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TS27M2BIDT

Operational Amplifiers - Op Amps Dual Prec Low-Power

器件类别：模拟混合信号IC    放大器电路   

厂商名称：ST(意法半导体)

厂商官网：http://www.st.com/

器件标准：

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器件参数
参数名称
属性值
Brand Name
STMicroelectronics
是否Rohs认证
符合
零件包装代码
SOIC
包装说明
ROHS COMPLIANT, MICRO, PLASTIC, SOP-8
针数
8
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
20 weeks
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.0003 µA
标称共模抑制比
80 dB
频率补偿
YES
最大输入失调电压
3500 µV
JESD-30 代码
R-PDSO-G8
JESD-609代码
e4
长度
4.9 mm
低-偏置
YES
低-失调
NO
微功率
YES
湿度敏感等级
1
负供电电压上限
标称负供电电压 (Vsup)
功能数量
2
端子数量
8
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
包装方法
TAPE AND REEL
峰值回流温度（摄氏度）
260
功率
NO
电源
5/10 V
可编程功率
NO
认证状态
Not Qualified
座面最大高度
1.75 mm
标称压摆率
0.6 V/us
最大压摆率
0.3 mA
供电电压上限
18 V
标称供电电压 (Vsup)
10 V
表面贴装
YES
技术
CMOS
温度等级
AUTOMOTIVE
端子面层
Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
标称均一增益带宽
1000 kHz
最小电压增益
10000
宽带
NO
宽度
3.9 mm
Base Number Matches
1
文档预览
TS27M2, TS27M2A, TS27M2B
Low-power CMOS dual operational amplifiers
Features
■
■
■
■
■
■
Wide supply voltage range: 3 to 16 V
Ultra-low consumption: 150 µA/op typ
Output voltage swing to ground
Excellent phase margin on capacitive load
Gain bandwidth product: 1 MHz typ
Vio down to 2 mV max. (B version)
N
DIP8
(Plastic package)
Description
The TS27x2 series are low-cost and low-power
dual operational amplifiers designed to operate
with high-voltage single or dual supplies. These
operational amplifiers use the ST silicon gate
CMOS process, providing an excellent
consumption-speed ratio thanks to three different
power consumptions, making them ideal for low-
consumption applications:
I
CC
= 10 µA/amp: TS27L2 (very low power),
I
CC
= 150 µA/amp: TS27M2 (low power) and
I
CC
= 1 mA/amp: TS272 (high speed)
The devices also offer a very high input
impedance and extremely low input currents.
Their main advantage compared to JFET devices
is the very low input current drift with temperature
(Figure
3).
D
SO-8
(Plastic micropackage)
P
TSSOP8
(Thin shrink small outline package)
Pin connections (top view)
Out1
In1-
In1+
V
CC-
1
2
3
4
_
+
_
+
8
7
6
5
V
CC+
Out2
In2-
In2+
August 2009
Doc ID 2306 Rev 2
1/14
www.st.com
14
Absolute maximum ratings and operating conditions
TS27M2, TS27M2A, TS27M2B
1
Absolute maximum ratings and operating conditions
Table 1.
Symbol
V
CC+
Vid
V
i
I
o
I
in
R
thja(4)(5)
T
stg
T
j
Absolute maximum ratings
Parameter
Supply voltage
(1)
Differential input voltage
(2)
Input voltage
(3)
Output current for V
CC+
≥
15V
Input current
SO-8
DIP8
TSSOP8
Storage temperature range
Maximum junction temperature
HBM: human body model
(6)
TS27M2x/Ax/Bx
18
±18
-0.3 to 18
±30
±5
125
85
120
-65 to +150
150
500
100
1.5
Unit
V
V
V
mA
mA
°C/W
°C
°C
V
V
kV
ESD
MM: machine model
(7)
CDM: charged device model
(8)
1. All values, except differential voltage are with respect to network ground terminal.
2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal.
3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive
supply voltage.
4. Short-circuits can cause excessive heating and destructive dissipation.
5. R
th
are typical values.
6. Human body model: a 100 pF capacitor is charged to the specified voltage, then discharged through a
1.5 kΩ resistor between two pins of the device. This is done for all couples of connected pin combinations
while the other pins are floating.
7. Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between
two pins of the device with no external series resistor (internal resistor < 5
