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TS271BMDT

OP-AMP, 3500uV OFFSET-MAX, 0.1MHz BAND WIDTH, PDSO8, MICRO, PLASTIC, SO-8

器件类别:模拟混合信号IC    放大器电路   

厂商名称:ST(意法半导体)

厂商官网:http://www.st.com/

器件标准:  

下载文档
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
ST(意法半导体)
零件包装代码
SOIC
包装说明
MICRO, PLASTIC, SO-8
针数
8
Reach Compliance Code
compliant
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.0003 µA
标称共模抑制比
80 dB
频率补偿
YES
最大输入失调电压
3500 µV
JESD-30 代码
R-PDSO-G8
JESD-609代码
e4
长度
4.9 mm
低-偏置
YES
低-失调
NO
湿度敏感等级
1
负供电电压上限
标称负供电电压 (Vsup)
功能数量
1
端子数量
8
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
包装方法
TAPE AND REEL
峰值回流温度(摄氏度)
260
电源
10 V
可编程功率
YES
认证状态
Not Qualified
座面最大高度
1.75 mm
标称压摆率
0.04 V/us
最大压摆率
1.5 mA
供电电压上限
18 V
标称供电电压 (Vsup)
10 V
表面贴装
YES
技术
CMOS
温度等级
MILITARY
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
标称均一增益带宽
100 kHz
最小电压增益
6000
宽度
3.9 mm
文档预览
TS271C,I,M
CMOS PROGRAMMABLE
LOW POWER SINGLE OPERATIONAL AMPLIFIER
s
OFFSET NULL CAPABILITY (by external
s
s
compensation)
DYNAMIC CHARACTERISTICS
ADJUSTABLE I
SET
CONSUMPTION CURRENT AND DYNAMIC
PARAMETERS ARE STABLE REGARDING
THE VOLTAGE POWER SUPPLY
VARIATIONS
OUTPUT VOLTAGE CAN SWING TO
GROUND
VERY LARGE I
SET
RANGE
STABLE AND LOW OFFSET VOLTAGE
THREE INPUT OFFSET VOLTAGE
SELECTIONS
s
s
s
s
N
DIP8
(Plastic Package)
DESCRIPTION
The TS271 is a low cost, low power single oper-
tional amplifier designed to operate with single or
dual supplies. This operational amplifier uses the
ST silicon gate CMOS process giving it an excel-
lent consumption-speed ratio. This amplifier is ide-
ally suited for low consumption applications.
The power supply is externally programmable with
a resistor connected between pins 8 and 4. It al-
lows to choose the best consumption-speed ratio
and supply current can be minimized according to
the required speed. This device is specified for the
following I
SET
current values : 1.5µA, 25µA,
130µA.
This CMOS amplifier offers very high input imped-
ance and extremely low input currents. The major
advantage versus JFET devices is the very low in-
put currents drift with temperature (see figure 3).
ORDER CODE
Package
Part Number
Temperature Range
N
TS271C/AC/BC
0°C, +70°C
TS271I/AI/BI
-40°C, +125°C
TS271M/AM/BM
-55°C, +125°C
Example :
TS271ACN
D
1 - Offset Null 1
2 - Inverting Input 1
3 - Non-inverting Input 1
4 - V
CC
-
5 - Offset Null 2
6 - Output
7 - V
CC
+
8 - I
Set
D
SO8
(Plastic Micropackage)
PIN CONNECTIONS
(top view)
1
2
3
4
-
+
8
7
6
5
N =
Dual in Line Package (DIP)
D =
Small Outline Package (SO) - also available in Tape & Reel (DT)
November 2001
1/15
TS271C,I,M
BLOCK DIAGRAM
V
CC
Current
source
xI
Input
differential
Second
stage
Output
stage
Output
V
CC
E
E
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC+
V
id
V
i
I
o
I
in
T
oper
T
stg
Parameter
Supply Voltage
1)
Differential Input Voltage
2)
Input Voltage
3)
Output Current for V
CC+
15V
Input Current
