TPCP8901
TOSHIBA Transistor
Silicon NPN / PNP Epitaxial Type (PCT Process)
TPCP8901
Portable Equipment Applications
Switching Applications
•
•
•
•
Small footprint due to small and thin package
High DC current gain : PNP h
FE
= 200 to 500 (I
C
=
−0.1
A)
:NPN
h
FE
= 400 to 1000 (I
C
= 0.1 A)
: NPN
High-speed switching : PNP
: NPN
V
CE (sat)
= 0.17 V (max)
S
Unit: mm
0.33±0.05
0.05
M
A
8
5
2.4±0.1
0.475
1
4
Low collector-emitter saturation : PNP V
CE (sat)
=
−0.20
V (max)
t
f
= 70 ns (typ.)
t
f
= 85 ns (typ.)
0.65
2.9±0.1
B
A
0.05
M
B
0.8±0.05
0.025
S
0.17±0.02
0.28
+0.1
-0.11
+0.13
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Single-device
operation
Single-device
value at dual
operation
Single-device
operation
Single-device
value at dual
operation
P
C
(Note 2)
0.48
T
j
T
stg
150
−55
to 150
°C
°C
P
C
(Note 2)
0.80
DC
(Note 1)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
Rating
PNP
−50
−50
−7
−0.8
−5.0
−100
1.48
W
NPN
100
50
7
1.0
5.0
100
Unit
V
V
V
A
mA
1.Emitter1
2.Base1
3.Emitter2
4.Base2
5.Collector2
6.Collector2
7.Collector1
8.Collector1
1.12
-0.12
1.12
+0.13
-0.12
0.28
+0.1
-0.11
JEDEC
JEITA
TOSHIBA
―
―
2-3V1C
Pulse (Note 1 )
Weight: 0.017 g (typ.)
Collector power
dissipation (t = 10s)
0.83
W
Collector power
dissipation (DC)
Junction temperature
Storage temperature range
Note 1: Please use devices on condition that the junction temperature is below 150℃.
Icp=±5A (@ t≦100μs)
2
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm )
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2004-01
1
2013-11-01
2.8±0.1
TPCP8901
Figure 1. Circuit configuration (top view)
Figure 2. Marking (Note 4)
8 7
6
5
Q2
8 7
6 5
Q1
8901
※
1 2 3
4
Type
1
2
3
4
Note 4:
●
on lower left on the marking indicates Pin 1.
※
Weekly code: (Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
Lot No.
(Weekly code)
Electrical Characteristics
(Ta = 25°C)
PNP
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
(1)
h
FE
(2)
V
CE (sat)
V
BE (sat)
C
ob
t
r
t
stg
t
f
Test Condition
V
CB
= −50
V, I
E
=
0
V
EB
= −7
V, I
C
=
0
I
C
= −10
mA, I
B
=
0
V
CE
= −2
V, I
C
= −0.1
A
V
CE
= −2
V, I
C
= −0.3
A
I
C
= −0.3
A, I
B
= −0.01
A
I
C
= −0.3
A, I
B
= −0.01
A
V
CB
= −10
V, I
E
=
0, f = 1MHz
See Figure 3 circuit diagram
V
CC
∼
−30
V, R
L
=
100
Ω
−
−I
B1
=
I
B2
= −10
mA
Min
⎯
⎯
−50
200
125
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
8
60
280
70
Max
−100
−100
⎯
500
⎯
−0.20
−1.10
⎯
⎯
⎯
⎯
ns
V
V
pF
Unit
nA
nA
V
NPN
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
(1)
h
FE
(2)
V
CE (sat)
V
BE (sat)
C
ob
t
r
t
stg
t
f
Test Condition
V
CB
=
100 V, I
E
=
0
V
EB
=
7 V, I
C
=
0
I
C
=
10 mA, I
B
=
0
V
CE
=
2 V, I
C
=
0.1 A
V
CE
=
2 V, I
C
=
0.3 A
I
C
=
300 mA, I
B
=
6 mA
I
C
=
300 mA, I
B
=
6 mA
V
CB
=
10 V, I
E
=
0, f = 1MHz
See Figure 4 circuit diagram
V
CC
∼
30 V, R
L
=
100
Ω
−
I
B1
= −I
B2
=
10 mA
Min
⎯
⎯
50
400
200
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
35
680
85
Max
100
100
⎯
1000
⎯
0.17
1.10
⎯
⎯
⎯
⎯
ns
V
V
pF
Unit
nA
nA
V
2
2013-11-01
TPCP8901
