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TS27L2AIDT

PCBs u0026 Breadboards SOIC to DIP adpt 0.7in DIP spacing

器件类别：模拟混合信号IC    放大器电路   

厂商名称：ST(意法半导体)

厂商官网：http://www.st.com/

器件标准：

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器件参数
参数名称
属性值
Brand Name
STMicroelectronics
是否Rohs认证
符合
零件包装代码
SOIC
包装说明
SOP, SOP8,.25
针数
8
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
10 weeks
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.0003 µA
标称共模抑制比
80 dB
频率补偿
YES
最大输入失调电压
6500 µV
JESD-30 代码
R-PDSO-G8
JESD-609代码
e4
长度
4.9 mm
低-偏置
YES
低-失调
NO
微功率
YES
湿度敏感等级
1
负供电电压上限
标称负供电电压 (Vsup)
功能数量
2
端子数量
8
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
包装方法
TAPE AND REEL
峰值回流温度（摄氏度）
260
功率
NO
电源
5/10 V
可编程功率
NO
认证状态
Not Qualified
座面最大高度
1.75 mm
标称压摆率
0.04 V/us
最大压摆率
0.036 mA
供电电压上限
18 V
标称供电电压 (Vsup)
10 V
表面贴装
YES
技术
CMOS
温度等级
AUTOMOTIVE
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
标称均一增益带宽
100 kHz
最小电压增益
40000
宽带
NO
宽度
3.9 mm
Base Number Matches
1
文档预览
TS27L2C,I,M
PRECISION VERY LOW POWER
CMOS DUAL OPERATIONAL AMPLIFIERS
s
VERY LOW POWER CONSUMPTION :
10µA/op
s
OUTPUT VOLTAGE CAN SWING TO
GROUND
s
EXCELLENT PHASE MARGIN ON
CAPACITIVE LOADS
s
STABLE AND LOW OFFSET VOLTAGE
s
THREE INPUT OFFSET VOLTAGE
SELECTIONS
DESCRIPTION
These devices are low cost, low power dual oper-
ational amplifiers designed to operate with single
or dual supplies. These operational amplifiers use
the ST silicon gate CMOS process allowing an ex-
cellent consumption-speed ratio. These series are
ideally suited for low consumption applications.
Three power consumptions are available allowing
to have always the best consumption-speed ratio:
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
P
TSSOP8
(Thin Shrink Small Outline Package)
u
I
CC
= 10µA/amp.: TS27L2 (very low power)
u
I
CC
= 150µA/amp.: TS27M2 (low power)
u
I
CC
= 1mA/amp.: TS272 (standard)
These CMOS amplifiers offer very high input im-
pedance and extremely low input currents. The
major advantage versus JFET devices is the very
low input currents drift with temperature (see fig-
ure 2).
ORDER CODE
Package
Part Number
Temperature Range
N
TS27L2C/AC/BC
0°C, +70°C
TS27L2I/AI/BI
-40°C, +125°C
TS27L2M/AM/BM
-55°C, +125°C
Example :
TS27L2ACN
•
•
•
D
•
•
•
P
•
•
•
PIN CONNECTIONS
(top view)
1
2
3
4
-
+
-
+
8
7
6
5
N =
Dual in Line Package (DIP)
D =
Small Outline Package (SO) - also available in Tape & Reel (DT)
P =
Thin Shrink Small Outline Package (TSSOP) - only available
in Tape & Reel (PT)
1 - Output 1
2 - Inverting Input 1
3 - Non-inverting Input 1
4 - V
CC
-
5 - Non-inverting Input 2
6 - Inverting Input 2
7 - Output 2
8 - V
CC
+
November 2001
1/9
TS27L2C,I,M
BLOCK DIAGRAM
V
CC
Current
source
xI
Input
differential
Second
stage
Output
stage
Output
V
CC
E
E
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC+
V
id
V
i
I
o
I
in
T
oper
T
stg
Parameter
Supply Voltage
1)
Differential Input Voltage
2)
Input Voltage
3)