Operating Free-Air Temperature Range
Storage Temperature Range
0 to +70
TS271C/AC/BC
TS271I/AI/BI
18
±18
-0.3 to 18
±30
±5
-40 to +125
-65 to +150
-55 to +125
TS271M/AM/BM
Unit
V
V
V
mA
mA
°C
°C
1. All values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage.
OPERATING CONDITIONS
Symbol
V
CC+
V
icm
Supply Voltage
Common Mode Input Voltage Range
Parameter
Value
3 to 16
0 to V
CC+
- 1.5
Unit
V
V
2/15
SCHEMATIC DIAGRAM
V
CC
T
24
T
25
T
26
T
6
T
8
T
27
T
5
T
10
T
15
R
2
T
28
T
1
Input
T
18
T
2
Input
R1
C1
T
11
T
12
T
17
T
7
T
23
T
3
Output
T
19
T
4
T
16
T
9
T
13
T
14
T
20
T
22
T
21
T
29
V
CC
TS271C,I,M
3/15
TS271C,I,M
OFFSET VOLTAGE NULL CIRCUIT
RESISTOR BIASING
-
V
CC+
V
CC+
5
+
1
8
25kΩ
V
CC
-
+
-
V
O
-
V
O
+
R
set
V
CC
-
R
set
R
set
V
CC
-
R
set
CONNECTED TO GROUND
R
set
CONNECTED TO V
CC
- (R
set
VALUE : SEE Fig. 1)
OFFSET COMPENSATION GUARANTEED FOR
TS271BCX (I
SET
> 25
µ
A), TS271ACX (I
SET
> 90
µ
A)
Figure 1 :
R
SET
Connected to V
CC-
V
CC
= +3V
V
CC
= +5V
Rset
V
CC
= +16V
V
CC
= +10V
10MΩ
1MΩ
100kΩ
10kΩ
0.1
µ
A
1
µ
A
10
µ
A
100
µ
A
I
set
4/15
TS271C,I,M
ELECTRICAL CHARACTERISTICS for I
SET
= 1.5µA
V
CC
+
= +10V, V
CC
-
= 0V, T
amb
= +25°C (unless otherwise specified)
TS271C/AC/BC
Symbol
Parameter
Min.
Input Offset Voltage
V
O
= 1.4V, V
ic
= 0V
V
io
T
min
T
amb
T
max
TS271C/I/M
TS271AC/AI/AM
TS271B/C/I/M
TS271C/I/M
TS271AC/AI/AM
TS271B/C/I/M
Typ.
1.1
0.9
0.25
Max.
10
5
2
12
6.5
3
TS271I/AI/BI
TS271M/AM/BM
Min.
Typ.
Max.
10
5
2
12
6.5
3.5
Unit
1.1
0.9
0.25
mV
DV
io
I
io
Input Offset Voltage Drift
Input Offset Current note
1)
V
ic
= 5V, V
O
= 5V
T
min
T
amb
T
max
Input Bias Current - see note 1
V
ic
= 5V, V
O
= 5V
T
min
T
amb
T
max
High Level Output Voltage
V
id
= 100mV, R
L
= 1MΩ
T
min
T
amb
T
max
Low Level Output Voltage
V
id
= -100mV
Large Signal Voltage Gain
V
iC
= 5V, R
L
= 1MΩ, V
o
= 1V to 6V
T
min
T
amb
T
max
Gain Bandwidth Product
A
v
= 40dB, R
L
= 1MΩ, C
L
= 100pF, f
in
= 100kHz
Common Mode Rejection Ratio
V
iC
= 1V to 7.4V, V
o
= 1.4V
Supply Voltage Rejection Ratio
V
CC+
= 5V to 10V, V
o
= 1.4V
Supply Current (per amplifier)
A
v
= 1, no load, V
o
= 5V
T
min
T
amb
T
max
Output Short Circuit Current
V
o
= 0V, V
id
= 100mV
Output Sink Current
V
o
= V
CC
, V
id
= -100mV
Slew Rate at Unity Gain
R
L
= 1MΩ, C
L
= 100pF, V
i
= 3 to 7V
Phase Margin at Unity Gain
A
v
= 40dB, R
L
= 1MΩ C
L
= 10pF
C
L
= 100pF
Overshoot Factor
A
v
= 40dB, R
L
= 1MΩ C
L
= 10pF
C
L
= 100pF
Equivalent Input Noise Voltage
f = 1kHz, R
s
= 100Ω
60
60
30
20
8.8
8.7
2
1
100
1
150
9
8.8
8.6
50
100
30
20
2
1
200
1
300
9
µV/°C
pA
I
ib
pA
V
OH
V
OL
A
vd
GBP
CMR
SVR
V
50
100
mV
V/mV
0.1
80
80
10
15
17
60
60
0.1
80
80
10
15
18
MHz
dB
dB
I
CC
I
o
I
sink
SR
φm
µA
60
45
0.04
35
10
40
70
30
60
45
0.04
35
10
40
70
30
mA
mA
V/µs
Degrees
K
OV
%
nV
-----------
-
Hz
e
n
1.
Maximum values including unavoidable inaccuracies of the industrial test.
5/15
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