TLP2766A
Photocouplers
GaAℓAs Infrared LED & Photo IC
TLP2766A
1. Applications
•
•
•
Factory Automation (FA)
Programmable Logic Controllers (PLCs)
High-Speed Digital Interfacing for Instrumentation and Control Devices
2. General
The TLP2766A consists of a high-output GaAℓAs light-emitting diode coupled with a high-gain, high-speed photo
detector. It is housed in the SO6L package.
This product can be mounted on the same land-pattern with Toshiba's SDIP6 packages.
In addition, the SO6L packages has a maximum height of 2.3 mm, which is approximately 45 % thinner than the
conventional SDIP6 packages. Its low profile package contributes to system size reduction and can be placed in
height-restricted locations, such as the back of a board.
Also, since TLP2766A guarantees high Isolation Voltage of 5 kVrms (min), this product satisfies the reinforced
insulation class according to international safety standards.
The detector has a totem-pole output stage with current sourcing and sinking capabilities.
The TLP2766A has an internal Faraday shield that provides a guaranteed common-mode transient immunity of
±20
kV/µs.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
Inverter logic type (Totem pole output)
Package: SO6L
Operating temperature: -40 to 125
Supply voltage: 2.7 to 5.5 V
Data transfer rate: 20 MBd (typ.) (NRZ)
Threshold input current: 3.5 mA (max)
Supply current: 3 mA (max)
Propagation delay time: 55 ns (max)
Pulse width distortion: 30 ns (max)
(10) Common-mode transient immunity:
±20
kV/µs (min)
(11) Isolation voltage: 5000 Vrms (min)
(12) Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Pending) (Note 1)
CQC-approved: GB4943.1, GB8898 Japan Factory (Pending)
Note 1: When a VDE approved type is needed, please designate the Option (D4)
(D4).
Start of commercial production
©2018
Toshiba Electronic Devices & Storage Corporation
1
2018-05
2018-05-22
Rev.1.0
TLP2766A
4. Packaging (Note)
TLP2766A
TLP2766A(LF4)
11-4N1A
11-4N101A
Note:
Lead-formed product: (LF4)
5. Pin Assignment
1: Anode
2: N.C.
3: Cathode
4: GND
5: V
O
(Output)
6: V
CC
6. Internal Circuit (Note)
Note:
A 0.1-µF bypass capacitor must be connected between pin 6 and pin 4.
©2018
Toshiba Electronic Devices & Storage Corporation
2
2018-05-22
Rev.1.0
TLP2766A
7. Principle of Operation
7.1. Truth Table
Input
H
L
LED
ON
OFF
Output
L
H
7.2. Mechanical Parameters
Characteristics
Creepage distances
Clearance distances
Internal isolation thickness
Min
8.0
8.0
0.4
Unit
mm
8. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward current
Input forward current derating
Input forward current (pulsed)
Input forward current derating (pulsed)
Peak transient input forward current
Peak transient input forward current
derating
Input power dissipation
Input power dissipation derating
Input reverse voltage
Detector Output current
Output voltage
Supply voltage
Output power dissipation
Output power dissipation derating
Common Operating temperature
Storage temperature
Lead soldering temperature
Isolation voltage
(10 s)
(AC, 60 s, R.H.
≤
60 %)
(T
a
≥
110
)
(T
a
≥
110
)
(T
a
≥
110
)
(T
a
≥
110
)
(T
a
≥
110
)
Symbol
I
F
∆I
F
/∆T
a
I
FP
∆I
FP
/∆T
a
I
FPT
∆I
FPT
/∆T
a
P
D
∆P
D
/∆T
a
V
R
I
O
V
O
V
CC
P
O
∆P
O
/∆T
a
T
opr
T
stg
T
sol
BV
S
(Note 2)
(Note 1)
Note
Rating
25
-1
40
-1.6
1
-40
40
-1.6
5
10 / -10
-0.5 to 6
-0.5 to 6
60
-2.4
-40 to 125
-55 to 125
260
5000
Vrms
mW
mW/
Unit
mA
mA/
mA
mA/
A
mA/
mW
mW/
V
mA
V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW)
≤
1
µs,
300 pps
Note 2: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6
are shorted together.
Note:
©2018
Toshiba Electronic Devices & Storage Corporation
3
2018-05-22
Rev.1.0
TLP2766A
9. Recommended Operating Conditions (Note)
Characteristics
Input on-state current
Input off-state voltage
Supply voltage
Operating temperature
Symbol
I
F(ON)
V
F(OFF)
V
CC
T
opr
(Note 2)
(Note 2)
Note
(Note 1)
Min
4.5
0
2.7
-40
Typ.
Max
15
0.8
5.5
125
Unit
mA
V
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
Note: A ceramic capacitor (0.1
µF)
should be connected between pin 6 and pin 4 to stabilize the operation of a high-
gain linear amplifier. Otherwise, this photocoupler may not switch properly. The bypass capacitor should be
placed within 1 cm of each pin.
Note 1: The rise and fall times of the input on-current should be less than 0.5
µs.
Note 2: Denotes the operating range, not the recommended operating condition.
Note:
©2018
Toshiba Electronic Devices & Storage Corporation
4
2018-05-22
Rev.1.0
TLP2766A
10. Electrical Characteristics (Note)
(Unless otherwise specified, T
a
= -40 to 125
, V
CC
= 2.7 to 5.5 V)
Characteristics
Input forward voltage
Input forward voltage
temperature
coefficient
Input reverse current
Input capacitance
High-level output
voltage
High-level output
voltage
Low-level output
voltage
Low-level supply
current
High-level supply
current
Threshold input
current (H/L)
Threshold input
voltage (L/H)
V
OL
I
CCL
I
CCH
I
FHL
V
FLH
Fig.
14.1.1
Fig.
14.1.3
Fig.
14.1.4
Symbol
V
F
∆V
F
/∆T
a
Test
Circuit
I
F
= 10 mA
Test Condition
I
F
= 10 mA, T
a
= 25
Min
1.4
Typ.
-1
Max
1.8
Unit
V
mV/
I
R
C
t
V
OH
Fig.
14.1.2
V
R
= 5 V, T
a
= 25
V = 0 V, f = 1 MHz, T
a
= 25
V
F
= 0.8 V, I
O
= -4 mA, V
CC
= 3.3 V
V
F
= 0.8 V, I
O
= -4 mA, V
CC
= 5 V
I
F
= 4.5 to 15 mA, I
O
= 4 mA
I
F
= 4.5 to 15 mA
V
F
= 0.8 V
I
O
= 4 mA, V
O
< 0.4 V
I
O
= -4 mA, V
O
> 2 V
2.3
4
0.8
40
3.1
4.82
0.16
2
1.8
1.25
1.46
10
0.4
3
3
3.5
µA
pF
V
mA
V
Note:
All typical values are at V
CC
= 5 V, T
a
= 25
,
unless otherwise noted.
11. Isolation Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Total capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Condition
Min
1
×
10
12
5000
Typ.
0.4
1
×
10
14
Max
Unit
pF
Ω
Vrms
(Note 1) V
S
= 0 V, f = 1 MHz
(Note 1) V
S
= 500 V, R.H.
≤
60 %
(Note 1) AC, 60 s
Note 1: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6
are shorted together.
©2018
Toshiba Electronic Devices & Storage Corporation
5
2018-05-22
Rev.1.0