Output Current for V
CC+
≥
15V
Input Current
Operating Free-Air Temperature Range
Storage Temperature Range
0 to +70
TS27L2C/AC/BC
TS27L2I/AI/BI
18
±18
-0.3 to 18
±30
±5
-40 to +125
-65 to +150
-55 to +125
TS27L2M/AM/BM
Unit
V
V
V
mA
mA
°C
°C
1. All values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage.
OPERATING CONDITIONS
Symbol
V
CC+
V
icm
Supply Voltage
Common Mode Input Voltage Range
Parameter
Value
3 to 16
0 to V
CC+
- 1.5
Unit
V
V
2/9
V
CC
T
24
T
25
T
26
T
6
T
8
T
27
T
5
T
10
T
15
SCHEMATIC DIAGRAM
(for 1/2 TS27L2)
R
2
T
28
T
1
Input
T
18
T
2
Input
R1
C1
T
11
T
12
T
17
T
7
T
23
T
3
Output
T
19
T
4
T
16
T
9
T
13
T
14
T
20
T
22
T
21
T
29
V
CC
TS27L2C,I,M
3/9
TS27L2C,I,M
ELECTRICAL CHARACTERISTICS
V
CC
+
= +10V, V
CC
-
= 0V, T
amb
= +25°C (unless otherwise specified)
TS27L2C/AC/BC
Symbol
Parameter
Min.
Input Offset Voltage
V
O
= 1.4V, V
ic
= 0V
V
io
T
min
≤
T
amb
≤
T
max
TS27L2C/I/M
TS27L2AC/AI/AM
TS27L2B/C/I/M
TS27L2C/I/M
TS27L2AC/AI/AM
TS27L2B/C/I/M
Typ.
1.1
0.9
0.25
Max.
10
5
2
12
6.5
3
TS27L2I/AI/BI
TS27L2M/AM/BM
Min.
Typ.
Max.
10
5
2
12
6.5
3.5
Unit
1.1
0.9
0.25
mV
DV
io
I
io
Input Offset Voltage Drift
Input Offset Current note
1)
V
ic
= 5V, V
O
= 5V
T
min
≤
T
amb
≤
T
max
Input Bias Current - see note 1
V
ic
= 5V, V
O
= 5V
T
min
≤
T
amb
≤
T
max
High Level Output Voltage
V
id
= 100mV, R
L
= 1MΩ
T
min
≤
T
amb
≤
T
max
Low Level Output Voltage
V
id
= -100mV
Large Signal Voltage Gain
V
iC
= 5V, R
L
= 1MΩ, V
o
= 1V to 6V
T
min
≤
T
amb
≤
T
max
Gain Bandwidth Product
A
v
= 40dB, R
L
= 1MΩ, C
L
= 100pF, f
in
= 100kHz
Common Mode Rejection Ratio
V
iC
= 1V to 7.4V, V
o
= 1.4V
Supply Voltage Rejection Ratio
V
CC+
= 5V to 10V, V
o
= 1.4V
Supply Current (per amplifier)
A
v
= 1, no load, V
o
= 5V
T
min
≤
T
amb
≤
T
max
Output Short Circuit Current
V
o
= 0V, V
id
= 100mV
Output Sink Current
V
o
= V
CC
, V
id
= -100mV
Slew Rate at Unity Gain
R
L
= 1MΩ, C
L
= 100pF, V
i
= 3 to 7V
Phase Margin at Unity Gain
A
v
= 40dB, R
L
= 1MΩ, C
L
= 100pF
Overshoot Factor
Equivalent Input Noise Voltage
f = 1kHz, R
s
= 100Ω
Channel Separation
65
60
60
45
8.8
8.7
2
1
100
1
150
9
8.8
8.6
50
100
60
40
2
1
200
1
300
9
µV/°C
pA
I
ib
pA
V
OH
V
OL
A
vd
V
50
100
mV
V/mV
GBP
CMR
SVR
0.1
80
80
10
15
17
65
60
0.1
80
80
10
15
18
MHz
dB
dB
I
CC
I
o
I
sink
SR
φm
K
OV
e
n
V
o1
/V
o2
1.
µA
60
45
0.04
45
30
68
120
60
45
0.04
45
30
68
120
mA
mA
V/µs
Degrees
%
nV
-----------
-
Hz
dB
Maximum values including unavoidable inaccuracies of the industrial test.
