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TQM7M6018_15

Dual-Broadband Power Amplifier Module

厂商名称:TriQuint Semiconductor Inc. (Qorvo)

厂商官网:http://www.triquint.com

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TQM7M6018
Dual-Broadband Power Amplifier Module
Applications
WCDMA Handsets / Data Cards
Bands 1, 2, 5, 8, 25, 26
BC0 / BC1 CDMA / EVDO Handsets / Data Cards
HSDPA / HSUPA / HSPA+
Functional Block Diagram
CPL_IN
GND
Vbatt
RFout_HB
Product Features
Integrated high efficiency dual-broadband two gain
state power amplifier, V
REG
circuitry, input band
select switch and directional coupler
Small Size = 4.0 mm x 3.0 mm
Low Quiescent Current in LPM
High Max Power PAE
No External Voltage Regulation Required
APT (Average Power Tracking) Capable
RFin
GND
VenHB
Vcc
VenLB
GND
Vmode
RFout_LB
General Description
The TQM7M6018 PA module integrates two high
efficiency BiHEMT power amplifiers, an input band
select switch, a directional coupler and Vreg circuitry into
a compact 4.0 mm x 3.0 mm package. TriQuint’s
CuFlip® assembly technology and BiHEMT GaAs
process provides a compact, low cost solution optimized
for the Qualcomm WTR2605 transceiver with state-of-
the-art HPM PAE.
The TQM7M6018 is a power amplifier module for bands
1, 2, 5, 8, 25 and 26 for use with WCDMA and CDMA
modulations. The combination of high performance, low
cost and small size makes the TQM7M6018 ideally
suited for both mobile handset and data card
applications.
GND
GND
CPL_OUT
Electrical Specifications
Parameter
B1
B2
B5
B8 Units
Max P
OUT
+28.3 +28.3 +27.0 +28.0 dBm
HPM Pmax PAE *
45
%
Rx Noise (typ)
−138 −136 −135 −135 dBm/Hz
HPM Gain
27
dB
Typical performance for WCDMA Rel99,
V
CC
=+3.4 VDC, V
EN
=HIGH, T
C
=25 °C.
* PAE measured at required Vcc for Rel99
ACLR1 ≤ 40 dBc.
Ordering Information
Part No.
Description
TQM7M6018
Dual-Broadband PAM
Standard T/R size = 2500 pieces on a 13” reel
Datasheet: Rev. J 06-23-14
© 2014 TriQuint
GND
-
1 of 16
-
Disclaimer: Subject to change without notice
www.triquint.com
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参数对比
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型号 TQM7M6018_15 TQM7M6018
描述 Dual-Broadband Power Amplifier Module Dual-Broadband Power Amplifier Module
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