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TLV2262AMJGB

DUAL OP-AMP, 1500 uV OFFSET-MAX, 0.67 MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8

器件类别:模拟混合信号IC    放大器电路   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
零件包装代码
DIP
包装说明
DIP,
针数
8
Reach Compliance Code
unknown
Is Samacsys
N
放大器类型
OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB)
0.0008 µA
标称共模抑制比
77 dB
最大输入失调电压
1500 µV
JESD-30 代码
R-GDIP-T8
长度
9.58 mm
湿度敏感等级
NOT SPECIFIED
功能数量
2
端子数量
8
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
CERAMIC, GLASS-SEALED
封装代码
DIP
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
筛选级别
MIL-STD-883
座面最大高度
5.08 mm
标称压摆率
0.55 V/us
供电电压上限
16 V
标称供电电压 (Vsup)
3 V
表面贴装
NO
技术
CMOS
温度等级
MILITARY
端子面层
NOT SPECIFIED
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
总剂量
MIL-STD-883 V
标称均一增益带宽
670 kHz
宽度
7.62 mm
Base Number Matches
1
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TLV225x, TLV225xA
Advanced LinCMOS RAIL TO RAIL
VERY LOW POWER OPERATIONAL AMPLIFIERS
SLOS185D − FEBRUARY 1997 − REVISED AUGUST 2006
D
D
D
D
Output Swing Includes Both Supply Rails
Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz
Low Input Bias Current . . . 1 pA Typ
Fully Specified for Both Single-Supply and
Split-Supply Operation
D
Very Low Power . . . 34
µA
Per Channel Typ
D
Common-Mode Input Voltage Range
Includes Negative Rail
850
µV
Max at T
A
= 25°C
D
Wide Supply Voltage Range
2.7 V to 8 V
D
Macromodel Included
D
Available in Q-Temp Automotive
HighRel Automotive Applications
Configuration Control / Print Support
Qualification to Automotive Standards
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
3
VDD = 3 V
VOH − High-Level Output Voltage − V
2.5
TA = − 40°C
2
TA = 25°C
1.5
TA = 85°C
1
TA = 125°C
0.5
D
Low Input Offset Voltage
description
The TLV2252 and TLV2254 are dual and
quadruple low-voltage operational amplifiers from
Texas Instruments. Both devices exhibit rail-to-rail
output performance for increased dynamic range
in single- or split-supply applications. The
TLV225x family consumes only 34
µA
of supply
current per channel. This micropower operation
makes them good choices for battery-powered
applications. This family is fully characterized at
3 V and 5 V and is optimized for low-voltage
applications. The noise performance has been
dramatically improved over previous generations
of CMOS amplifiers. The TLV225x has a noise
level of 19 nV/√Hz at 1kHz, four times lower than
competitive micropower solutions.
The TLV225x, exhibiting high input impedance
and low noise, are excellent for small-signal
0
conditioning for high-impedance sources, such as
600
800
0
200
400
piezoelectric transducers. Because of the micro-
| IOH | − High-Level Output Current −
µ
A
power dissipation levels combined with 3-V
Figure 1
operation, these devices work well in hand-held
monitoring and remote-sensing applications. In
addition, the rail-to-rail output feature with single or split supplies makes this family a great choice when
interfacing with analog-to-digital converters (ADCs). For precision applications, the TLV225xA family is
available and has a maximum input offset voltage of 850
µV.
The TLV2252/4 also make great upgrades to the TLV2322/4 in standard designs. They offer increased output
dynamic range, lower noise voltage, and lower input offset voltage. This enhanced feature set allows them to
be used in a wider range of applications. For applications that require higher output drive and wider input voltage
range, see the TLV2432 and TLV2442 devices. If your design requires single amplifiers, please see the
TLV2211/21/31 family. These devices are single rail-to-rail operational amplifiers in the SOT-23 package. Their
small size and low power consumption, make them ideal for high density, battery-powered equipment.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Advanced LinCMOS is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
ÁÁ
ÁÁ
Copyright
1997−2006, Texas Instruments Incorporated
On products compliant to MIL PRF 38535, all parameters are tested
unless otherwise noted. On all other products, production
processing does not necessarily include testing of all parameters.
1
SLOS185D − FEBRUARY 1997 − REVISED AUGUST 2006
TLV225x, TLV225xA
Advanced LinCMOS RAIL TO RAIL
VERY LOW POWER OPERATIONAL AMPLIFIERS
TLV2252 AVAILABLE OPTIONS
PACKAGED DEVICES
TA
VIOmax
AT 25°C
850
µV
1500
µV
850
µV
1500
µV
850
µV
1500
µV
SMALL
OUTLINE†
(D)
TLV2252AID
TLV2252ID
TLV2252AQD
TLV2252QD
CHIP
CARRIER
(FK)
TLV2252AMFK
TLV2252MFK
CERAMIC
DIP
(JG)
TLV2252AMJG
TLV2252MJG
PLASTIC
DIP
(P)
TLV2252AIP
TLV2252IP
TSSOP‡
(PW)
TLV2252AIPWLE
CERAMIC
FLATPACK
(U)
TLV2252AMU
TLV2252MU
−40°C to 125°C
−40°C to 125°C
−55°C to 125°C
† The D packages are available taped and reeled. Add R suffix to device type (e.g., TLV2252CDR).
