TN1610H-6T
High temperature 16 A SCRs
Datasheet
−
production data
Description
Thanks to a junction temperature T
j
up to 150 °C
and a non-isolated TO-220 package, the
TN1610H-6T offers high thermal performance
operation up to 16 A rms.
The trade-off between the device’s noise
immunity (dV/dt = 1 kV/µs), its gate triggering
current (I
GT
= 10 mA) and its turn-on current rise
(dI/dt = 100 A/µs) allows the design of robust and
compact control circuits for voltage regulators in
motorbikes and industrial drives, overvoltage
crowbar protection, motor control circuits in power
tools and kitchen appliances and inrush current
limiting circuits.
Table 1. Device summary
Order code
TN1610H-6T
Package
TO-220AB
V
DRM
/V
RRM
600 V
I
GT
10 mA
Features
•
High junction temperature: T
j
= 150 °C
•
High noise immunity dV/dt = 1000 V/µs up to
150 °C
•
Gate triggering current I
GT
= 10 mA
•
Blocking voltage V
DRM
/V
RRM
= 600 V
•
High turn on current rise dI/dt: 100 A/µs
•
ECOPACK
®
2 compliant component
Applications
•
Voltage regulator circuits for motorbikes
•
Inrush current limiting circuits
•
Motor control circuits and starters
•
Light dimmers
•
Solid state relays
February 2015
This is information on a product in full production.
DocID027390 Rev 1
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www.st.com
9
Characteristics
TN1610H-6T
1
Characteristics
Table 2. Absolute ratings
Symbol
I
T(RMS)
Parameter
On-state rms current (180° conduction angle)
T
c
= 133 °C
T
c
= 133 °C
I
T(AV)
Average on-state current (180° conduction angle)
T
c
= 138 °C
T
c
= 142 °C
I
TSM
I
²
t
dI/dt
V
DRM
,
V
RRM
I
GM
P
G(AV)
T
stg
T
j
T
L
Non repetitive surge peak on-state current
(T
j
initial = 25 °C)
I
²
t value for fusing (T
j
initial = 25 °C)
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤
100 ns, T
j
= 25 °C
Repetitive peak off-state voltage
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s
t
p
= 20 µs
T
j
= 150 °C
T
j
= 150 °C
t = 8.3 ms
t = 10 ms
t
p
= 10 ms
F = 60 Hz
Value
16
10
8
6
153
A
140
98
100
600
4
1
- 40 to + 150
- 40 to + 150
260
A
²
s
A/µs
V
A
W
°C
°C
A
Unit
A
Table 3. Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
t
gt
t
q
V
D
= 12 V, R
L
= 33
Ω
V
D
= 12 V, R
L
= 33
Ω
V
D
= V
DRM
, R
L
= 3.3 kΩ
I
T
= 500 mA, gate open
I
G
= 1.2 x I
GT
V
D
= 402 V, gate open
I
T
= 32 A, V
D
= 600 V, I
G
= 100 mA,
(dI
G
/dt)max = 0.2 A/µs
V
D
= 402 V, V
R
= 25 V, I
T
= 16 A,
(dI
G
/dt)max = 30 A/µs, dV
D
/dt = 40 V/µs
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
Test conditions
Typ.
Max.
Max.
Min.
Max.
Max.
Min.
Typ
Typ
Value
4.5
mA
10
1.3
0.2
30
60
1000
1.9
70
V
V
mA
mA
V/µs
µs
µs
Unit
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TN1610H-6T
Table 4. Static characteristics
Symbol
V
TM
V
t0
R
d
I
DRM,
I
RRM
I
TM
= 32 A, t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
D
= V
DRM,
V
R
= V
RRM
Test conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
Max.
Max.
Max.
Max.
Characteristics
Value
1.6
0.82
25
5
1.5
Unit
V
V
mΩ
µA
mA
Table 5. Thermal resistance
Symbol
R
th(j-c)
R
th(j-a)
Junction to case (AC)
Junction to ambient (DC)
Parameter
Value
1.1
60
Unit
°C/W
°C/W
Figure 1. Maximum power dissipation versus
average on-state current
Figure 2. Average and DC on-state current
versus case temperature
Figure 3. Average and DC on-state current
versus ambient temperature
Figure 4. Relative variation of thermal
impedance versus pulse duration
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Characteristics
TN1610H-6T
Figure 5. Relative variation of gate triggering
current and gate voltage versus junction
temperature (typical values)
Figure 6. Relative variation of holding current
and latching current versus junction
temperature (typical values)
Figure 7. Relative variation of static dV/dt
immunity versus junction temperature (typical
values)
Figure 8. Surge peak on-state current versus
number of cycles
Figure 9. Non-repetitive surge peak on-state
current for a sinusoidal pulse (tp < 10 ms)
Figure 10. On-state characteristics
(maximum values)
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TN1610H-6T
Characteristics
Figure 11. Relative variation of leakage current versus junction temperature (tp < 10 ms)
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