TPN3021
Tripolar overvoltage protection for network interfaces
Features
■
■
■
■
Triple crowbar protection
Low capacitance
Low holding current: I
H
= 30 mA minimum
Surge current:
I
PP
= 200 A, 2/10 µs
I
PP
= 30 A, 10/1000 µs
SO-8
Benefits
■
Trisil™ technology is not subject to ageing and
provides a fail safe mode in short circuit for a
better protection.
This device can be used to help equipment to
meet main standards such as UL1950,
IEC 950 / CSA C22.2 and UL1459.
Trisils have UL94 V0 approved resin.
SO8 package is JEDEC registered.
Trisils comply with the following standards
GR-1089 Core, ITU-T-K20/K21, VDE0433,
VDE0878, IEC 61000-4-2.
Figure 1.
Schematic diagram
Rx+ / Tx+ 1
8
NC
■
NC 2
7
NC
■
■
■
NC 3
6
GND
Rx- / Tx-
4
5
NC
Applications
Dedicated to data line protection, this device
provides a tripolar protection function. It ensures
the same protection capability with the same
breakdown voltage in both common and
differential modes.
Description
The TPN is a low capacitance transient surge
arrestor designed for protection of high debit rate
communication networks. Its low capacitance
avoids distorsion of the signal as it has been
designed for T1/E1 and Ethernet networks.
TM:
Trisil is a trademark of STMicroelectronics
June 2010
Doc ID 4143 Rev 5
1/9
www.st.com
9
Characteristics
TPN3021
1
Table 1.
Characteristics
Compliant with the following standards
Peak surge
voltage
(V)
GR-1089-CORE
First level
GR-1089-CORE
Intrabuilding
ITU-T-K20/K21
ITU-T-K20
(IEC 61000-4-2)
VDE0433
VDE0878
IEC 61000-4-5
2500
1000
1500
1000
6000
8000
4000
2000
4000
2000
2000
2000
Voltage
waveform
(µs)
2/10
10/1000
2/10
10/700
1/60 ns
10/700
1.2/50
10/700
1.2/50
Required
peak current
(A)
500
100
100
25
Current
waveform
(µs)
2/10
10/1000
2/10
5/310
Minimum
serial resistor
to meet
standard
(Ω)
7.5
25
0
0
-
-
40
0
0
0
0
0
ESD contact discharge
ESD air discharge
100
50
100
50
50
50
5/310
1/20
5/310
8/20
Table 2.
Symbol
Absolute ratings (T
amb
= 25 °C)
Parameter
10/1000
8/20
10/560
5/310
10/160
1/20
2/10
50 Hz
60 Hz
0.2 s
2s
Value
30
100
40
50
75
100
200
8
9
3
1.5
-55 to +150
-40 to +150
260
Unit
I
PP
Peak pulse current: t
r
/ t
p
A
Non repetitive surge peak on-state current One cycle
I
TSM
Non repetitive surge peak on-state current (F = 50Hz)
T
stg
T
j
T
L
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10s
A
A
°C
°C
°C
Table 3.
Symbol
R
th(j-a)
Thermal resistances
Parameter
Junction to ambient
Value
170
Unit
°C/W
2/9
Doc ID 4143 Rev 5
TPN3021
Table 4.
Symbol
V
RM
I
RM
V
R
V
BR
V
BO
I
H
I
BO
I
R
I
PP
C
Stand-off voltage
Leakage current at stand-off voltage
Continuos Reverse voltage
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Continuos reverse voltage
Peak pulse current
Capacitance
I
BO
I
R
I
H
I
RM
Characteristics
Electrical characteristics - definitions (T
amb
= 25° C)
Parameter
I
I
PP
V
V
RM
V
R
V
BR
V
BO
Table 5.
Static parameters
I
RM
max. @ V
RM
V
BO(1)
max.@ I
BO
V
38
mA
300
I
H(2)
min.
mA
30
C
(3)
typ.
pF
16
Order code
µA
TPN3021
4
V
28
1. See
Figure 6: Test circuit 1 for IBO and VBO parameters.
2. See
Figure 7: Test circuit 2 for dynamic IH parameter
3. V
R
= 0 V bias, V
RMS
= 1 V, F = 1 MHz
Figure 2.
Pulse waveform
Figure 3.
Non repetitive surge peak on-state
current versus overload duration
(T
j
initial = 25 °C)
% I
10 0
PP
ITSM(A)
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
12
10
8
6
4
2
t(s)
F=50Hz
50
0
t
r
t
p
t
0
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
Doc ID 4143 Rev 5
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Test circuits
TPN3021
Figure 4.
Variation of junction capacitance
versus reverse voltage applied
(typical values)
Figure 5.
Relative variation of holding
current versus junction
temperature
C(pF)
22
20
18
16
14
12
10
8
6
4
2
0
Tj=25°C
F=1MHz
VRMS=1V
IH[Tj] / IH[Tj=25°C]
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
VR(V)
0
5
10
15
20
25
30
Tj(°C)
-20
0
20
40
60
80
100
120
2
2.1
Test circuits
Test procedure for test circuit 1
Figure 6.
Test circuit 1 for I
BO
and V
BO
parameters
K
ton = 20ms
R1 = 140Ω
R2 = 240Ω
220V 50Hz
Vout
DUT
VBO
measurement
1/4
IBO
measurement
Pulse test duration (t
p
= 20 ms):
●
●
For bidirectional devices = switch K is closed
For unidirectional devices = switch K is open
V
OUT
selection:
Device with V
BO
< 200 V, V
OUT
= 250 V
RMS
, R1 = 140
Ω
Device with V
BO
≥
200 V, V
OUT
= 480 V
RMS
, R2 = 240
Ω
4/9
Doc ID 4143 Rev 5
TPN3021
Test circuits
2.2
Test procedure for test circuit 2
Figure 7.
Test circuit 2 for dynamic I
H
parameter
R
Surge generator
V
BAT
= - 48 V
D.U.T
This is a go no-go test, which can confirm the holding current (I
H
) level.
Procedure
1.
2.
3.
Adjust the current level at the I
H
value by short circuiting the AK of the D.U.T.
Fire the D.U.T. with a surge current I
PP
= 10A, 10/1000µs.
The D.U.T. will come back off-state within 50 ms maximum.
Doc ID 4143 Rev 5
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