4/9
TS27L2C,I,M
TYPICAL CHARACTERISTICS
Figure 1 :
Supply Current (each amplifier) versus
Supply Voltage
20
Figure 3b :
High Level Output Voltage versus
High Level Output Current
20
OUTPUT VOLTAGE, V
OH
(V)
SUPPLY CURRENT, I
CC
(
µ
A)
15
T
amb
= 25
°
C
A
V
= 1
V
O
= V
CC
/ 2
T
amb
= 25° C
16
12
8
4
0
-50
V
id
= 100mV
V
CC
= 16V
10
V
CC
= 10V
5
0
4
8
12
16
SUPPLY VOLTAGE, V
CC
(V)
-40
-30
-20
-10
OUTPUT CURRENT, I
OH
(mA)
0
Figure 2 :
Input Bias Current versus Free Air
Temperature
100
Figure 4a :
Low Level Output Voltage versus Low
Level Output Current
1 .0
O U T P U T V O L T A G E , V
O L
(V )
INPUT BIAS CURRENT, IIB (pA)
V
CC
= 10V
V
i
= 5V
0 .8
0 .6
0 .4
0 .2
V
CC
= 3V
V
CC
= 5V
10
T amb = 2 5 °C
V ic = 0 .5 V
V id = -1 0 0 m V
1
2
3
1
25
50
100
TEMPERATURE, T
amb
(°C)
75
125
0
O U T P U T C U R R E N T , I
O L
(m A )
Figure 3a :
High Level Output Voltage versus
High Level Output Current
5
Figure 4b :
Low Level Output Voltage versus Low
Level Output Current
3
O U T P U T V O L T A G E , V OL (V )
OUTPUT VOLTAGE, V
OH
(V)
4
3
2
1
0
-10
T
amb
= 25° C
V
id
= 100mV
V
CC
= 5V
V
C C
= 10V
2
V
C C
= 1 6 V
1
T amb = 2 5 °C
V i = 0 .5 V
Vid = -1 0 0 m V
V
CC
= 3V
-8
-6
-4
-2
0
0
4
8
12
16
20
OUTPUT CURRENT, I
OH
(mA)
O U T P U T C U R R E N T , I OL (m A )
5/9
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参数对比
与TS27L2AIDT相近的元器件有：TS27L2AID、TS27L2IPT、TS27L2ACN、TS27L2ACDT、TS27L2BIPT、TS27L2IDT、TS27L2BCDT、TS27L2CN、TS27L2BID。描述及对比如下：
型号 TS27L2AIDT TS27L2AID TS27L2IPT TS27L2ACN TS27L2ACDT TS27L2BIPT TS27L2IDT TS27L2BCDT TS27L2CN TS27L2BID
描述 PCBs u0026 Breadboards SOIC to DIP adpt 0.7in DIP spacing Operational Amplifiers - Op Amps Dual Prec Low-Power LDO Voltage Regulators 300mA Low Quiescent Crnt low noise LDO Operational Amplifiers - Op Amps Dual Prec Low-Power Operational Amplifiers - Op Amps Dual Prec Low-Power Operational Amplifiers - Op Amps Dual Prec Low-Power Precision Amplifiers PRCISION VERY Lo Pwr CMOS DUAL OP AMPS Operational Amplifiers - Op Amps Dual Prec Low-Power Operational Amplifiers - Op Amps Dual Prec Low-Power
Brand Name STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
零件包装代码 SOIC SOIC SOIC DIP SOIC SOIC SOIC SOIC DIP SOIC
包装说明 SOP, SOP8,.25 SOP, SOP8,.25 TSSOP, TSSOP8,.25 DIP, DIP8,.3 SOP, SOP8,.25 TSSOP, TSSOP8,.25 SOP, SOP8,.25 SOP, SOP8,.25 DIP, DIP8,.3 SOP, SOP8,.25
针数 8 8 8 8 8 8 8 8 8 8
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant not_compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB) 0.0003 µA 0.0003 µA 0.0003 µA 0.00015 µA 0.00015 µA 0.0003 µA 0.0003 µA 0.00015 µA 0.00015 µA 0.0003 µA
标称共模抑制比 80 dB 80 dB 80 dB 80 dB 80 dB 80 dB 80 dB 80 dB 80 dB 80 dB
频率补偿 YES YES YES YES YES YES YES YES YES YES
最大输入失调电压 6500 µV 6500 µV 12000 µV 6500 µV 6500 µV 3500 µV 12000 µV 3000 µV 12000 µV 3500 µV
