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TLP621-1GBG

Transistor Output Optocoupler, 1-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC, DIP-4

器件类别:光电子/LED    光电   

厂商名称:Isocom Components

厂商官网:http://www.isocom.com/

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器件参数
参数名称
属性值
包装说明
ROHS COMPLIANT, PLASTIC, DIP-4
Reach Compliance Code
compliant
其他特性
UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min
55 V
配置
SINGLE
标称电流传输比
100%
最大暗电源
100 nA
最大正向电流
0.05 A
最大绝缘电压
5300 V
元件数量
1
最高工作温度
100 °C
最低工作温度
-55 °C
光电设备类型
TRANSISTOR OUTPUT OPTOCOUPLER
Base Number Matches
1
文档预览
TLP621-1, TLP621-2, TLP621-4
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
UL recognised, File No. E91231
TLP621-1
2.54
7.0
6.0
1
2
Dimensions in mm
4
3
DESCRIPTION
The TLP621-1 , TLP621-2 , TLP621-4 series of
optically coupled isolators consist of infrared light
emitting diodes and NPN silicon photo transistors
in space efficient dual in line plastic packages.
1.2
5.08
4.08
4.0
3.0
0.5
0.5
2.54
7.0
6.0
1.2
10.16
9.16
3.35
1
7.62
13°
Max
FEATURES
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Current Transfer Ratio ( 50% min)
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
High BV
CEO
( 55Vmin )
All electrical parameters 100% tested
Custom electrical selections available
APPLICATIONS
Computer terminals
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
3.0
0.26
TLP621-2
2
3
4
8
7
6
5
4.0
3.0
0.5
7.62
13°
Max
16
15
14
12
3.0
0.5
3.35
0.26
1
2
TLP621-4
2.54
7.0
6.0
1.2
20.32
19.32
3
4
6
13
5
11
SURFACE MOUNT
OPTION SM
OPTION G
7.62
7
8
7.62
0.5
10
9
10.46
9.86
0.6
0.1
1.25
0.75
0.26
10.16
3.0
0.5 3.35
4.0
3.0
13°
Max
0.26
ISOCOMCOMPONENTSLTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
1/12/09
DB92652
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
5V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
(derate linearly 2.67mW/°C above 25°C)
55V
6V
150mW
200mW
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
Reverse Voltage (V
R
)
Reverse Current (I
R
)
MIN TYP MAX UNITS
1.0
5
1.15
1.3
10
V
V
μA
V
V
nA
TEST CONDITION
I
F
= 10mA
I
R
= 10μA
V
R
= 5V
I
C
= 0.5mA
I
E
= 100μA
V
CE
= 24V
5mA I
F
, 5V V
CE
1mA I
F
, 0.4V V
CE
8mA I
F
, 2.4mA I
C
1mA I
F
, 0.2mA I
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CC
=10V ,
I
C
= 2mA, R
L
= 100Ω
Output
Collector-emitter Breakdown (BV
CEO
)
55
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
6
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR) (Note 2)
TLP621-1, TLP621-2, TLP621-4
50
CTR selection available
GB
100
BL
200
GR
30
Collector-emitter Saturation VoltageV
CE (SAT)
GB
Input to Output Isolation Voltage V
ISO
5300
7500
Input-output Isolation Resistance R
ISO
5x10
10
Rise Time
tr
Fall Time
tf
Turn-on Time
ton
Turn-off Time
toff
100
Coupled
600
300
600
%
%
%
%
V
V
V
RMS
V
PK
Ω
μs
μs
μs
μs
0.4
0.4
2
3
3
3
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
1/12/09
DB92652
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
Collector Current vs. Low
Collector-emitter Voltage
25
Collector current I
C
(mA)
T
A
= 25°C
50
40
30
20
10
5
I
F
= 2mA
150
20
15
10
5
0
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
0
0.2
0.4
0.6
0.8
1.0
Collector-emitter voltage V
CE
( V )
Collector Current vs. Collector-emitter Voltage
50
50
30
Collector current I
C
(mA)
T
A
= 25°C
20
15
50
Forward current I
F
(mA)
40
30
20
10
0
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
I
F
= 5mA
I
C
= 1mA
0.24
0.20
0.16
0.12
0.08
0.04
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
10
I
F
= 5mA
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Collector-emitter saturation voltage V
CE(SAT)
(V)
Current Transfer Ratio vs. Forward Current
320
Current transfer ratio CTR (%)
280
240
200
160
120
80
40
0
1
2
5
10
20
50
Forward current I
F
(mA)
DB92652
V
CE
= 5V
T
A
= 25°C
1/12/09
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