TLOU114P(F),TLSU114P(F),TLYU114P(F)
TOSHIBA InGaAℓP LED
TLOU114P(F),TLSU114P(F),TLYU114P(F)
Panel Circuit Indicator
Unit in mm
•
•
•
•
•
•
•
•
•
•
Lead(Pb)-free products (lead: Sn-Ag-Cu)
5mm package
InGaAℓP LED
Without stand−offs
All plastic mold type
Colored lusterless lens
Lineup: 3 colors (red, orange, yellow)
Suitable for high−brightness and less electricity consumption.
All plastic molded lens, provides an excellent on−off contrast ratio.
Applications: Backlight, light for decoration, switches,
various indicator, personal equipment
Lineup
Product
TLOU114P(F)
TLSU114P(F)
TLYU114P(F)
Color
Orange
Red
Yellow
Material
InGaAℓP
InGaAℓP
InGaAℓP
JEDEC
JEITA
TOSHIBA
―
―
4-6B3A
Weight: 0.31g(Typ.)
Absolute Maximum Ratings
(Ta = 25°C)
Product
TLOU114P(F)
TLSU114P(F)
TLYU114P(F)
Forward
Current
I
F
(mA)
30
30
30
Reverse
Voltage
V
R
(V)
4
4
4
Power
Dissipation
P
D
(mW)
72
72
75
Operating
Temperature
T
op
(°C)
−20~75
−20~75
−20~75
Storage
Temperature
T
stg
(°C)
−30~100
−30~100
−30~100
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-10-01
TLOU114P(F),TLSU114P(F),TLYU114P(F)
Electrical and Optical characteristics
(Ta = 25°C)
Product
λ
p
TLOU114P(F)
TLSU114P(F)
TLYU114P(F)
Unit
(612)
(636)
(590)
nm
Typ.Emission
Wavelength
Δλ
15
17
13
I
F
20
20
20
mA
Min
85
85
47.6
mcd
Luminous
Intensity
I
V
Typ.
250
250
130
Forward
Voltage
V
F
Max
2.4
2.4
2.5
V
Reverse
Current
I
R
Max
V
R
50
50
50
μA
4
4
4
V
I
F
20
20
20
mA
Typ.
2.0
2.0
2.1
I
F
20
20
20
mA
Precaution
•
•
•
Please be careful of the followings
Soldering temperature: 260°C max
Soldering time: 3s max
(Soldering portion of lead: up to 1.6mm from the body of the device)
If the lead is formed, the lead should be formed up to 1.6mm from the body of the device without forming stress
to the resin. Soldering should be performed after lead forming.
This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure
that it will not be affected by this IR light.
2
2007-10-01
TLOU114P(F),TLSU114P(F),TLYU114P(F)
TLOU114P(F)
I
F
– V
F
100
Ta = 25°C
1000
500
Ta = 25°C
I
V
– I
F
Luminous intensity IV (mcd)
50
(mA)
Forward current IF
20
10
5
200
100
50
2
1
1.6
20
10
1.8
2.0
2.2
2.4
2.6
1
2
5
10
20
50
100
Forward voltage VF
(V)
Forward current IF
(mA)
I
V
– Tc
10
5
1.0
Relative Luminous Intensity –
Wavelength
IF = 20mA
Ta = 25°C
Relative luminous intensity IV
2
Relative luminous intensity
0.8
0.6
1
0.4
0.5
0.2
0.2
0.1
−25
0
540
0
25
50
75
100
560
580
600
620
640
660
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation Pattern
Ta = 25°C
IF (mA)
40
I
F
– Ta
30
20°
30°
40°
50°
60°
70°
80°
90°
20°
30°
40°
50°
60°
70°
80°
Allowable forward current
10°
0°
10°
20
10
0
0.2
0.4
0.6
0.8
90°
1.0
0
0
20
40
60
80
100
Ambient temperature Ta (°C)
3
2007-10-01
TLOU114P(F),TLSU114P(F),TLYU114P(F)
TLSU114P(F)
I
F
– V
F
100
Ta = 25°C
500
Ta = 25°C
I
V
– I
F
Luminous intensity IV (mcd)
50
(mA)
200
100
Forward current IF
20
10
5
50
20
2
1
1.6
10
5
1.8
2.0
2.2
2.4
2.6
1
2
5
10
20
50
100
Forward voltage VF
(V)
Forward current IF
(mA)
I
V
– Tc
10
5
1.0
Relative Luminous Intensity –
Wavelength
IF = 20mA
Ta = 25°C
Relative luminous intensity IV
2
Relative luminous intensity
0.8
0.6
1.0
0.4
0.5
0.2
0.2
0.1
−25
0
560
0
25
50
75
100
580
600
620
640
660
680
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation Pattern
Ta = 25°C
40
I
F
– Ta
20°
30°
40°
50°
60°
70°
80°
90°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
IF (mA)
Allowable forward current
0.8
90°
1.0
30
20
10
0
0.2
0.4
0.6
0
0
20
40
60
80
100
Ambient temperature Ta (°C)
4
2007-10-01
TLOU114P(F),TLSU114P(F),TLYU114P(F)
TLYU114P(F)
I
F
– V
F
100
Ta = 25°C
500
Ta = 25°C
I
V
– I
F
Luminous intensity IV (mcd)
50
(mA)
200
100
Forward current IF
20
10
5
50
20
10
5
2
1
1.6
1.8
2.0
2.2
2.4
2.6
1
2
5
10
20
50
100
Forward voltage VF
(V)
Forward current IF
(mA)
I
V
– Tc
10
5
1.0
Relative Luminous Intensity –
Wavelength
IF = 20mA
Ta = 25°C
Relative luminous intensity IV
2
Relative luminous intensity
0.8
0.6
1
0.4
0.5
0.2
0.2
0.1
−25
0
540
0
25
50
75
100
560
580
600
620
640
660
Case temperature Tc (°C)
Wavelength
λ
(nm)
Radiation Pattern
Ta = 25°C
IF (mA)
40
I
F
– Ta
30
20°
30°
40°
50°
60°
70°
80°
90°
20°
30°
40°
50°
60°
70°
80°
Allowable forward current
10°
0°
10°
20
10
0
0.2
0.4
0.6
0.8
90°
1.0
0
0
20
40
60
80
100
Ambient temperature Ta (°C)
5
2007-10-01
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