TLP631,TLP632
TOSHIBA Photocoupler
GaAs IRed & Photo−Transistor
TLP631,TLP632
Programmable Controllers
AC / DC−Input Module
Solid State Relay
The TOSHIBA TLP631 and TLP632 consist of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode in a
six lead plastic DIP.
TLP632 is no−base internal connection for high−EMI environments.
•
•
•
•
Collector−emitter voltage: 55 V (min.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Isolation voltage: 5000V
rms
(min.)
UL recognized: UL1577, file no. E67349
TOSHIBA
11−7A8
Weight: 0.4 g (typ.)
Unit in mm
Pin Configurations
(top view)
TLP631
1
2
3
6
5
4
TLP632
1
2
3
6
5
4
1: Anode
2: Cathode
3: N.C.
4: Emitter
5: Collector
6: Base
1: Anode
2: Cathode
3: N.C.
4: Emitter
5: Collector
6: N.C
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2007-10-01
TLP631,TLP632
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Forward current
Forward current derating (Ta
≥
39°C)
LED
Peak forward current (100μs pulse, 100pps)
Reverse voltage
Junction temperature
Collector−emitter voltage
Collector−base voltage (TLP631)
Emitter−collector voltage
Detector
Emitter−base voltage (TLP631)
Collector current
Power dissipation
Power dissipation derating (Ta
≥
25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10s)
Total package power dissipation
Total package power dissipation derating (Ta≥ 25°C)
Isolation voltage (AC, 1 min., R.H.
≤
60%)
Symbol
IF
ΔI
F
/ °C
I
FP
V
R
T
j
V
CEO
V
CBO
V
ECO
V
EBO
I
C
P
C
ΔP
C
/ °C
T
j
T
stg
T
opr
T
sol
P
T
ΔP
T
/ °C
BV
S
Rating
60
−0.7
1
5
125
55
80
7
7
50
150
−1.5
125
−55~125
−55~100
260
250
−2.5
5000
Unit
mA
mA / °C
A
V
°C
V
V
V
V
mA
mW
mW / °C
°C
°C
°C
°C
mW
mW / °C
V
rms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Recommended Operating Conditions
Characteristic
Supply voltage
Forward current
Collector current
Operating temperature
Symbol
V
CC
I
F
I
C
T
opr
Min.
―
―
―
−25
Typ.
5
16
1
―
Max.
24
25
10
85
Unit
V
mA
mA
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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2007-10-01
TLP631,TLP632
Individual Electrical Characteristics
(Ta = 25°C)
Characteristic
Forward voltage
LED
Reverse current
Capacitance
Collector−emitter breakdown
voltage
Emitter−collector breakdown
voltage
Detector
Collector−base breakdown
voltage
(TLP631)
Emitter−base breakdown
voltage
(TLP631)
Collector dark current
Capacitance collector to
emitter
Symbol
V
F
I
R
C
T
V
(BR) CEO
V
(BR) ECO
V
(BR) CBO
V
(BR) EBO
I
CEO
C
CE
I
F
= 10 mA
V
R
= 5V
V = 0, f = 1 MHz
I
C
= 0.5 mA
I
E
= 0.1 mA
I
C
= 0.1 mA
I
E
= 0.1 mA
V
CE
= 24 V
V
CE
= 24 V, Ta = 85°C
V = 0, f = 1 MHz
Test Condition
Min.
1.0
―
―
55
7
80
7
―
―
―
Typ.
1.15
―
30
―
―
―
―
10
2
10
Max.
1.3
10
―
―
―
―
―
100
50
―
Unit
V
μA
pF
V
V
V
V
nA
μA
pF
Coupled Electrical Characteristics
(Ta = 25°C)
Characteristic
Current transfer ratio
Symbol
I
C
/ I
F
Test Condition
I
F
= 5 mA, V
CE
= 5 V
Rank GB
I
F
= 1 mA, V
CE
= 0.4 V
Rank GB
I
C
= 2.4 mA, I
F
= 8 mA
MIn.
50
100
―
30
―
Typ.
―
―
60
―
―
Max.
600
600
―
―
0.4
Unit
%
Saturated CTR
Collector−emitter saturation
voltage
I
C
/ I
F (sat)
V
CE (sat)
%
V
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2007-10-01
TLP631,TLP632
Isolation Characteristics
(Ta = 25°C)
Characteristic
Capacitance (input to output)
Isolation resistance
Symbol
C
S
R
S
Test Condition
V
S
= 0, f = 1 MHz
V
S
= 500 V, R.H.
≤
60%
AC, 1 minute
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
Min.
―
5×10
10
Typ.
0.8
10
14
Max.
―
―
―
―
―
Unit
pF
Ω
V
rms
V
dc
5000
―
―
―
10000
10000
Switching Characteristics
(Ta = 25°C)
Characteristic
Rise time
Fall time
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn−off time
Turn−on time
Storage time
Turn−off time
Symbol
t
r
t
f
t
on
t
off
t
ON
t
s
t
OFF
t
ON
t
s
t
OFF
R
L
= 1.9 kΩ
(Fig.1)
R
BE
= OPEN
V
CC
= 5 V, I
F
= 16 mA
R
L
= 1.9 kΩ
(Fig.1)
R
BE
= 220 kΩ(TLP631)
V
CC
= 5 V, I
F
= 16 mA
V
CC
= 10 V, I
C
= 2 mA
R
L
= 100Ω
Test Condition
Min.
―
―
―
―
―
―
―
―
―
―
Typ.
2
3
3
3
2
15
25
2
12
20
Max.
―
―
―
―
―
―
―
―
―
―
μs
μs
μs
Unit
Fig. 1 Switching time test circuit
V
CC
R
L
R
BE
V
CE
V
CE
I
F
t
S
V
CC
4.5V
0.5V
t
ON
t
OFF
I
F
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2007-10-01
TLP631,TLP632
I
F
– Ta
100
200
P
C
– Ta
80
160
Allowable forward current
IF (mA)
60
Allowable collector power
dissipation PC (mW)
0
20
40
60
80
100
120
120
40
80
20
40
0
−20
0
-20
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I
FP
– D
R
5000
3000
Pulse width
≤
100μs
Ta = 25°C
100
50
30
1000
500
300
Ta = 25°C
I
F
– V
F
Pulse forward current I
FP
(mA)
(mA)
10
Forward current I
F
10
−3
−2
−1
5
3
1
0.5
0.3
100
50
30
10
3
3
10
3
10
3
10
０
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Duty cycle ratio
D
R
Forward voltage V
F
(V)
ΔV
F
/
ΔTa
– I
F
-3.2
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.1
1000
500
I
FP
– V
FP
Pulse forward current I
FP
(mA)
Forward voltage temperature
coefficient
ΔV
F/ΔTa (mV/°C)
300
100
50
30
10
5
3
Pulse width
≤
100μs
Repetitive frequency
= 100 Hz
Ta = 25°C
0.8
1.2
1.6
2.0
2.4
0.3
1
3
10
30
1
0.4
Forward current I
F
(mA)
Pulse forward voltage
V
F
(V)
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2007-10-01