Ω).
This is done for all couples of
connected pin combinations while the other pins are floating.
8. Charged device model: all pins and the package are charged together to the specified voltage and then
discharged directly to the ground through only one pin. This is done for all pins.
Table 2.
Symbol
V
CC+
V
icm
Toper
Operating conditions
Value
Parameter
TS27M2C/AC/BC
Supply voltage
Common mode input voltage
range
Operating free air temperature
range
0 to +70
TS27M2I/AI/BI
3 to 16
0 to V
CC+
- 1.5
-40 to +125
-55 to +125
TS27M2M/AM/BM
V
V
°C
Unit
2/14
Doc ID 2306 Rev 2
TS27M2, TS27M2A, TS27M2B
Figure 1.
Absolute maximum ratings and operating conditions
Simplified schematic diagram (for 1/2 TS27M2)
Output
T
16
T
3
T
15
T
10
T
11
T
12
T
8
T
6
R1
T
2
Input
C1
T
7
V
CC
T
5
T
1
T
27
Input
T
4
T
9
T
13
T
23
T
14
T
28
T
22
T
29
T
26
R
2
T
25
T
24
T
17
T
18
T
19
Doc ID 2306 Rev 2
T
20
T
21
V
CC
3/14
Electrical characteristics
TS27M2, TS27M2A, TS27M2B
2
Table 3.
Electrical characteristics
Electrical characteristics at V
CC
+ = +10 V, V
CC
- = 0 V, T
amb
= +25° C
(unless otherwise specified)
TS27M2xC
Parameter
Min.
Typ.
Max.
Symbol
TS27M2xI
TS27M2xM
Min.
Typ.
Max.
Unit
DC performance
Input offset voltage
V
O
= 1.4 V, V
ic
= 0 V
V
io
T
min
≤
T
amb
≤
T
max
TS27M2
TS27M2A
TS27M2B
TS27M2
TS27M2A
TS27M2B
1.1
0.9
0.25
10
5
2
12
6.5
3
10
5
2
12
6.5
3.5
1.1
0.9
0.25
mV
DV
io
I
io
Input offset voltage drift
Input offset current
(1)
V
ic
= 5 V, V
O
= 5 V
T
min
≤
T
amb
≤
T
max
Input bias current
(1)
V
ic
= 5 V, V
O
= 5 V
T
min
≤
T
amb
≤
T
max
High level output voltage
V
id
= 100 mV, R
L
= 100 lΩ
T
min
≤
T
amb
≤
T
max
Low level output voltage
V
id
= -100 mV
Large signal voltage gain
V
iC
= 5 V, R
L
= 100 kΩ, V
o
= 1 V to 6 V
T
min
≤
T
amb
≤
T
max
Common mode rejection ratio
V
iC
= 1 V to 7.4 V, V
o
= 1.4 V
Supply voltage rejection ratio
V
CC+
= 5 V to 10 V, V
o
= 1.4 V
Supply current (per amplifier)
A
v
= 1, no load, V
o
= 5 V
T
min
≤
T
amb
≤
T
max
Output short circuit current
V
o
= 0 V, V
id
= 100 mV
Output sink current
V
o
= V
CC
, V
id
= -100 mV
45
34
30
20
65
60
8.7
8.6
2
1
100
1
150
8.9
8.7
8.5
50
50
30
10
65
60
200
250
2
1
200
1
300
8.9
µV/°C
pA
I
ib
pA
V
OH
V
V
OL
50
50
mV
A
vd
V/mV
CMR
SVR
80
80
150
80
80
150
200
300
dB
dB
I
CC
µA
I
o
I
sink
60
45
60
45
mA
mA
4/14
Doc ID 2306 Rev 2
TS27M2, TS27M2A, TS27M2B
Table 3.
Electrical characteristics
Electrical characteristics at V
CC
+ = +10 V, V
CC
- = 0 V, T
amb
= +25° C
(unless otherwise specified) (continued)
TS27M2xC
Parameter
Min.
Typ.
Max.
Symbol
TS27M2xI
TS27M2xM
Min.
Typ.
Max.
Unit
AC performance
GBP
Gain bandwidth product
A
v
= 40 dB, R
L
= 100 kΩ, C
L
= 100 pF,
f
in
= 100 kHz
Slew rate at unity gain
R
L
= 100 kΩ C
L
= 100 pF, V
i
= 3 to 7 V
,
Phase margin at unity gain
A
v
= 40 dB, R
L
= 100 kΩ C
L
= 100 pF
,
Overshoot factor
Equivalent input noise voltage
f = 1 kHz, R
s
= 100
Ω
Channel separation
0.5
1
0.5
1
MHz
SR
φm
K
OV
e
n
V
o1
/V
o2
0.3
0.6
45
30
38
120
0.3
0.6
45
30
38
120
V/μs
Degrees
%
nV
-----------
-
Hz
dB
1. Maximum values including unavoidable inaccuracies of industrial tests.
Doc ID 2306 Rev 2
5/14
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参数对比
与TS27M2BIDT相近的元器件有：TS27M2ID、TS27M2CN、TS27M2AIN、TS27M2AID、TS27M2IN、TS27M2CD、TS27M2IDT。描述及对比如下：
型号 TS27M2BIDT TS27M2ID TS27M2CN TS27M2AIN TS27M2AID TS27M2IN TS27M2CD TS27M2IDT
