= t
f
= 5 ns, C
L
is approximately 15 pF which includes probe and stray
wiring capacitance.
Note 2: The propagation delay skew, t
psk
, is equal to the magnitude of the worst-case difference in t
pHL
and/or t
pLH
that will be seen between units at the same given conditions (supply voltage, input current, temperature, etc).
Note:
Note:
©2016 Toshiba Corporation
5
2016-04-13
Rev.3.0