Figure 3. Switching Time Test Circuit & Timing Chart
20μs
I
B1
RL
Input
Output
I
B2
I
B1
I
B2
Duty cycle
＜1%
IB1
IB2
Duty cycle
＜1%
IB2
Input
IB1
Figure 4. Switching Time Test Circuit & Timing Chart
20μs
VCC
RL
Output
VCC
3
2013-11-01
TPCP8901
NPN
I
C
– V
CE
1.0
20
15
10
8
10000
h
FE
– I
C
(A)
0.8
6
4
Ta
=
100°C
I
C
h
FE
1000
−55°C
DC current gain
Collector current
0.6
2
0.4
IB
=
1 mA
25°C
100
10
Common emitter
VCE
=
2 V
Single nonrepetitive pulse
0.01
0.1
1
0.2
0
0
Common emitter
Ta
=
25°C
Single nonrepetitive pulse
0.2
0.4
0.6
0.8
1.0
1.2
1
0.001
Collector−emitter voltage
V
CE
(V)
Collector current
I
C
(A)
V
CE (sat)
– I
C
1
V
BE (sat)
– I
C
10
Common emitter
β
=
50
Single nonrepetitive pulse
Collector−emitter saturation voltage
V
CE (sat)
(V)
Base-emitter saturation voltage
V
BE (sat)
(V)
Common emitter
β
=
50
Single nonrepetitive pulse
0.1
Ta
=
100°C
1
Ta
= −55°C
−55°C
100°C
25°C
25°C
0.01
0.001
0.01
0.1
1
0.1
0.001
0.01
0.1
1
Collector current
I
C
(A)
Collector current
I
C
(A)
Safe Operation Area
10
IC max (Pulsed)
※
I
C
– V
BE
1.0
Common emitter
VCE
=
2 V
Single nonrepetitive pulse
100
μs※
IC max (Pulsed)
※
10 ms※ 1 ms※
10
μs※
(A)
(A)
0.8
I
C
1
IC max (Continuous)* 100 ms※*
10 s※*
DC operation
Ta = 25°C
Collector current
0.6
Ta
=
100°C
0.4
−55°C
Collector current
I
C
0.2
25°C
0
0
0.2
0.4
0.6
0.8
1.0
1.2
*:
Single nonrepetitive pulse
Ta
=
25°C
0.1 Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
2
).
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
0.01
0.1
1
10
VCEO max
100
Base−emitter saturation voltage
V
BE
(V)
Collector-emitter voltage
V
CE
(V)
4
2013-11-01
TPCP8901
PNP
I
C
– V
CE
1.0
−100
−50
−40
−30
10000
Common emitter
VCE
= −2
V
Single nonrepetitive pulse
h
FE
– I
C
(A)
0.8
−I
C
−15
0.6
−10
−5
0.4
−2
IB
= −1
mA
0.2
Common emitter
Ta
=
25°C
0
0
Single nonrepetitive pulse
0.2
0.4
0.6
0.8
1.0
1.2
Collector current
DC current gain
h
FE
−20
1000
Ta
=
100°C
100
25°C
−55°C
10
1
0.001
0.01
0.1
1
Collector−emitter voltage
−V
CE
(V)
Collector current
−I
C
(A)
V
CE (sat)
– I
C
10
V
BE (sat)
– I
C
10
Common emitter
β
=
30
Single nonrepetitive pulse
Collector−emitter saturation voltage
−V
CE (sat)
(V)
Common emitter
Single nonrepetitive pulse
1
0.1
Ta
=
100°C
−55°C
Base−emitter saturation voltage
−V
BE (sat)
(V)
β
=
30
1
Ta
= −55°C
0.01
25°C
100°C
25°C
0.001
0.001
0.01
0.1
1
0.1
0.001
0.01
0.1
1
Collector current
−I
C
(A)
Collector current
−I
C
(A)
Safe operation area
10
IC max (Pulse)
※
I
C
– V
BE
1.0
VCE
= −2
V
Single nonrepetitive pulse
100
μs※
IC max (Pulse)
※
10 ms※
1 ms※
10
μs※
(A)
Common emitter
(A)
0.8
−I
C
1
IC max (Continuous)*
100 ms※*
−I
C
0.6
Ta
=
100°C
0.4
−55°C
Collector current
10 s※*
*:
Single nonrepetitive pulse
Ta
=
25°C
0.1 Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
2
645 mm ).
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
0.01
0.1
1
Collector current
0.2
25°C
DC operation
Ta = 25°C
10
0
0
0.2
0.4
0.6
0.8
VCEO max
100
1.0
1.2
Base−emitter saturation voltage
−V
BE
(V)
Collector−emitter voltage
−V
CE
(V)
5
2013-11-01
