TLP2704
Photocouplers
GaAℓAs Infrared LED & Photo IC
TLP2704
1. Applications
•
•
•
Intelligent Power Module Signal Isolation
Factory Automation (FA)
Industrial Inverters
2. General
The TLP2704 consists of a GaAℓAs light-emitting diode optically coupled with an integrated high-gain, high-
speed photodetector and is housed in the SO6L package. It supports operating temperatures of up to 125
.
The SO6L package meets the reinforced insulation class requirements of international safety standards.
The photodetector has an internal Faraday shield that provides a guaranteed common-mode transient immunity
of
±20
kV/µs.
The TLP2704 guarantees minimum and maximum of propagation delay time, pulse width distortion. Therefore
it is suitable for isolation interface between IPM and control IC circuits in motor control application.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Inverter logic type (open collector output)
Package: SO6L
Operating temperature: -40 to 125
Supply voltage: -0.5 to 30 V
Threshold input current: 5.0 mA (max)
Supply current: 1.3 mA (max)
Propagation delay time: t
pHL
= 400 ns (max), t
pLH
= 550 ns (max)
Pulse width distortion: 400 ns (max)
Common-mode transient immunity:
±20
kV/µs (min)
(10) Isolation voltage: 5000 Vrms (min)
(11) Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5, EN60065, EN60950-1, EN 62368-1 (Note 1)
Note 1: When a VDE approved type is needed, please designate the Option (D4)
(D4).
Start of commercial production
©2016-2017
Toshiba Electronic Devices & Storage Corporation
1
2015-03
2017-07-05
Rev.6.0
TLP2704
4. Packaging (Note)
TLP2704
TLP2704(LF4)
11-4N1A
11-4N101A
Note:
Lead-formed product: (LF4)
5. Pin Assignment
1: Anode
2: N.C.
3: Cathode
4: GND
5: V
O
(Output)
6: V
CC
6. Internal Circuit (Note)
Note:
A 0.1-µF bypass capacitor must be connected between pin 6 and pin 4.
©2016-2017
Toshiba Electronic Devices & Storage Corporation
2
2017-07-05
Rev.6.0
TLP2704
7. Principle of Operation
7.1. Truth Table
Input
H
L
LED
ON
OFF
Output
L
H
7.2. Mechanical Parameters
Characteristics
Creepage distances
Clearance distances
Internal isolation thickness
Min
8.0
8.0
0.4
Unit
mm
8. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward current
Input forward current derating
Input forward current (pulsed)
Input forward current derating
(pulsed)
Peak transient input forward
current
Peak transient input forward
current derating
Input power dissipation
Input power dissipation
derating
Input reverse voltage
Detector Output current
Output current derating
Output voltage
Supply voltage
Output power dissipation
Output power dissipation
derating
Common Operating temperature
Storage temperature
Lead soldering temperature
Isolation voltage
(10 s)
AC, 60 s, R.H.
≤
60 %
(T
a
≥
110
)
(T
a
≥
110
)
(T
a
≥
110
)
(T
a
≥
110
)
(T
a
≥
110
)
(T
a
≥
116
)
Symbol
I
F
∆I
F
/∆T
a
I
FP
∆I
FP
/∆T
a
I
FPT
∆I
FPT
/∆T
a
P
D
∆P
D
/∆T
a
V
R
I
O
∆I
O
/∆T
a
V
O
V
CC
P
O
∆P
O
/∆T
a
T
opr
T
stg
T
sol
BV
S
(Note 3)
(Note 2)
(Note 1)
Note
Rating
20
-0.6
50
-1.25
1
-25
40
-1.0
5
15
0.38
-0.5 to 30
-0.5 to 30
80
-2.0
-40 to 125
-55 to 125
260
5000
Vrms
mW
mW/
Unit
mA
mA/
mA
mA/
A
mA/
mW
mW/
V
mA
mA/
V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW)
≤
1 ms, duty = 50 %
Note 2: Pulse width (PW)
≤
1
µs,
300 pps
Note 3: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6
are shorted together.
Note:
©2016-2017
Toshiba Electronic Devices & Storage Corporation
3
2017-07-05
Rev.6.0
TLP2704
9. Recommended Operating Conditions (Note)
Characteristics
Input on-state current
Input off-state voltage
Supply voltage
Operating temperature
Symbol
I
F(ON)
V
F(OFF)
V
CC
T
opr
(Note 2)
(Note 2)
Note
(Note 1)
Min
7.5
0
4.5
-40
Typ.