‡ The PW package is available only left-end taped and reeled.
§ Chips are tested at 25°C.
TLV2254 AVAILABLE OPTIONS
PACKAGED DEVICES
TA
VIOmax
AT 25°C
850
µV
1500
µV
850
µV
1500
µV
850
µV
1500
µV
SMALL
OUTLINE†
(D)
TLV2254AID
TLV2254ID
TLV2254AQD
TLV2254QD
CHIP
CARRIER
(FK)
TLV2254AMFK
TLV2254MFK
CERAMIC
DIP
(J)
TLV2254AMJ
TLV2254MJ
PLASTIC
DIP
(N)
TLV2254AIN
TLV2254IN
TSSOP‡
(PW)
TLV2254AIPWLE
CERAMIC
FLATPACK
(W)
TLV2254AMW
TLV2254MW
−40°C to 125°C
−40°C to 125°C
−55°C to 125°C
† The D packages are available taped and reeled. Add R suffix to device type (e.g., TLV2254CDR).
‡ The PW package is available only left-end taped and reeled.
§ Chips are tested at 25°C.
2
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
TLV225x, TLV225xA
Advanced LinCMOS RAIL TO RAIL
VERY LOW POWER OPERATIONAL AMPLIFIERS
SLOS185D − FEBRUARY 1997 − REVISED AUGUST 2006
TLV2252I, TLV2252AI
TLV2252Q, TLV2252AQ
D, P, OR PW PACKAGE
(TOP VIEW)
TLV2254I, TLV2254AI, TLV2254Q, TLV2254AQ . . . D OR N PACKAGE
TLV2254M, TLV2254AM . . . J OR W PACKAGE
(TOP VIEW)
1OUT
1IN −
1IN +
V
DD −
/GND
1
2
3
4
8
7
6
5
V
DD +
2OUT
2IN −
2IN +
TLV2252M, TLV2252AM . . . JG PACKAGE
(TOP VIEW)
1OUT
1IN −
1IN +
V
DD +
2IN +
2IN −
2OUT
1
2
3
4
5
6
7
14
13
12
11
10
9
8
4OUT
4IN −
4IN +
V
DD −
/ GND
3IN +
3IN −
3OUT
1OUT
1IN −
1IN +
V
DD −
/GND
1
2
3
4
8
7
6
5
V
DD +
2OUT
2IN −
2IN +
TLV2254I, TLV2254AI . . . PW PACKAGE
(TOP VIEW)
TLV2252M, TLV2252AM . . . U PACKAGE
(TOP VIEW)
NC
1OUT
1IN −
1IN +
V
CC −
/GND
1
2
3
4
5
10
9
8
7
6
NC
V
CC
+
2OUT
2IN −
2IN +
1OUT
1IN −
1IN +
V
DD+
2IN +
2IN −
2OUT
1
14
7
8
4OUT
4IN −
4IN +
V
DD −
/ GND
3IN +
3IN −
3OUT
TLV2252M, TLV2252AM . . . FK PACKAGE
(TOP VIEW)
TLV2254M, TLV2254AM . . . FK PACKAGE
(TOP VIEW)
NC
1IN −
NC
1IN +
NC
4
5
6
7
8
3 2 1 20 19
18
17
16
15
14
9 10 11 12 13
NC
2OUT
NC
2IN −
NC
1IN+
NC
V
DD+
NC
2IN+
4
5
6
7
8
3 2 1 20 19
18
17
16
15
14
9 10 11 12 13
1IN −
1OUT
NC
4OUT
4IN −
4IN+
NC
V
DD −
/ GND
NC
3IN+
2IN −
2OUT
NC
VDD− /GND
NC
1OUT
NC
VDD+
NC
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
NC
3OUT
3IN −
NC
2IN+
NC
3
SLOS185D − FEBRUARY 1997 − REVISED AUGUST 2006
TLV225x, TLV2252xA
Advanced LinCMOS RAIL TO RAIL
VERY LOW POWER OPERATIONAL AMPLIFIERS
4
VDD +
Q3
Q6
Q9
Q12
Q14
Q16
R6
C1
R5
Q4
Q13
Q15
Q17
OUT
D1
Q2
R3
R4
Q5
Q7
Q8
Q10
Q11
R1
R2
VDD −/ GND
ACTUAL DEVICE COMPONENT COUNT†
COMPONENT
Transistors
Resistors
Diodes
Capacitors
TLV2252
38
30
9
3
TLV2254
76
56
18
6
† Includes both amplifiers and all ESD, bias, and trim circuitry
equivalent schematic (each amplifier)
IN +
Template Release Date: 7−11−94
IN −
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
Q1
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