TSAL7200
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm,
GaAlAs/GaAs
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm):
∅
5
• Peak wavelength:
λ
p
= 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:
ϕ
= ± 17°
94
8389
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
DESCRIPTION
TSAL7200 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a clear, untinted plastic package.
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• Infrared remote control units with high power requirements
• Free air transmission systems
• Infrared source for optical counters and card readers
PRODUCT SUMMARY
COMPONENT
TSAL7200
I
e
(mW/sr)
60
ϕ
(deg)
± 17
λ
P
(nm)
940
t
r
(ns)
800
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSAL7200
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Note
T
amb
= 25 °C, unless otherwise specified
t
≤
5 s, 2 mm from case
J-STD-051, leads 7 mm soldered
on PCB
t
p
/T = 0.5, t
p
= 100 µs
t
p
= 100 µs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
1.5
160
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81012
Rev. 1.7, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
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115
TSAL7200
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS
Compliant, 940 nm, GaAlAs/GaAs
180
120
100
80
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20 30
40
50
60
70
80
90
100
21212
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
60
40
20
0
0
10
20 30 40
50 60 70
80
90 100
R
thJA
= 230 K/W
21211
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Virtual source diameter
Note
T
amb
= 25 °C, unless otherwise specified
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
Method: 63 % encircled energy
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 µs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 µs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 20 mA
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
f
d
40
340
25
60
500
35
- 0.6
± 17
940
50
0.2
800
800
2.4
200
MIN.
TYP.
1.35
2.6
- 1.8
10
MAX.
1.6
3
UNIT
V
V
mV/K
µA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
mm
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116
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81012
Rev. 1.7, 04-Sep-08
TSAL7200
High Power Infrared Emitting Diode, RoHS
Compliant, 940 nm, GaAlAs/GaAs
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
Vishay Semiconductors
10
1
I
F
- Forward Current (A)
Φ
e
- Radiant Power (mW)
10
2
1000
I
FSM
= 1 A (Single Pulse)
t
p
/T = 0.01
10
0
0.05
0.1
0.5
1.0
10
-1
10
-2
100
10
1
96 11987
10
-1
10
0
10
1
t
p
- Pulse Duration (ms)
0.1
10
0
13602
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Power vs. Forward Current
10
4
I
F
- Forward Current (mA)
1.6
10
3
I
e rel
;
Φ
e rel
1.2
I
F
= 20 mA
0.8
10
2
t
P
= 100
µs
t
P
/T = 0.001
10
1
0.4
10
0
0
13600
1
2
3
4
0
- 10 0 10
94 7993
50
100
140
V
F
- Forward
Voltage
(V)
T
amb
- Ambient Temperature (°C)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
1000
I
e
- Radiant Intensity (mW/sr)
Φ
rel
- Relative Radiant Power
e
1.25
100
1.0
0.75
10
0.5
1
0.25
I
F
= 100 mA
0
890
940
990
0.1
10
0
13601
10
1
10
2
10
3
10
4
14291
I
F
- Forward Current (mA)
λ
-
Wavelength
(nm)
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Power vs. Wavelength
Document Number: 81012
Rev. 1.7, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
117
TSAL7200
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS
Compliant, 940 nm, GaAlAs/GaAs
0°
I
e rel
- Relative Radiant Intensity
10°
20°
30°
ϕ
- Angular Displacement
5.8
± 0.15
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
14329
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS
in millimeters
A
C
± 0.15
R 2.49 (sphere)
(3.5)
± 0.3
7.7
< 0.7
8.7
34.3
± 0.55
Area not plane
5
± 0.15
0.6
+ 0.2
- 0.1
1.5
± 0.25
0.5
0.5
+ 0.15
- 0.05
+ 0.15
- 0.05
technical drawings
according to DIN
specifications
2.54 nom.
6.544-5259.06-4
Issue: 5; 27.09.05
19257
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118
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81012
Rev. 1.7, 04-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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