TSM4953D
30V Dual P-Channel MOSFET
SOP-8
Pin Definition:
1. Source 1
8. Drain 1
2. Gate 1
7. Drain 1
3. Source 2
6. Drain 2
4. Gate 2
5. Drain 2
PRODUCT SUMMARY
V
DS
(V)
-30
90 @ V
GS
= 4.5V
-3.7
R
DS(on)
(mΩ)
60 @ V
GS
= 10V
I
D
(A)
-4.9
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
Application
●
●
Load Switch
PA Switch
Ordering Information
Part No.
TSM4953DCS RLG
Package
SOP-8
Packing
2.5Kpcs / 13” Reel
Dual P-Channel MOSFET
Note:
“G” denotes Halogen Free Product.
Absolute Maximum Rating
(Ta = 25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V.
Pulsed Drain Current, V
GS
@4.5V
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
T
J
, T
STG
Limit
-30
±20
-4.9
-20
-2.6
2.5
1.3
+150
- 55 to +150
Unit
V
V
A
A
A
W
°C
°C
Ta = 25°C
Ta = 70°C
Thermal Performance
Parameter
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
≤
5 sec.
Symbol
RӨ
JC
RӨ
JA
Limit
40
62.5
Unit
°C/W
°C/W
Document Number: DS_P0000106
1
Version: D15
TSM4953D
30V Dual P-Channel MOSFET
Electrical Specifications
(Ta = 25°C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Conditions
V
GS
= 0V, I
D
= -250uA
V
DS
= V
GS
, I
D
= -250µA
V
GS
= ±20V, V
DS
= 0V
V
DS
= -24V, V
GS
= 0V
V
DS
=-5V, V
GS
= -10V
a
Symbol
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
V
SD
Min
-30
-1.0
--
--
-6
--
--
--
--
Typ
--
-1.5
--
--
--
50
75
10
--
Max
--
-3.0
±100
-1.0
--
60
90
--
-1.3
Unit
V
V
nA
µA
A
mΩ
S
V
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
a
V
GS
= -10V, I
D
= -4.9A
V
GS
= -4.5V, I
D
= -3.7A
V
DS
= -15V, I
D
= -4.9A
I
S
= -1.9A, V
GS
= 0V
Q
g
V
DS
= -15V, I
D
= -4.9A,
V
GS
= -10V
Q
gs
Q
gd
C
iss
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
C
oss
C
rss
--
--
--
--
--
--
28
3
7
745
440
120
--
--
--
--
--
--
pF
nC
t
d(on)
V
DD
= -15V, R
L
= 15Ω,
I
D
= -1A, V
GEN
= -10V,
t
r
t
d(off)
--
--
--
--
9
15
75
40
--
--
--
--
nS
R
G
= 6Ω
Turn-Off Fall Time
t
f
Notes:
1. pulse test: PW
≤
300µS, duty cycle
≤
2%
2. For DESIGN AID ONLY, not subject to production testing.
3. Switching time is essentially independent of operating temperature.
Document Number: DS_P0000106
2
Version: D15
TSM4953D
30V Dual P-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25°C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
Document Number: DS_P0000106
3
Version: D15
TSM4953D
30V Dual P-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25°C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: DS_P0000106
4
Version: D15
TSM4953D
30V Dual P-Channel MOSFET
SOP-8 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M
= Month Code for Halogen Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code
Document Number: DS_P0000106
5
Version: D15
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