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TMG8C60H

TRIAC(Surface Mount Device/Non-isolated)

厂商名称:SanRex

厂商官网:http://www.ecomallbiz.com/sanrex

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TRIAC
(Surface Mount Device / Non-isolated)
TMG8C60H
Triac
TMG8C60H
is designed for full wave AC control applications.
It can be used as an ON/OFF function or for phase control operation.
Typical Applications
(0.9)
TO-263
(7.0)
(4.0)
9.2 
0.3
±
1.4 
0.5
±
2.36 
0.15
±
Home Appliances : Washing Machines, Vacuum Cleaners, Rice Cookers, Micro
Wave Ovens, Hair Dryers, other control applications
Industrial Use
: SMPS, Copier Machines, Motor Controls, Dimmer, SSR,
Heater Controls, Vending Machines, other control
applications
10 
0.3
±
(0.4)
(6.91)
2
4.5 
0.2
±
1.3 
0.2
±
RO
.4
5)
2
10.4 
0.3
±
1
2
3
1
2.4 
0.2
±
Features
4.9 
0.5
±
3
1.27 
0.2
±
I
T(RMS)
=8A
High Surge Current
Low Voltage Drop
Lead-Free Package
2.54 
0.15
±
0.8 
0.15
±
2.54 
0.25
±
5.08 
0.5
±
0.5 
0.15
±
2.5 
0.2
±
2
1 T1
2 T2
3 Gate
Identifying Code:T8C6H
Unit:
mm
■Maximum
Ratings
Symbol
V
DRM
I
T RMS)
I
TSM
I
2
t
P
GM
(AV)
P
G
I
GM
V
GM
Tj
Tstg
Item
Repetitive Peak Off-State Voltage
R.M.S. On-State Current
Surge On-State Current
I
2
t(for fusing)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Mass
Reference
(Tj=25℃
unless otherwise specified)
Tc=105℃
One cycle, 50Hz/60Hz, Peak value non-repetitive
Ratings
600
8
80
/
88
32
5
0.5
2
10
−40∼+125
−40∼+150
1.2
Unit
V
A
A
A
2
S
W
W
A
V
g
■Electrical
Characteristics
Symbol
I
DRM
V
TM
I
GT1
I
GT1
I
GT3
I
GT3
V
GT1
V
GT1
V
GT3
V
GT3
V
GD
〔dv
/
dt〕
c
I
H
Rth
Item
Repetitive Peak Off-State Current
Peak On-State Voltage
1
2
Gate Trigger Current
3
4
1
2
Gate Trigger Voltage
3
4
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
Reference
V
D
=V
DRM
, Single phase, half wave, Tj=125℃
I
T
=12A,
Inst. measurement
V
D
=6V,R
L
=10Ω
Tj=125℃,V
D
1 2
V
DRM
Tj=125℃,
/
dt〕
〔di
c=−4A
/
ms,V
D
2 3
V
DRM
Junction to case
Ratings
Min. Typ. Max.
2
1.4
30
30
30
1.5
1.5
1.5
0.2
10
15
2.0
Unit
mA
V
mA
V
V
V
/
μs
mA
/
W
Holding Current
Thermal Resistance
Trigger mode of the triac
Mode
1
I
Mode
2
I
Mode
3 III
Mode
4 III )
(7.2)
TMG8C60H
10
Gate Characteristics
20
On-State Characteristics MAX)
On-State Peak Current A)
10
05
02
05
10
15
20
25
T= 5
½2 ℃
T= 2 ℃
½1 5
Gate Voltage
(V)
V
GM
(10V)
P
GM
(5W)
P
G
(0.5W)
(AV)
25℃
1
GT1
1
GT1
1
GT3
V
GD
0.2V)
01
I
GM
(2A)
10
10
00
100
00
30
35
Gate Current mA)
On-State Voltage
(V)
9
Power Dissipation
(W)
7
5
3
1
θ
θ1 0
=8゜
θ1 0
=5゜
θ1 0
=2゜
π
θ
θ9 ゜
=0
θ6 ゜
=0
30
6゜
Allowable Case Temperature
(℃)
RMS On-State vs
Maximum Power Dissipation
15
10
15
10
RMS On-State vs
Allowable Case Temperature
θ Conduction Angle
θ
=30゜
θ
=60゜
θ
=90゜
θ
30
6゜
π
θ
θ3 ゜
=0
15
θ
=120゜
θ
=150゜
θ
=180゜
θ Conduction Angle
10
RMS On-State Current
(A)
RMS On-State Current
(A)
Transient Thermal Impedance
(℃/W)
10
Surge On-State Current Rating
(Non-Repetitive)
Transient Thermal Impedance
Surge On-State Current A)
6 H
Z
5 H
Z
10
01
.
00
.1
01
.
10
Time
(Cycles)
Time
(Sec.)
10
00
50
20
10
I
GT
−Tj
(Typical)
10
00
50
20
10
V
GT
−Tj
(Typical)
I
GT
(t℃)
×100
(%)
I
GT
2 ℃)
( 5
V
GT
(t℃)
×100
(%)
V
GT
2 ℃)
( 5
V
GT1
1
V
GT1
1
V
GT3
3
I
GT1
1
I
GT1
1
I
GT3
3
−0
10
10
−0
10
10
Junction Temp. Tj
(℃)
Junction Temp. Tj
(℃)
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