TLP557
TOSHIBA Photocoupler
GaAℓAs Ired & Photo−IC
TLP557
Transistor Inverter
Inverter for Air Conditioner
Power Transistor Base Drive
The TOSHIBA TLP557 consists of a GaAℓAs light emitting diode and an
integrated photodetector.
This unit is 8−lead DIP package.
TLP557 is suitable for base driving circuit of power transistor module up
to 20A.
External resistor needs to connect between pin 6 and pin 7.
This is for constant current driving.
Unit: mm
•
•
•
•
•
•
•
Input threshold current: I
F
=5mA(max.)
Guaranteed performance temperature range:
−30~70°C
Supply voltage: 16 V (max)
Output current: ±0.3 A (max)
Switching time (t
pLH
/ t
pHL
): 5
μs
(max)
Isolation voltage: 2500 V
rms
(min)
UL recognized: UL1577, file No. E67349
TOSHIBA
11−10C4
Weight: 0.54 g (typ.)
Pin Configuration
(top view)
Schematic
I
CC
(T
r1
) 8
I
F
2+
V
F
3 –
(Rex)
6
I
O
(T
r2
)
5
V
O2
4
5
7
V
CC
2
V
O1
3
6
7
1
8
GND
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
5 : GND
6 : V
O2
(Output)
7 : V
O1
(Rex Terminal)
8 : V
CC
Truth Table
Tr1
Input
LED
On
Off
On
Off
Tr2
Off
On
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2007-10-01
TLP557
Absolute Maximum Ratings
Characteristic
Forward current
LED
Symbol
I
F
(Note 1)
I
FPT
V
R
(T
j
)
I
O
I
OP
V
O
V
CC
V
1
−
2
V
2
−
1
(Note 2)
Po
(T
j
)
(Note 3)
P
OT
T
opr
T
stg
T
sol
(Note 4)
BV
S
Rating
25
1
5
125
+0.32 /
−
0.32
+2 /
−
0.5
16
16
1.5
5
0.5
125
0.55
−
30~70
−
55~125
Unit
mA
A
V
°C
A
A
V
V
V
V
W
°C
W
°C
°C
°C
Vrms
Peak transient forward current
Reverse voltage
Junction temperature
Output current
(f
≤
5kHz, Duty
≤
50%)
Peak output current
(P
W
≤
10μs, f
≤
5kHz)
Output voltage
Detector
Supply voltage
O
1
terminal to O
2
terminal
(pin 7
−
pin 6) voltage
O
2
terminal to O
1
terminal
(pin 6
−
pin 7) voltage
Power dissipation
Junction temperature
Total package power dissipation
Operating temperature range
Storage temperature range
Lead solder temperature (10 s)
Isolation voltage (AC, 1 min.,
R.H.≤ 60%, Ta=25°C)
260
2500
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Pulse width PW
≤
1μs, 300pps
(Note 2)
ΔP
o
/ °C=−6.7mW / °C
(Ta
≥
50°C)
(Note 3)
ΔP
OT
/ °C=−7.4mW / °C (Ta
≥
50°C)
(Note 4) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted
together.
2
2007-10-01
TLP557
Recommended Operating Conditions
Characteristic
Input current on
Input voltage off
Supply voltage
I
B1
Drive current
I
B2
Drive current
External resistance
V
CC
−
V
O2
(pin 8
−
pin 6)
ON voltage
Operating temperature
Symbol
I
F
(ON)
V
F
(OFF)
V
CC
I
O1
I
O2
Rex
V
8−6
Topr
Min.
7
0
5
―
―
2.7
2.3
−
30
Typ.
8
―
6
0.15
―
4.3
3
(I
O1
= 0.15A)
25
Max.
20
0.8
13
0.25
0.5
―
2.5
(I
O1
= 0.25A)
70
Unit
mA
V
V
A
A
Ω
V
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
(Rex is for constant current driving)
1
I
F(ON)
V
CC
8
7
V
CC
R
ex
I
O1
I
O2
V
8-6
2
V
F(OFF)
3
4
V
O2
GND
6
5
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2007-10-01
TLP557
Electrical Characteristics
(Ta =
−30
~
70°C , unless otherwise specified)
Characteristic
Input forward voltage
Temperature coefficient
of forward voltage
Input reverse current
Input capacitance
O
1
Output leakage current
O
2
Output leakage current
O
1
Output current
O
2
High level output
voltage
Symbol
V
F
ΔV
F
/
ΔTa
I
R
C
T
I
O1L
I
O2L
I
O
V
OH
Test Condition
I
F
= 5mA , Ta = 25°C
I
F
= 5mA
V
R
= 5V, Ta = 25°C
V = 0 , f = 1MHz , Ta = 25°C
V
CC
= 16V, V
O1
= 0, V
F
= 0.8V
V
CC
= 16V, V
O2
= 16V,
I
F
= 5mA
V
8−6
= 2.3V
Rex = 2.7Ω
I
F
= 5mA, Ta = 25°C
V
CC
= 6V, Rex = 2.7Ω
I
F
= 5mA
V
F
= 0.8V, Rex = 2.7Ω
I
O
= 0.25A, Ta = 25°C
V
OL
V
F
= 0.8V, Rex = 2.7Ω
I
O
= 0.5A (*1)
Ta = 25°C
V
CC
= 6V, I
F
= 5mA
Rex = 2.7Ω, Ta = 25°C
High level supply current
I
CCH
V
CC
= 6V, I
F
= 5mA, Rex = 2.7Ω
V
CC
= 16V, I
F
= 5mA, Rex = 2.7Ω
V
CC
= 6V, I
F
= 0mA
Rex = 2.7Ω, Ta = 25°C
Low level supply current
I
CCL
V
CC
= 6V, I
F
= 0mA, Rex = 2.7Ω
V
CC
= 16V, I
F
= 0mA, Rex = 2.7Ω
“Output L→H” threshold
input current
“Output H→L” threshold
input current
Input current hysterisis
Supply voltage
Capacitance (input
−
output)
Resistance (input
−
output)
I
FLH
Rex = 2.7Ω
I
O
= 0.25A
V
O2
> 3V
Rex = 2.7Ω
I
O
= 0.25A
V
O2
< 0.4V
V
CC
= 6V
V
CC
= 16V
V
CC
= 6V
V
CC
= 16V
V
CC
= 6V
V
CC
= 16V
V
CC
= 6V
V
CC
= 16V
V
CC
= 6V
V
CC
= 16V
Min.
