MOSFET N-Channel DMOS FET Low Threshold 2.0V
厂商名称:Microchip(微芯科技)
厂商官网:https://www.microchip.com
下载文档型号 | TN0106N3-G-P003 | TN0106N3 | TN0106N3-G-P014 | TN0106N3-G |
---|---|---|---|---|
描述 | MOSFET N-Channel DMOS FET Low Threshold 2.0V | MOSFET 60V 3Ohm | MOSFET N-CH Enhancmnt Mode MOSFET | 漏源电压(Vdss):60V 连续漏极电流(Id)(25°C 时):350mA(Tj) 栅源极阈值电压:2V @ 500uA 漏源导通电阻:4.5Ω @ 250mA,4.5V 最大功率耗散(Ta=25°C):1W(Tc) 类型:N沟道 N沟道,60V;350mA;3Ω@500mA,10V |
制造商 Manufacturer |
Microchip(微芯科技) | Microchip(微芯科技) | Microchip(微芯科技) | - |
产品种类 Product Category |
MOSFET | MOSFET | MOSFET | - |
RoHS | Details | No | Details | - |
技术 Technology |
Si | Si | Si | - |
安装风格 Mounting Style |
Through Hole | Through Hole | Through Hole | - |
封装 / 箱体 Package / Case |
TO-92-3 | TO-92-3 | TO-92-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | N-Channel | - |
Vds - Drain-Source Breakdown Voltage | 60 V | 60 V | 60 V | - |
Id - Continuous Drain Current | 350 mA | 2 A | 350 mA | - |
Rds On - Drain-Source Resistance | 4.5 Ohms | 3 Ohms | 4.5 Ohms | - |
Vgs - Gate-Source Voltage | 2 V | 20 V | 20 V | - |
最小工作温度 Minimum Operating Temperature |
- 55 C | - 55 C | - 55 C | - |
最大工作温度 Maximum Operating Temperature |
+ 150 C | + 150 C | + 150 C | - |
Configuration | Single | Single | Single | - |
Channel Mode | Enhancement | Enhancement | Enhancement | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel | - |
Pd-功率耗散 Pd - Power Dissipation |
1 W | 1 W | 1 W | - |
工厂包装数量 Factory Pack Quantity |
2000 | 1000 | 2000 | - |
Typical Turn-Off Delay Time | 6 ns | 6 ns | 6 ns | - |
Typical Turn-On Delay Time | 2 ns | 2 ns | 2 ns | - |
单位重量 Unit Weight |
0.016000 oz | 0.007760 oz | 0.016000 oz | - |