TLP626, TLP626-2,TLP626-4
LOW INPUT CURRENT A.C. INPUT
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
APPROVALS
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UL recognised, File No. E91231
DESCRIPTION
The TLP626, TLP626-2, TLP626-4 series of
optically coupled isolators consist of two infrared
light emitting diodes connected in inverse parallel
and NPN silicon photo transistors in space
efficient dual in line plastic packages.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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Low input current ± 0.5mA I
F
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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AC or polarity insensitive input
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Telephone sets, Telephone exchangers
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Signal transmission between systems of
different potentials and impedances
TLP626
2.54
7.0
6.0
1.2
5.08
4.08
1
2
Dimensions in mm
4
3
7.62
4.0
3.0
0.5
13°
Max
0.26
3.0
0.5
3.35
TLP626-2
2.54
1
7.0
6.0
2
3
4
7.62
4.0
3.0
0.5
13°
Max
0.26
1
2
16
15
14
13
12
11
10
9
7.62
8
7
6
5
1.2
10.16
9.16
3.0
0.5
3.35
TLP626-4
2.54
3
4
5
7.0
6.0 6
7
8
20.32
19.32
4.0
3.0
0.5
OPTION SM
SURFACE MOUNT
OPTION G
7.62
1.2
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
3.0
0.5 3.35
13°
Max
0.26
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92549m-AAS /A1
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Power Dissipation
± 50mA
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
MIN TYP MAX UNITS
1.0
1.15
1.3
V
TEST CONDITION
I
F
= ± 10mA
55V
6V
150mW
Output
Collector-emitter Breakdown (BV
CEO
)
(
Note 2
)
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Current Transfer Ratio (CTR) (Note 2)
Low Input CTR
55
6
100
100
50
V
V
nA
I
C
= 0.5mA
I
E
= 100
µ
A
V
CE
= 24V
± 1mAI
F
, 0.5V V
CE
± 0.5mAI
F
,1.5V V
CE
± 1mAI
F
, 0.5mAI
C
± 1mAI
F
, 1mAI
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CC
= 10V ,
I
C
= 2mA, R
L
= 100
Ω
Coupled
1200 %
%
Collector-emitter Saturation VoltageV
CE (SAT)
0.2
0.4
V
V
Input to Output Isolation Voltage V
ISO
5300
7500
V
RMS
V
PK
Ω
Input-output Isolation Resistance R
ISO
5x10
10
Rise Time
Fall Time
Turn-on Time
Turn-off Time
tr
tf
ton
toff
8
8
10
8
µ
s
µ
s
µ
s
µ
s
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/12/00
DB92549m-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
200
Collector power dissipation P
C
(mW)
1.5
150
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Ambient Temperature
I
F
= ± 0.5mA
V
CE
= 1.5V
1.0
100
0.5
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Forward Current
2.8
Relative current transfer ratio
Forward current I
F
(±mA)
50
40
30
20
10
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
2.4
2.0
1.6
1.2
0.8
0.4
0
0.1
0.2
V
CE
= 1.5V
T
A
= 25°C
0.5
1.0
2
5
Forward current I
F
(±mA)
Relative Current Transfer Ratio
vs. Forward Current
2.8
Relative current transfer ratio
2.4
2.0
1.6
1.2
0.8
0.4
V
CE
= 0.5V
T
A
= 25°C
Relative current transfer ratio
I
F
= ±1mA
V
CE
= 0.5V
1.0
0.5
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
7/12/00
0
0.1
0.2
0.5
1.0
2
5
Forward current I
F
(±mA)
DB92549m-AAS/A1
