TPSMP13 thru TPSMP43A
New Product
Vishay Semiconductors
formerly General Semiconductor
Surface Mount Automotive
Transient Voltage Suppressors
Case Style SMP
Breakdown Voltage
13 to 43 V
Peak Pulse Power
400W
Features
• Very low profile - typical height of 1.0mm
• Exclusive patented PAR oxide passivated chip construction
• 400W peak pulse power capability with a 10/1000µs
waveform repetition rate (duty cycle):0.01%
• Excellent clamping capability
• Low incremental surge resistance
• Very fast response time
• High temperature soldering:
260°C maximum/10 seconds at terminals
• AEC-Q101 Qualified
Cathode band
0.086 (2.18)
0.074 (1.88)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
Mechanical Data
Case:
SMP
Terminals:
Matte Tin plated (E3 Suffix),
solderable per MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.0009 oz., 0.024 g
Epoxy meets UL 94V-0 flammability rating
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.012 (0.30)
0.000 (0.00)
0.018 (0.45)
0.006 (0.15)
Mounting Pad Layout
Dimensions in inches
and (millimeters)
0.105
(2.67)
0.025
(0.635)
0.030
(0.762)
0.012 (0.30) REF
0.053 (1.35)
0.041 (1.05)
0.036 (0.91)
0.024 (0.61)
0.100
(2.54)
0.050
(1.27)
0.103 (2.60)
0.087 (2.20)
0.032 (0.80)
0.016 (0.40)
Maximum Ratings
Parameter
(T
A
= 25°C unless otherwise noted.)
Symbol
P
PPM
I
PPM
I
FSM
V
F
T
J
, T
STG
Value
Minimum 400
see table on next page
40
2.5
–65 to +185
Unit
W
A
A
V
°C
Peak power dissipation with a 10/1000µs waveform
(1)(2)
Fig.3
Peak power pulse current with a 10/1000µs waveform
(1)
Fig.1
Peak forward surge current 10ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 25A
(3)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per fig.3 and derated above T
A
= 25°C per fig.2.
(2) Mounted on P.C.B. with 5.0 x 5.0mm copper pads attached to each terminal
(3) Pulse test: 300µs pulse width, 1% duty cycle
Document Number 88471
04-Aug-04
www.vishay.com
1
TPSMP13 thru TPSMP43A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Device Type
Device
Marking
Code
Breakdown Voltage
V
(BR)
(1)
at I
T
(V)
Min.
Max.
Maximum Maximum
Maximum Reverse Peak Pulse Maximum Maximum
Reverse Leakage
Surge
Clamping Temperature
Test
Stand-off Leakage
at V
WM
Current
Voltage
Coefficient
at I
PPM
of V
(BR)
Current Voltage
at V
WM
T
J
= 150°C I
PPM (Note 2)
I
T
(mA) V
WM
(Volts) I
R
(µA)
I
D
(µA)
(Amps)
Vc (Volts)
(%/°C)
TPSMP13
TPSMP13A
TPSMP15
TPSMP15A
TPSMP16
TPSMP16A
TPSMP18
TPSMP18A
TPSMP20
TPSMP20A
TPSMP22
TPSMP22A
TPSMP24
TPSMP24A
TPSMP27
TPSMP27A
TPSMP30
TPSMP30A
TPSMP33
TPSMP33A
TPSMP36
TPSMP36A
TPSMP39
TPSMP39A
TPSMP43
TPSMP43A
AUP
AVP
AWP
AXP
AYP
AZP
BDP
BEP
BFP
BGP
BHP
BKP
BLP
BMP
BNP
BPP
BQP
BRP
BSP
BTP
BUP
BVP
BWP
BXP
BYP
BZP
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
14.3
13.7
16.3
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
21.1
22.0
18.2
18.9
17.0
17.8
15.1
15.9
13.7
14.4
12.5
13.1
11.5
12.0
10.2
10.7
9.2
9.7
8.4
8.8
7.7
8.0
7.1
7.4
6.5
6.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.5
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.088
0.090
0.090
0.092
0.092
0.094
0.094
0.100
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
Notes:
(1) V
(BR)
measured after I
T
applied for 300µs, I
T
=square wave pulse or equivalent
(2) Surge current waveform per Fig.3 and derated per Fig.2
(3) All terms and symbols are consistant with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88471
04-Aug-04
TPSMP13 thru TPSMP43A
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig.1 – Peak Pulse Power Rating Curve
T
A
= 25°C
Non-repetitive pulse
waveform shown in Fig. 3
10
Fig. 2 – Pulse Derating Curve
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage (%)
100
100
P
PPM,
Peak Power (KW)
75
50
TPSMP13 - TPSMP43A
1.0
25
0.1
0.1µs
0
0
25
50
75
100
125
150
175
200
1.0µs
10µs
100µs
1.0ms
10ms
td, Pulse Width, sec.
T
A
, Ambient Temperature (°C)
Fig. 3 – Pulse Waveform
150
10000
Fig. 4 – Typical Junction Capacitance
CJ, Junction Capacitance (pF)
T
J
= 25°C
f = 1.0 MHz
Vsig = 50mVp-p
1000
Measure at
Zero Bias
I
PPM
– Peak Pulse Current, % I
RSM
tr = 10µsec.
Peak Value
I
PPM
100
T
J
= 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of I
PPM
Half Value – IPP
2
I
PPM
50
10/1000µsec.
Waveform
as defined by R.E.A.
100
Measured at
Stand-Off
Voltage, V
WM
td
0
0
1.0
2.0
3.0
4.0
10
0
10
100
t – Time (ms)
V(BR) Breakdown Voltage (V)
Fig. 5 – Maximum Peak Forward
Surge Current
40
I
FSM,
Peak Forward Surge Current (A)
35
30
25
20
15
10
5
0
1
10
100
Number of Cycles at 50 Hz
Document Number 88471
04-Aug-04
www.vishay.com
3