描述 Operational Amplifiers - Op Amps Dual Prec Low-Power Operational Amplifiers - Op Amps Dual Prec Low-Power Operational Amplifiers - Op Amps Dual Prec Low-Power Operational Amplifiers - Op Amps Dual Prec Low-Power Operational Amplifiers - Op Amps Dual Prec Low-Power Operational Amplifiers - Op Amps Dual Prec Low-Power Operational Amplifiers - Op Amps HiRel & Standard Products Operational Amplifiers - Op Amps Dual Prec Low-Power
Brand Name STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合
零件包装代码 SOIC SOIC DIP DIP SOIC DIP SOIC SOIC
包装说明 ROHS COMPLIANT, MICRO, PLASTIC, SOP-8 ROHS COMPLIANT, MICRO, PLASTIC, SOP-8 ROHS COMPLIANT, PLASTIC, DIP-8 ROHS COMPLIANT, PLASTIC, DIP-8 ROHS COMPLIANT, MICRO, PLASTIC, SOP-8 ROHS COMPLIANT, PLASTIC, DIP-8 ROHS COMPLIANT, MICRO, PLASTIC, SOP-8 ROHS COMPLIANT, MICRO, PLASTIC, SOP-8
针数 8 8 8 8 8 8 8 8
Reach Compliance Code compliant compliant compliant compliant compliant unknown compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
放大器类型 OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
架构 VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB) 0.0003 µA 0.0003 µA 0.00015 µA 0.0003 µA 0.0003 µA 0.0003 µA 0.00015 µA 0.0003 µA
标称共模抑制比 80 dB 80 dB 80 dB 80 dB 80 dB 80 dB 80 dB 80 dB
频率补偿 YES YES YES YES YES YES YES YES
最大输入失调电压 3500 µV 12000 µV 12000 µV 6500 µV 6500 µV 12000 µV 12000 µV 12000 µV
JESD-30 代码 R-PDSO-G8 R-PDSO-G8 R-PDIP-T8 R-PDIP-T8 R-PDSO-G8 R-PDIP-T8 R-PDSO-G8 R-PDSO-G8
JESD-609代码 e4 e4 e3 e3 e4 e3 e4 e4
长度 4.9 mm 4.9 mm 9.27 mm 9.27 mm 4.9 mm 9.27 mm 4.9 mm 4.9 mm
低-偏置 YES YES YES YES YES YES YES YES
低-失调 NO NO NO NO NO NO NO NO
微功率 YES YES YES YES YES YES YES YES
功能数量 2 2 2 2 2 2 2 2
端子数量 8 8 8 8 8 8 8 8
最高工作温度 125 °C 125 °C 70 °C 125 °C 125 °C 125 °C 70 °C 125 °C
最低工作温度 -40 °C -40 °C - -40 °C -40 °C -40 °C - -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP DIP DIP SOP DIP SOP SOP
封装等效代码 SOP8,.25 SOP8,.25 DIP8,.3 DIP8,.3 SOP8,.25 DIP8,.3 SOP8,.25 SOP8,.25
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE IN-LINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度（摄氏度） 260 260 NOT SPECIFIED NOT SPECIFIED 260 NOT SPECIFIED 260 260
功率 NO NO NO NO NO NO NO NO
电源 5/10 V 5/10 V 5/10 V 5/10 V 5/10 V 5/10 V 5/10 V 5/10 V
可编程功率 NO NO NO NO NO NO NO NO
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.75 mm 1.75 mm 5.33 mm 5.33 mm 1.75 mm 5.33 mm 1.75 mm 1.75 mm
标称压摆率 0.6 V/us 0.6 V/us 0.6 V/us 0.6 V/us 0.6 V/us 0.6 V/us 0.6 V/us 0.6 V/us
最大压摆率 0.3 mA 0.6 mA 0.5 mA 0.6 mA 0.6 mA 0.6 mA 0.5 mA 0.3 mA
供电电压上限 18 V 18 V 18 V 18 V 18 V 18 V 18 V 18 V
标称供电电压 (Vsup) 10 V 10 V 10 V 10 V 10 V 10 V 10 V 10 V
表面贴装 YES YES NO NO YES NO YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 AUTOMOTIVE AUTOMOTIVE COMMERCIAL AUTOMOTIVE AUTOMOTIVE AUTOMOTIVE COMMERCIAL AUTOMOTIVE
端子面层 Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au) Matte Tin (Sn) Matte Tin (Sn) Nickel/Palladium/Gold (Ni/Pd/Au) Matte Tin (Sn) - annealed Nickel/Palladium/Gold (Ni/Pd/Au) Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式 GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING THROUGH-HOLE GULL WING GULL WING
端子节距 1.27 mm 1.27 mm 2.54 mm 2.54 mm 1.27 mm 2.54 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 30 NOT SPECIFIED NOT SPECIFIED 30 NOT SPECIFIED 30 30
标称均一增益带宽 1000 kHz 1000 kHz 1000 kHz 1000 kHz 1000 kHz 1000 kHz 1000 kHz 1000 kHz
最小电压增益 10000 10000 20000 10000 10000 10000 20000 10000
宽带 NO NO NO NO NO NO NO NO
宽度 3.9 mm 3.9 mm 7.62 mm 7.62 mm 3.9 mm 7.62 mm 3.9 mm 3.9 mm
Base Number Matches 1 1 1 1 1 1 1 1
湿度敏感等级 1 1 - - 1 - 1 1
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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