Max
15
0.8
30
125
Unit
mA
V
V
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
Note : A ceramic capacitor (0.1
µF)
should be connected between pin 6 and pin 4 to stabilize the operation of a high-
gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be
placed within 1 cm of each pin.
Note 1: The rise and fall times of the input on-current should be less than 0.5
µs.
Note 2: Denotes the operating range, not the recommended operating condition.
Note:
10. Electrical Characteristics (Note)
(Unless otherwise specified, T
a
= -40 to 125
, V
CC
= 4.5 to 30 V)
Characteristics
Input forward voltage
Input forward voltage
temperature coefficient
Input reverse current
Input capacitance
High-level output current
Low-level output voltage
High-level supply current
Low-level supply current
Output current
Threshold input current (H/L)
Threshold input voltage (L/H)
Symbol
V
F
∆V
F
/∆T
a
I
R
C
t
I
OH
V
OL
I
CCH
I
CCL
I
O
I
FHL
V
FLH
Note Test Circuit
Test Condition
I
F
= 10 mA, T
a
= 25
I
F
= 10 mA
V
R
= 5 V, T
a
= 25
V = 0 V, f = 1 MHz
Min
1.45
4.0
0.8
Typ.
1.55
-1.8
60
Max
1.7
10
50
0.6
1.3
1.3
5.0
V
Unit
V
mV/
µA
pF
µA
V
mA
Fig.13.1.1 V
F
= 0.8 V, V
O
< V
CC
Fig.13.1.2 I
F
= 10 mA, I
O
= 2.4 mA
Fig.13.1.3 I
F
= 0 mA
Fig.13.1.4 I
F
= 10 mA
Fig.13.1.5 I
F
= 10 mA, V
O
= 0.6 V
I
O
= 0.75 mA, V
O
< 0.8 V
I
O
= 0.75 mA, V
O
> 2.0 V
Note:
All typical values are at T
a
= 25
.
11. Isolation Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Total capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Condition
Min
1
×
10
12
5000
Typ.
0.8
10
14
10000
10000
Max
Vdc
Unit
pF
Ω
Vrms
(Note 1) V
S
= 0 V, f = 1 MHz
(Note 1) V
S
= 500 V, R.H.
≤
60 %
(Note 1) AC, 60 s
AC, 1 s in oil
DC, 60 s in oil
Note 1: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6
are shorted together.
©2016-2017
Toshiba Electronic Devices & Storage Corporation
4
2017-07-05
Rev.6.0
TLP2704
12. Switching Characteristics (Note)
(Unless otherwise specified, T
a
= -40 to 125
, V
CC
= 15 V)
Characteristics
Propagation delay time (H/L)
Symbol
t
pHL
Note
(Note 1)
Test
Circuit
Test Condition
Min
30
150
-50
Fig.13.1.7 V
CM
= 1500 V
p-p
, I
F
= 0 mA,
R
L
= 20 kΩ, T
a
= 25
,
C
L
= 10 pF or 100 pF
V
CM
= 1500 V
p-p
, I
F
= 10 mA,
R
L
= 20 kΩ, T
a
= 25
,
C
L
= 10 pF or 100 pF
±20
Typ.
150
70
350
110
±25
Max
400
550
400
450
kV/µs
Unit
ns
Fig.13.1.6 I
F
= 0
→
10 mA, R
L
= 20 kΩ,
C
L
= 100 pF
I
F
= 0
→
10 mA, R
L
= 20 kΩ,
C
L
= 10 pF
Propagation delay time (L/H)
t
pLH
(Note 1)
I
F
= 10
→
0 mA, R
L
= 20 kΩ,
C
L
= 100 pF
I
F
= 10
→
0 mA, R
L
= 20 kΩ,
C
L
= 10 pF
Pulse width distortion
Propagation delay skew
(device to device)
Common-mode transient
immunity at output high
Common-mode transient
immunity at output low
|t
pHL
-
t
pLH
|
t
psk
CM
H
(Note 1)
(Note 1),
(Note 2)
I
F
= 10 mA, R
L
= 20 kΩ,
C
L
= 100 pF
CM
L
±20
±25
Note: All typical values are at T
a
= 25
.
Note 1: Input signal (f = 10 kHz, duty = 10 %, input current t
r
= t
f
= 5 ns or less )
Note 2: The propagation delay skew, t
psk
, is defined as the propagation delay time of the largest or smallest t
pLH
minus
the largest or smallest t
pHL
of multiple samples. Evaluations of these samples are conducted under identical
test conditions (supply voltage, input current, temperature, etc).
©2016-2017
Toshiba Electronic Devices & Storage Corporation
5
2017-07-05
Rev.6.0
