TR5050™ LEDs
Data Sheet
CxxxTR5050-Sxx000
Cree’s TR5050 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the TV-backlighting
and general-illumination markets. The TR5050 LEDs are among the brightest in the top-view market while delivering a
low forward voltage, resulting in a very bright and highly efficient solution. The design is optimally suited for industry-
standard top-view packages.
FEATURES
•
•
•
•
•
•
Rectangular LED RF Performance
–
450 & 460 nm – 180 mW min
Adhesive Die Attach
Low Forward Voltage – 3.3 V Typical at 120 mA
Maximum DC Forward Current - 180 mA
Class 2 ESD Rating
InGaN Junction on Thermally Conductive SiC
Substrate
APPLICATIONS
•
•
•
Large LCD Backlighting
–
Television
General Illumination
Medium LCD Backlighting
–
–
•
•
Portable PCs
Monitors
LED Video Displays
White LEDs
CxxxTR5050-Sxx000 Chip Diagram
Top View
Die Cross Section
Bottom View
.-
CPR3ER Rev
Data Sheet:
TR5050 LED
500 x 500 μm
Cathode (-)
98-μm diameter
Anode (+)
90-μm diameter
Bottom Surface
327 x 327 μm
t = 175 μm
Subject to change without notice.
www.cree.com
1
Maximum Ratings at T
A
= 25°C
Notes 1&3
DC Forward Current
Note 4
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Typical Electrical/Optical Characteristics at T
A
= 25°C, If = 120 mA
Part Number
Forward Voltage (V
f
, V)
Min.
C450TR5050-Sxx000
C460TR5050-Sxx000
Mechanical Specifications
Description
P-N Junction Area (μm)
Chip Area (μm)
Chip Thickness (μm)
Au Bond Pad Diameter Anode (μm)
Au Bond Pad Thicknesses (μm)
Au Bond Pad Diamater Cathode (μm)
Bottom Area (μm)
2.7
2.7
Typ.
3.3
3.3
Max.
3.5
3.5
Note 3
CxxxTR5050-Sxx000
180 mA
230 mA
150°C
5 V
-40°C to +100°C
-40°C to +100°C
1000 V
Class 2
Reverse Current
[I(Vr=5V), μA]
Max.
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
20
21
CxxxTR5050-Sxx000
Dimension
426 x 443
500 x 500
175
90
1.0
98
327 x 327
Tolerance
±35
±35
±15
±10
±0.5
±10
±35
Notes:
1. Maximum ratings are package-dependent. The above ratings were determined using lamps in chip-on-MCPCB (metal core PCB)
packages for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific
package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 120 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy encapsulant and clear epoxy die attach).
Optical characteristics measured in an integrating sphere using Illuminance E.
4. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for
the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to
optimize product performance.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5050 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3ER Rev. -
Standard Bins for CxxxTR5050-Sxx000
LED chips are sorted to the radiant
flux and dominant wavelength bins shown. A sorted die sheet contains die from
only one bin. Sorted die kit (CxxxTR5050-Sxxxx) orders may be filled with any or all bins (CxxxTR5050-xxxx) contained
in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 120 mA.
C450TR5050-S18000
C450TR5050-0209
C450TR5050-0210
C450TR5050-0206
C450TR5050-0202
C450TR5050-0211
C450TR5050-0207
C450TR5050-0203
C450TR5050-0212
C450TR5050-0208
C450TR5050-0204
Radiant Flux (mW)
220.0
C450TR5050-0205
200.0
C450TR5050-0201
180.0
445
447.5
450
Dominant Wavelength (nm)
452.5
455
Note: The radiant-flux values above are representative of the die in a Cree 5-mm lamp.
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5050 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3ER Rev. -
Relative Light I
100%
75%
50%
25%
Characteristic Curves
0%
0
50
100
150
200
These are representative measurements for the TR5050 LED product. Actual curves will vary slightly for the various
radiant flux and dominant wavelength bins.
Dominant Wavelength Shift Vs Junction Temperature
Forward Current vs. Forward Voltage
160
140
6
If (mA)
Wavelength Shift vs. Forward Current
Dominant Wavelength Shift (nm)
Dominant Wavelength Shift (nm)
180
5
3
4
2
3
1
2
1
0
0
-1
-1
-2
-2
-3
25
0
50
50
75
100
150
125
150
200
If (mA)
120
100
80
60
40
20
0
0
0.5
1
1.5
2
2.5
3
3.5
4
100
Junction Temperature (°C)
Vf (V)
If (mA)
Forward Current vs. Forward Voltage
200
175%
175
150
150%
Relative Intensity vs. Forward Current
0.000
-0.050
Voltage Shift Vs Junction Temperature
Relative Light
If (mA)
Intensity
Voltage Shift (V)
0
0.5
20
40
1
60
1.5
2
2.5
120
3
140
3.5
160
4
125
125%
100
100%
75
75%
50
50%
25
0
25%
0%
0
-0.100
-0.150
-0.200
-0.250
-0.300
-0.350
-0.400
Vf
80
(V)
100
180
25
50
75
100
125
150
If (mA)
Junction Temperature (°C)
100%
3
Relative Light Intensity Vs Junction Temperature
Wavelength Shift vs. Forward Current
Dominant Wavelength Shift (nm)
Relative Light Intensity
95%
2
90%
1
85%
0
80%
-1
75%
-2
70%
-3
25
50
75
100
125
150
0
20
40
Junction Temperature (°C)
If (mA)
60
80
100
120
140
160
180
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5050 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3ER Rev. -
Radiation Pattern
Far Fields – TR500
This is a representative radiation pattern for the TR5050 LED product. Actual patterns will vary slightly for each chip.
Copyright © 2010, Cree, Inc. (Confidential)
pg. 2
Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks, and TR and TR5050 are trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3ER Rev. -