―
―
―
―
―
―
0.22
0.22
3.5
―
―
―
―
―
―
―
―
―
―
―
―
0.8
0.8
―
5
V
S
= 0, f = 1MHz, Ta = 25°C
V
S
= 500V , Ta = 25
℃
, R.H.≤ 60%
―
5×10
10
Typ.*
1.55
−
2.0
Max.
1.7
―
10
250
200
200
0.32
0.32
―
0.4
0.4
―
―
10
13
17
17
22
25
5
5
―
―
―
16
2.0
―
Unit
V
mV / °C
μA
pF
μA
μA
A
Test
Cir
−
cuit
―
―
0.01
0.2
0.27
0.27
5.5
0.2
0.2
0.4
0.4
3.8
―
5.2
11
―
13
2.5
―
―
―
0.05
―
1.0
10
12
1
2
3
V
V
4
O
2
Low level output
voltage
5
V
mA
mA
mA
V
FHL
I
HYS
V
CC
C
S
R
S
V
mA
V
pF
Ω
V
CC
= 6V, Rex = 2.7Ω, Ta = 25°C
* All typical values are at Ta = 25°C
(*1): Duration of I
O
time
≤
100μs
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2007-10-01
TLP557
Switching Characteristics
(Ta =
−30
~
70°C unless otherwise specified)
Characteristic
Propagation delay time, L→H
Propagation delay time, H→L
Output rise time
Output fall time
Common mode transient
immunity at high level
output
Common mode transient
immunity at low level
output
Symbol
tpLH
tpHL
t
r
t
f
C
MH
V
CM
= 600V, I
F
= 8mA
V
CC
= 6V, Rex = 270Ω
R = 1kΩ, Ta = 25°C
V
CM
= 600V, I
F
= 0mA
V
CC
= 6V, Rex = 270Ω
R = 1kΩ, Ta = 25°C
V
CC
= 6V, I
F
= 8mA
Rex = 2.7Ω
f = 5kHz, Duty = 10%
Test Condition
Min.
―
―
―
―
−
2000
Typ.*
1
1
0.05
0.05
―
Max.
5
5
―
―
―
Unit
μs
μs
μs
μs
V /
μs
Test
Cir
−
cuit
6
7
C
ML
2000
―
―
V /
μs
7
* All typical values are at Ta = 25°C.
Test Circuit 1: I
O1L
1
V
F
4
8
V
CC
I
O1L
V
F
Test Circuit 5: V
OL
1
8
R
ex
V
CC
I
O
A
4
V
V
OL
Test Circuit 2: I
O2L
1
I
F
4
8
Test Circuit 6: t
pLH
, t
pHL
, t
r
, t
f
I
F
V
CC
I
O2L
100
Ω
R
ex
I
O
47μF
I
F
V
CC
I
O
t
r
t
f
t
pLH
t
pHL
90%
10%
I
O
GND
A
Test Circuit 3: I
O
1
I
F
4
R
ex
I
O
V
CC
A
V
8-6
A
Test Circuit 7: C
MH,
C
ML
SW
B
4
I
F
1
8
R
ex
V
O2
R
V
CC
Test Circuit 4: V
OH
1
I
F
4
8
R
ex
V V
OH
V
CC
+
V
CM
V
CM
-
10%
90%
t
r
t
f
600V
480(V)
t
r
(μs)
480(V)
C
MH =
t
f
(μs)
C
ML =
3.5V
C
MH
C
HL
SW : A(I
F
=8mA)
0.8V
V
O2
SW : B(I
F
=0)
C
ML
(C
MH
) is the maximum rate of rise (fall) of the
common mode voltage that can be
sustained with the
output voltage in the low (high) state.
5
2007-10-01
