TLP621,TLP621−2,TLP621−4
TOSHIBA Photocoupler
GaAs Ired & Photo−Transistor
TLP621,TLP621−2,TLP621−4
Programmable Controller
AC / DC−Input Module
Solid State Relay
The TOSHIBA TLP621,
−2
and
−4
consists of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode.
The TLP621−2 offers two isolated channels in an eight lead plastic DIP,
which the TLP621−4 provides four isolated channels in a sixteen plastic
DIP.
•
•
Collector−emitter voltage: 55 V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
TOSHIBA
Weight: 0.26 g (typ.)
11−5B2
Unit in mm
Pin Configurations
(top view)
TLP621
1
4
1
2
3
TLP621-2
8
1
2
3
TLP621-4
16
2
1: Anode
2: Cathode
3: Emitter
4: Collector
3
7
6
15
14
4
1, 3: Anode
2, 4: Cathode
5, 7: Emitter
6, 8: Collector
5
4
5
13
TOSHIBA
12
11
11−10C4
Weight: 0.54 g (typ.)
6
7
8
1, 3, 5, 7: Anode
2, 4, 6, 8: Cathode
9, 11, 13, 15: Emitter
10, 12, 14, 16: Collector
10
9
TOSHIBA
Weight: 1.1 g (typ.)
11−20A3
1
2007-10-01
TLP621,TLP621−2,TLP621−4
●
Current Transfer Ratio
Type
Classi−
fication
*1
(None)
Rank Y
TLP621
Rank GR
Rank BL
Rank GB
TLP621−2
TLP621−4
(None)
Rank GB
Current Transfer Ratio
(%) (I
C
/ I
F
)
I
F
= 5mA, V
CE
= 5V, Ta = 25°C
Min.
50
50
100
200
100
50
100
Max.
600
150
300
600
600
600
600
Blank, Y, Y , G, G , B, B , GB
Y, Y
■
■
■
■
■
Marking Of
Classification
G, G
B, B
■
■
■
G, G , B, B , GB
Blank, GR, BL, GB
GR, BL, GB
*1: Ex. rank GB: TLP621 (GB)
(Note) Application type name for certification test, please use standard product type name, i.e.
TLP621 (GB): TLP621
TLP621−2 (GB): TLP621−2
Made In Japan
UL recognized
BSI approved
SEMKO approved
E67349
6508, 7445
9735090 / 01
*2
*3
*4
Made In Thailand
E152349
6505, 7445
―
*2
*3
*2
*3
*4
UL1577
BS EN60065: 2002, BS EN60950-1: 2002
EN60950 (approved is TLP621 only)
2
2007-10-01
TLP621,TLP621−2,TLP621−4
•
Option (D4) type
VDE approved: DIN EN 60747-5-2, certificate no. 40009302
Maximum operating insulation voltage: 890 V
PK
Highest permissible over voltage: 8000 V
PK
(Note)
When a EN 60747-5-2 approved type is needed, please designate the “Option (D4)”
7.62 mm pich
standard type
: 6.4 mm (min.)
: 6.4 mm (min.)
: 0.4 mm (min.)
10.16 mm pich
(LF2) type
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
•
Creepage distance
Clearance
Insulation thickness
3
2007-10-01
TLP621,TLP621−2,TLP621−4
Absolute Maximum Ratings
(Ta = 25°C)
Rating
Characteristic
Forward current
Forward current derating
Pulse forward current
LED
Power dissipation
Power dissipation derating
Reverse voltage
Junction temperature
Collector−emitter voltage
Emitter−collector voltage
Detector
Collector current
Collector power dissipation
(1 circuit)
Collector power dissipation derating
(1 circuit, Ta
≥
25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
Total package power dissipation derating
(Ta
≥
25°C)
Isolation voltage
(Note 1)
Symbol
I
F
ΔI
F
/°C
I
FP
P
D
ΔP
D
/°C
V
R
T
j
V
CEO
V
ECO
I
C
P
C
ΔP
C
/°C
T
j
T
stg
T
opr
T
sol
P
T
ΔP
T
/°C
BV
S
250
−2.5
150
−1.5
125
−55~125
−55~100
260 (10 s)
150
−1.5
TLP621
60
−0.7
(Ta > 39°C)
TLP621−2
TLP621−4
50
−0.5
(Ta = 25°C)
Unit
mA
mA /°C
A
mW
mW /°C
V
°C
V
V
mA
100
−1.0
mW
mW /°C
°C
°C
°C
°C
mW
mW /°C
V
rms
1 (100μs pulse, 100pps)
100
−1.0
5
125
55
7
50
70
−0.7
5000 (AC, 1min., R.H.≤ 60%)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together.
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V
CC
I
F
I
C
T
opr
Min.
―
―
―
−25
Typ.
5
16
1
―
Max.
24
20
10
85
Unit
V
mA
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
4
2007-10-01
TLP621,TLP621−2,TLP621−4
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Collector−emitter
breakdown voltage
Detector
Emitter−collector
breakdown voltage
Collector dark current
Capacitance (collector
to emitter)
Symbol
V
F
I
R
C
T
V
(BR) CEO
V
(BR) ECO
I
CEO
C
CE
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
V
CE
= 24 V
V
CE
= 24 V, Ta = 85°C
V = 0, f = 1 MHz
Min.
1.0
—
—
55
7
—
—
—
Typ.
1.15
—
30
—
—
10
2
10
Max.
1.3
10
—
—
—
100
50
—
Unit
V
μA
pF
V
V
nA
μA
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
I
C
/ I
F
Test Condition
I
F
= 5 mA, V
CE
= 5 V
MIn.
50
Rank GB
100
—
Rank GB
30
—
—
Rank GB
—
Typ.
—
—
60
—
—
0.2
—
Max.
600
600
—
—
0.4
—
0.4
V
Unit
%
Saturated CTR
I
C
/ I
F (sat)
I
F
= 1 mA, V
CE
= 0.4 V
I
C
= 2.4 mA, I
F
= 8 mA
%
Collector−emitter
saturation voltage
V
CE (sat)
I
C
= 0.2 mA, I
F
= 1 mA
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance (input to output)
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0, f = 1 MHz
V
S
= 500 V
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min.
—
1×10
12
Typ.
0.8
10
14
Max.
—
—
—
—
—
Unit
pF
Ω
V
rms
V
dc
5000
—
—
—
10000
10000
5
2007-10-01