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDIP-T8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDSO-G8 R-PDIP-T8 R-PDSO-G8
JESD-609代码 e4 e4 e4 e3 e4 e4 e4 e4 e3 e4
低-偏置 YES YES YES YES YES YES YES YES YES YES
低-失调 NO NO NO NO NO NO NO NO NO NO
微功率 YES YES YES YES YES YES YES YES YES YES
功能数量 2 2 2 2 2 2 2 2 2 2
端子数量 8 8 8 8 8 8 8 8 8 8
最高工作温度 125 °C 125 °C 125 °C 70 °C 70 °C 125 °C 125 °C 70 °C 70 °C 125 °C
最低工作温度 -40 °C -40 °C -40 °C - - -40 °C -40 °C - - -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP TSSOP DIP SOP TSSOP SOP SOP DIP SOP
封装等效代码 SOP8,.25 SOP8,.25 TSSOP8,.25 DIP8,.3 SOP8,.25 TSSOP8,.25 SOP8,.25 SOP8,.25 DIP8,.3 SOP8,.25
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH IN-LINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE SMALL OUTLINE IN-LINE SMALL OUTLINE
峰值回流温度（摄氏度） 260 260 260 NOT SPECIFIED 260 260 260 260 NOT SPECIFIED 260
功率 NO NO NO NO NO NO NO NO NO NO
电源 5/10 V 5/10 V 5/10 V 5/10 V 5/10 V 5/10 V 5/10 V 5/10 V 5/10 V 5/10 V
可编程功率 NO NO NO NO NO NO NO NO NO NO
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.75 mm 1.75 mm 1.2 mm 5.08 mm 1.75 mm 1.2 mm 1.75 mm 1.75 mm 5.08 mm 1.75 mm
标称压摆率 0.04 V/us 0.04 V/us 0.04 V/us 0.04 V/us 0.04 V/us 0.04 V/us 0.04 V/us 0.04 V/us 0.04 V/us 0.04 V/us
最大压摆率 0.036 mA 0.036 mA 0.036 mA 0.034 mA 0.034 mA 0.036 mA 0.036 mA 0.034 mA 0.034 mA 0.036 mA
供电电压上限 18 V 18 V 18 V 18 V 18 V 18 V 18 V 18 V 18 V 18 V
标称供电电压 (Vsup) 10 V 10 V 10 V 10 V 10 V 10 V 10 V 10 V 10 V 10 V
表面贴装 YES YES YES NO YES YES YES YES NO YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE COMMERCIAL COMMERCIAL AUTOMOTIVE AUTOMOTIVE COMMERCIAL COMMERCIAL AUTOMOTIVE
端子面层 Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Matte Tin (Sn) Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Matte Tin (Sn) - annealed Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式 GULL WING GULL WING GULL WING THROUGH-HOLE GULL WING GULL WING GULL WING GULL WING THROUGH-HOLE GULL WING
端子节距 1.27 mm 1.27 mm 0.65 mm 2.54 mm 1.27 mm 0.65 mm 1.27 mm 1.27 mm 2.54 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 30 10 NOT SPECIFIED 30 10 30 30 NOT SPECIFIED 30
标称均一增益带宽 100 kHz 100 kHz 100 kHz 100 kHz 100 kHz 100 kHz 100 kHz 100 kHz 100 kHz 100 kHz
最小电压增益 40000 40000 40000 45000 45000 40000 40000 45000 45000 40000
宽带 NO NO NO NO NO NO NO NO NO NO
宽度 3.9 mm 3.9 mm 3 mm 7.62 mm 3.9 mm 3 mm 3.9 mm 3.9 mm 7.62 mm 3.9 mm
是否Rohs认证 符合 符合 - 符合 - 符合 符合 符合 符合 符合
Factory Lead Time 10 weeks 25 weeks 12 weeks - 10 weeks - 10 weeks - 43 weeks 2 days -
长度 4.9 mm 4.9 mm 4.4 mm - 4.9 mm 4.4 mm 4.9 mm 4.9 mm - 4.9 mm
湿度敏感等级 1 1 1 - 1 1 1 1 - 1
包装方法 TAPE AND REEL - TAPE AND REEL - TAPE AND REEL TAPE AND REEL TAPE AND REEL TAPE AND REEL - -
厂商名称 - - ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体) ST(意法半导体)
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器件捷径:
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