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TS27M4BMP

QUAD OP-AMP, 3500uV OFFSET-MAX, 1MHz BAND WIDTH, PDSO14, TSSOP-14

器件类别:模拟混合信号IC    放大器电路   

厂商名称:ST(意法半导体)

厂商官网:http://www.st.com/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
零件包装代码
TSSOP
包装说明
TSSOP-14
针数
14
Reach Compliance Code
not_compliant
ECCN代码
EAR99
放大器类型
OPERATIONAL AMPLIFIER
架构
VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)
0.0003 µA
标称共模抑制比
80 dB
频率补偿
YES
最大输入失调电压
3500 µV
JESD-30 代码
R-PDSO-G14
JESD-609代码
e0
长度
5 mm
低-偏置
YES
低-失调
NO
微功率
YES
负供电电压上限
标称负供电电压 (Vsup)
功能数量
4
端子数量
14
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装等效代码
TSSOP14,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度)
NOT SPECIFIED
电源
10 V
认证状态
Not Qualified
座面最大高度
1.2 mm
标称压摆率
0.6 V/us
最大压摆率
1.2 mA
供电电压上限
18 V
标称供电电压 (Vsup)
10 V
表面贴装
YES
技术
CMOS
温度等级
MILITARY
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
0.65 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
标称均一增益带宽
1000 kHz
最小电压增益
10000
宽度
4.4 mm
Base Number Matches
1
文档预览
®
TS27M4C,I,M
LOW POWER CMOS
QUAD OPERATIONAL AMPLIFIERS
.
.
.
.
.
VERY LOW CONSUMPTIION :
150µA/op
OUTPUT VOLTAGE CAN SWING TO
GROUND
EXCELLENT PHASE MARGIN ON
CAPACITIVE LOADS
STABLE AND LOW OFFSET VOLTAGE
THREE INPUT OFFSET VOLTAGE
SELECTIONS
N
DIP14
(Plastic Package)
D
SO14
(Plastic Micropackage)
P
TSSOP14
(Thin Shrink Small Outline Package)
ORDER CODES
Part Number
TS27M4C/AC/BC
Temperature
Range
0 C, +70 C
-40 C, +125 C
-55 C, +125 C
o
o
o
o
o
o
Package
N
q
q
q
D
q
q
q
P
q
q
q
DESCRIPTION
The TS274 series are low cost, low power quad
operational amplifiers designed to operate with
single or dual supplies. These operational amplifi-
ers use the SGS-THOMSON silicon gate CMOS
process allowing an excellent consumption-speed
ratio. These series are ideally suited for low con-
sumption applications.
Three power consumptions are available allowing
to have always the best consumption-speed ratio :
q
I
CC
= 10µA/amp. :
TS27L4 (very low power)
q
I
CC
= 150µA/amp. :
TS27M4 (low power)
q
I
CC
= 1mA/amp. :
TS274
(high speed)
These CMOS amplifiers offer very high input im-
pedance and extremely low input currents. The
major advantage versus JFET devices is the very
low input currents drift with temperature
(see figure 2).
September 1998
TS27M4I/AI/BI
TS27M4M/AM/BM
Example :
TS27M4ACN
PIN CONNECTIONS
(top view)
Output 1 1
Inverting Input 1 2
Non-inverting Input 1 3
V
CC
+ 4
Non-inverting Input 2 5
Inverting Input 2 6
Output 2 7
+
-
+
-
-
+
-
+
14 Output 4
13 Inverting Input 4
12 Non-inverting Input 4
11 V
CC
-
10 Non-inverting Input 3
9
8
Inverting Input 3
Output 3
1/8
TS27M4C,I,M
BLOCK DIAGRAM
V
CC
Current
source
xI
Input
differential
Second
stage
Output
stage
Output
V
CC
E
E
MAXIMUM RATINGS
Symbol
V
CC+
V
id
V
i
I
O
I
in
T
oper
Supply Voltage - (note 1)
Differential Input Voltage - (note 2)
Input Voltage - (note 3)
Output Current for V
CC+
15V
Input Current
Operating Free-Air Temperature Range
TS27M4C/AC/BC
TS27M4I/AI/BI
TS27M4M/AM/BM
T
stg
Notes :
Parameter
Value
18
±18
-0.3 to 18
±30
±5
0 to +70
-40 to +125
-55 to +125
-65 to +150
Unit
V
V
V
mA
mA
o
C
Storage Temperature Range
1.
2.
3.
o
C
All voltage values, except differential voltage, are with respect to network ground terminal.
Differential voltages are at the non-inverting input terminal with respect to the inverting input terminal.
The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage.
