TS922, TS922A
Datasheet
Rail-to-rail, high output current, dual operational amplifier
Features
•
•
•
•
•
•
•
•
•
Rail-to-rail input and output
Low noise: 9 nV/√Hz
Low distortion
High output current: 80 mA (able to drive 32 Ω loads)
High-speed: 4 MHz, 1 V/μs
Operating from 2.7 to 12 V
Low input offset voltage: 900 μV max. (TS922A)
ESD internal protection: 2 kV
Latch-up immunity
Flip-chip with backcoating
SO8
Applications
•
•
•
•
Line drivers and actuator drivers
Portable speakers
Instrumentation with low noise as key factor
Multimedia systems and portable equipments
TSSOP8
Description
The
TS922
and the
TS922A
devices are rail-to-rail dual BiCMOS operational
amplifiers optimized and fully specified for 3 V and 5 V operations. These devices
have high output currents which allow low-load impedances to be driven.
Very low noise, low distortion, low offset, and a high output current capability make
these devices an excellent choice for high quality, low voltage, or battery operated
audio systems.
The devices are stable for capacitive loads up to 500 pF.
Product status link
TS922
and
TS922A
DS1117
-
Rev 13
-
July 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
TS922, TS922A
Pin diagrams
1
Pin diagrams
Figure 1.
Pinout for Flip-chip package (top view)
Figure 2.
Pin connections for SO8 and TSSOP8 (top view)
DS1117
-
Rev 13
page 2/18
TS922, TS922A
Absolute maximum ratings and operating conditions
2
Absolute maximum ratings and operating conditions
Table 1.
Absolute maximum ratings (AMR)
Symbol
V
CC
V
id
V
in
T
stg
T
j
—
—
Supply voltage
(1)
Differential input voltage
(2)
Input voltage
(3)
Storage temperature
Maximum junction temperature
Soldering temperature (10 s), leaded version
Soldering temperature (10 s), unleaded version
Flip-chip
R
thja
Thermal resistance junction-to-ambient
(4)
SO8
TSSOP8
R
thjc
Thermal resistance junction-to-case
(4)
HBM: human body model
(5)
ESD
MM: machine model
(6)
CDM: charged device model
(7)
—
—
Latch-up immunity
Output short-circuit duration
SO8
TSSOP8
Parameter
Value
14
±1
(V
CC-
) - 0.3 to (V
CC+
) + 0.3
-65 to 150
150
250
260
90
125
120
40
37
2000
120
1500
200
See note
(8)
mA
V
°C/W
°C
V
Unit
1. All voltage values, except the differential voltage are with respect to network ground terminal.
2. The differential voltage is the non-inverting input terminal with respect to the inverting input terminal. If V
id
>
±1 V, the maximum input current must not exceed ±1 mA. In this case (V
id
> ±1 V), an input series resistor
must be added to limit the input current.
3. Do not exceed 14 V.
4. Short-circuits can cause excessive heating. Destructive dissipation can result from simultaneous short-
circuits on all amplifiers. These values are typical.
5. Human body model: 100 pF discharged through a 1.5 kΩ resistor between two pins of the device, done for
all couples of pin combinations with other pins floating.
6. Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between
two pins of the device with no external series resistor (internal resistor < 5 Ω). This is done for all couples of
pin combinations with other pins floating.
7. Charged device model: all pins and plus package are charged together to the specified voltage and then
discharged directly to ground.
8. There is no short-circuit protection inside the device: short-circuits from the output to V
CC
can cause
excessive heating. The maximum output current is approximately 80 mA, independent of the magnitude of
V
CC
. Destructive dissipation can result from simultaneous short-circuits on all amplifiers.
Table 2.
Operating conditions
Symbol
V
CC
V
icm
T
oper
Parameter
Supply voltage
Common mode input voltage range
Operating free air temperature range
Value
2.7 to 12
(V
CC-
) - 0.2 to (V
CC+
) + 0.2
-40 to 125
Unit
V
°C
DS1117
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Rev 13
page 3/18
TS922, TS922A
Electrical characteristics
3
Electrical characteristics
Table 3.
