®
TS420 Series
4A SCRs
SENSITIVE
MAIN FEATURES:
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
4
600 and 700
200
Unit
A
V
µA
K A
G
A
G
A
K
A
DPAK
(TS420-B)
K
A
DESCRIPTION
Thanks to highly sensitive triggering levels, the
TS420 series is suitable for all applications where
the available gate current is limited, such as motor
control for hand tools, kitchen aids, overvoltage
crowbar protection for low power supplies, ...
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space area.
A
G
IPAK
(TS420-H)
K
A
G
TO-220AB
(TS420-T)
ABSOLUTE RATINGS
(limiting values)
Symbol
I
T(RMS)
IT
(AV)
I
TSM
Parameter
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state
current
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
tp = 8.3 ms
Tj = 25°C
tp = 10 ms
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
30
4.5
50
1.2
0.2
- 40 to + 150
- 40 to + 125
A
2
S
A/µs
A
W
°C
Tl = 115°C
Tl = 115°C
Value
4
2.5
33
A
Unit
A
A
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
Tj
September 2000 - Ed: 3
1/8
TS420 Series
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
Symbol
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
V
D
= V
DRM
I
RG
= 10
µA
I
T
= 50 mA
I
G
= 1 mA
I
TM
= 8 A
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 220
Ω
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
tp = 380 µs
R
L
= 3.3 kΩ
R
GK
= 220
Ω
Tj = 125°C
V
D
= 12 V
R
L
= 33
Ω
Test Conditions
MAX.
MAX.
MIN.
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
TS420
200
0.8
0.1
8
5
6
5
1.6
0.85
90
5
1
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
V
D
= 67 % V
DRM
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
R
GK
= 220
Ω
THERMAL RESISTANCES
Symbol
R
th(j-c)
R
th(j-a)
Junction to case (DC)
Junction to ambient (DC)
S = 0.5 cm
²
DPAK
IPAK
TO-220AB
S = copper surface under tab
Parameter
Value
3.0
70
100
60
Unit
°C/W
°C/W
PRODUCT SELECTOR
Voltage (xxx)
Part Number
600 V
TS420-xxxB
TS420-xxxH
TS420-xxxT
X
X
X
700 V
X
X
X
200 µA
200 µA
200 µA
DPAK
IPAK
TO-220AB
Sensitivity
Package
ORDERING INFORMATION
SCR
SERIES
PACKAGE:
B: DPAK
H: IPAK
T: TO-220AB
CURRENT: 4A
SENSITIVITY:
20: 200µA
VOLTAGE:
600: 600V
700: 700V
PACKING MODE
Blank: Tube
-TR: DPAK tape & reel
2/8
TS420 Series
OTHER INFORMATION
Part Number
TS420-x00B
TS420-x00B-TR
TS420-x00H
TS420-x00T
Note:
x = voltage
Marking
TS420x00
TS420x00
TS420x00
TS420x00T
Weight
0.3 g
0.3 g
0.4 g
2.3 g
Base Quantity
75
2500
75
50
Packing mode
Tube
Tape & reel
Tube
Tube
Fig. 1:
Maximum average power dissipation
versus average on-state current.
P(W)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
IT(av)(A)
1.5
2.0
α
360°
Fig. 2-1:
Average and D.C. on-state current
versus case temperature.
IT(av)(A)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
α
= 180°
DC
α
= 180°
Tcase(°C)
0
25
50
75
100
125
2.5
3.0
Fig. 2-2:
Average and D.C. on-state current
versus ambient temperature (device mounted on
FR4 with recommended pad layout) (DPAK).
IT(av)(A)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 3:
Relative variation of thermal impedance
junction to ambient versus pulse duration
(recommended pad layout, FR4 PC board) for
DPAK.
DC
α
= 180°
DPAK
(S = 0.5cm
2
)
IPAK
DC
α
= 180°
Tamb(°C)
0
25
50
75
100
125
3/8
TS420 Series
Fig. 4:
Relative variation of gate trigger current
and holding current versus junction temperature.
IGT,IH,IL [Tj] / IGT ,IH,IL [Tj = 25 °C]
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
Fig. 5:
Relative variation of holding current
versus gate-cathode resistance (typical values).
IH[Rgk] / IH[Rgk = 1k
Ω
]
IGT
IH & IL
Rgk = 1k
Ω
Tj(°C)
-20
0
20
40
60
80
100
120
140
Rgk(kΩ)
Fig. 6:
Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
dV/dt[Rgk] / dV/dt [Rgk = 220
Ω
]
10.00
Tj=125°C
VD=0.67xVDRM
Fig. 7:
Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values).
dV/dt[Cgk] / dV/dt [Rgk = 220
Ω]
10
8
VD = 0.67 x VDRM
Tj = 125°C
Rgk = 220
Ω
1.00
6
4
0.10
2
Rgk(Ω)
Cgk(nF)
0
1.2
1.4
1.6
1.8
2.0
0.01
0
0.2
0.4
0.6
0.8 1.0
0
2
4
6
8
10
12
14
16
18
20
22
Fig. 8:
Surge peak on-state current versus
number of cycles.
Fig. 9:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding values of I²t.
ITSM(A),I
2
t(A
2
s)
300
Tj initial = 25 °C
dI/dt
limitattion
ITSM
ITSM(A)
35
30
25
20
15
10
5
0
1
Repetitive
Tcase = 115 °C
Non repetitiv e
Tj initial = 25 °C
tp = 10ms
One cycle
100
10
I
2
t
Number of cycles
10
100
1000
tp(ms)
1
0.01
0.10
1.00
10.00
4/8
TS420 Series
Fig. 10:
On-state characteristics (maximum
values).
Fig. 11:
Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35
µm)
(DPAK).
Rth(j-a) ( °C/W)
100
ITM(A)
50.0
Tj max.:
Vto = 0.85V
Rd = 90m
Ω
10.0
Tj = Tj max.
80
60
40
Tj = 25°C
1.0
20
0.1
0.0
VTM(V)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
S(cm
2
)
0
0
2
4
6
8
10
12
14
16
18
20
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