OPERATING CONDITIONS
Symbol
V
CC
+
Parameter
Supply Voltage
Common Mode Input Voltage Range
Value
3 to 16
0 to V
CC
- 1.5
+
Unit
V
V
V
icm
2/8
V
CC
T
27
T
5
T
6
T
8
T
28
T
1
T
2
T
11
T
12
T
10
T
26
T
24
T
25
T
15
SCHEMATIC DIAGRAM
(for 1/4 TS27M4)
R
2
Input
R1
C1
Input
T
17
T
18
T
7
Output
T
19
T
23
T
3
T
4
T
16
T
20
T
22
T
29
T
9
T
13
T
14
T
21
V
CC
TS27M4C,I,M
3/8
TS27M4C,I,M
ELECTRICAL CHARACTERISTICS
V
CC+
= +10V, V
CC-
= 0V, T
amb
= 25
o
C (unless otherwise specified)
Symbol
V
io
Parameter
Input Offset Voltage
V
O
= 1.4V, V
ic
= 0V TS27M4C/I/M
TS27M4AC/AI/AM
TS27M4BC/BI/BM
T
min
.
T
amb
T
max.
TS27M4C/I/M
TS27M4AC/AI/AM
TS27M4BC/BI/BM
Input Offset Voltage Drift
Input Offset Current - (note 1)
V
ic
= 5V, V
o
= 5V
T
min
.
T
amb
T
max.
Input Bias Current - (note 1)
V
ic
= 5V, V
o
= 5V
T
min
.
T
amb
T
max.
High Level Output Voltage
V
id
= 100mV, R
L
= 100kΩ
T
min
.
T
amb
T
max.
Low Level Output Voltage
V
id
= -100mV
Large Signal Voltage Gain
V
o
= 1V to 6V, R
L
= 100kΩ, V
ic
= 5V
T
min
.
T
amb
T
max.
Gain Bandwidth Product
A
v
= 40dB, R
L
= 100kΩ, C
L
= 100pF
f
in
= 100kHz
Common Mode Rejection Ratio
V
o
= 1.4V, V
ic
= 1V to 7.4V
Supply Voltage Rejection Ratio
+
V
CC
= 5V to 10V ,V
o
= 1.4V
Supply Current (per amplifier)
A
v
= 1, no load, V
o
= 5V
T
min
.
T
amb
T
max.
Output Short Circuit Current
V
id
= 100mV, V
o
= 0V
Output Sink Current
V
id
= -100mV, V
o
= V
CC
Slew-Rate at Unity Gain
R
L
= 100kΩ, C
L
= 100pF, V
i
= 3 to 7V
Phase Margin at Unity Gain
A
v
= 40dB, R
L
= 100kΩ, C
L
= 100pF
Overshoot Factor
Equivalent Input Noise Voltage
f = 1kHz, R
S
= 100Ω
Channel Separation
65
60
30
20
50
8.7
8.6
TS27M4C/AC/BC
Min.
Typ.
1.1
0.9
0.25
Max.
10
5
2
12
6.5
3
TS27M4I/AI/BI
TS27M4M/AM/BM
Min.
Typ.
1.1
0.9
0.25
Max.
mV
10
5
2
12
6.5
3.5
µV/
C
pA
1
100
1
150
8.9
8.7
8.5
50
30
10
50
MHz
1
1
dB
80
80
150
200
250
65
60
80
dB
80
150
200
300
µA
8.9
mV
50
V/mV
1
300
V
1
200
pA
o
Unit
DV
io
I
io
2
2
I
ib
V
OH
V
OL
A
vd
GBP
CMR
SVR
I
CC
I
o
I
sink
SR
∅m
K
ov
e
n
V
O1
/V
O2
mA
60
45
0.6
45
30
38
120
60
mA
45
V/µs
0.6
Degrees
45
30
38
120
%
nV
Hz
√
dB
Note :
1. Maximum values including unavoidable inaccuracies of the industrial test.
4/8
TS27M4C,I,M
TYPICAL CHARACTERISTICS
Figure 1 :
Supply Current (each amplifier)
versus Supply Voltage
T
AMB
= 25
°
C
A
V
= 1
V
O
= V / 2
CC
Figure 2 :
Input Bias Current versus Free Air
Temperature
200
SUPPLY CURRENT, I
CC
(
µ
A)
100
INPUT BIAS CURRENT, I
IB
(pA)
V
CC
= 10V
V
i
= 5V
150
100
10
50
1
0
4
8
12
16
25
50
75
100
125
SUPPLY VOLTAGE, V
CC
(V)
TEMPERATURE, T
AMB
(
°
C)
Figure 3a : High Level Output Voltage versus
High Level Output Current
5
Figure 3b : High Level Output Voltage versus
High Level Output Current
20
OUTPUT VOL TAGE, V
OH
(V)
T
AMB
= 25
°
C
V
ID
= 100mV
V
CC
= 16V
OUTPUT VOLTAGE, V
OH
(V)
4
3
2
1
0
T
AMB
= 25
°
C
V
ID
= 100mV
V
CC
= 5V
16
12
8
4
0
-50
V
CC
= 10V
V
CC
= 3V
-10
-8
-6
-4
-2
0
-40
-30
-20
-10
0
OUTPUT CURRE NT, I
OH
(mA)
OUTPUT CURRENT, I
OH
(mA)
Figure 4a : Low Level Output Voltage versus Low
Level Output Current
1.0
OUTPUT VOLTAGE, V
OL
(V)
V
CC
= 3V
Figure 4b : Low Level Output Voltage versus Low
Level Output Current
3
OUTPUT VOLTAGE, V
OL
(V)
V
CC
= 10V
0.8
V
CC
= 5V
2
V
CC
= 16V
0.6
0.4
0.2
T
AMB
= 25
°
C
V
i
= 0.5V
V
ID
= -1V
1
T
AMB
= 25
°
C
V
i
= 0.5V
V
ID
= -1V
0
1
2
3
0
4
8
12
16
20
OUTPUT CURRENT, I
OL
(mA)
OUTPUT CURRENT, I
OL
(mA)
5/8
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