Electrical characteristics measured at V
CC
= 3 V, V
CC
- = 0 V, V
icm
= V
CC
/2, T
amb
= 25 °C, and R
L
connected to
V
CC
/2 (unless otherwise specified)
Symbol
Parameter
TS922
TS922A
TS922EIJT
V
io
Input offset voltage
T
min
≤ T
amb
≤ T
max
, TS922
T
min
≤ T
amb
≤ T
max
, TS922A
T
min
≤ T
amb
≤ T
max
, TS922EIJT
ΔV
io
/ΔT
I
io
Input offset voltage drift
Input offset current
V
out
= V
CC
/2
T
min
≤ T
amb
≤ T
max
V
out
= V
CC
/2
T
min
≤ T
amb
≤ T
max
R
L
= 10 kΩ
T
min
≤ T
amb
≤ T
max
V
OH
High level output voltage
R
L
= 600 Ω
T
min
≤ T
amb
≤ T
max
R
L
= 32 Ω
R
L
= 10 kΩ
T
min
≤ T
amb
≤ T
max
V
OL
Low level output voltage
R
L
= 600 Ω
T
min
≤ T
amb
≤ T
max
R
L
= 32 Ω
R
L
= 10 kΩ, V
out
= 2 V
p - p
T
min
≤ T
amb
≤ T
max
A
vd
Large signal voltage gain
R
L
= 600 Ω, V
out
= 2 V
p - p
T
min
≤ T
amb
≤ T
max
R
L
= 32 Ω, V
out
= 2 V
p - p
I
CC
GBP
CMR
Total supply current
Gain bandwidth product
Common mode rejection ratio
No load, V
out
= V
CC
/2
T
min
≤ T
amb
≤ T
max
R
L
= 600 Ω
V
icm
= 0 to 3 V
T
min
≤ T
amb
≤ T
max
V
CC
= 2.7 to 3.3 V
T
min
≤ T
amb
≤ T
max
60
56
60
60
50
80
85
4
80
15
16
2
3
3.2
mA
MHz
dB
70
35
V/mV
180
200
2.90
2.90
2.87
2.87
2.63
50
50
100
100
mV
V
15
2
1
30
30
100
100
nA
Test conditions
Min.
Typ.
Max.
3
0.9
1.5
5
1.8
2.5
μV/°C
mV
Unit
I
ib
Input bias current
SVR
I
o
Supply voltage rejection ratio
Output short-circuit current
dB
mA
DS1117
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Rev 13
page 4/18
TS922, TS922A
Electrical characteristics
Symbol
SR
ɸm
G
m
e
n
THD
C
s
Slew rate
Parameter
Test conditions
Min.
0.7
Typ.
1.3
68
12
9
0.005
120
Max.
Unit
V/μs
Degrees
dB
nV/√Hz
%
dB
Phase margin at unit gain
Gain margin
Equivalent input noise voltage
Total harmonic distortion
Channel separation
R
L
= 600 Ω, C
L
= 100 pF
R
L
= 600 Ω, C
L
= 100 pF
f = 1 kHz
V
out
= 2 V
p - p ,
f = 1 kHz, A
v
= 1, R
L
= 600 Ω
Table 4.
Electrical characteristics measured at V
CC
= 5 V, V
CC
- = 0 V, V
icm
= V
CC
/2, T
amb
= 25 °C, and R
L
connected to
V
CC
/2 (unless otherwise specified)
Symbol
Parameter
TS922
TS922A
TS922EIJT
V
io
Input offset voltage
T
min
≤ T
amb
≤ T
max
, TS922
T
min
≤ T
amb
≤ T
max
, TS922A
T
min
≤ T
amb
≤ T
max
, TS922EIJT
ΔV
io
/ΔT
I
io
Input offset voltage drift
Input offset current
V
out
= V
CC
/2
T
min
≤ T
amb
≤ T
max
V
out
= V
CC
/2
T
min
≤ T
amb
≤ T
max
R
L
= 10 kΩ
T
min
≤ T
amb
≤ T
max
V
OH
High level output voltage
R
L
= 600 Ω
T
min
≤ T
amb
≤ T
max
R
L
= 32 Ω
R
L
= 10 kΩ
T
min
≤ T
amb
≤ T
max
V
OL
Low level output voltage
R
L
= 600 Ω
T
min
≤ T
amb
≤ T
max
R
L
= 32 Ω
R
L
= 10 kΩ, V
out
= 2 V
p - p
T
min
≤ T
amb
≤ T
max
A
vd
Large signal voltage gain
R
L
= 600 Ω, V
out
= 2 V
p - p
T
min
≤ T
amb
≤ T
max
R
L
= 32 Ω, V
out
= 2 V
p - p
I
cc
Total supply current
No load, V
out
= V
CC
/2
T
min
≤ T
amb
≤ T
max
20
16
2
3
3.2
mA
70
35
V/mV
300
200
4.9
4.9
4.85
4.85
4.4
50
50
120
120
mV
V
15
2
1
30
30
100
100
nA
Conditions
Min.
Typ.
Max.
3
0.9
1.5
5
1.8
2.5
μV/°C
mV
Unit
I
ib
Input bias current
DS1117
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Rev 13
page 5/18
