TSM600N25E
250V N-Channel Power MOSFET
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
Key Parameter Performance
Parameter
V
DS
R
DS(on)
(max)
Q
g
Value
250
0.6
8.4
Unit
V
Ω
nC
Features
●
●
100% avalanche tested
Improved ESD performance
Block Diagram
Ordering Information
Part No.
TSM600N25ECH C5G
Package
TO-251
Packing
75pcs / Tube
TSM600N25ECP ROG
TO-252
2.5kpcs / 13” Reel
Note:
“G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
N-Channel MOSFET
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
(Note 2)
Symbol
V
DS
V
GS
Tc = 25ºC
Tc = 100ºC
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dv/dt
T
J
T
STG
(Note 1)
(Note 1)
o
Limit
250
±30
8
3.6
32
147
8
5.2
52
4.5
150
-55 to +150
Unit
V
V
A
A
A
mJ
A
mJ
W
V/ns
ºC
o
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
(Note 3)
Power Dissipation @ T
C
= 25 C
Peak Diode Recovery
Operating Junction Temperature
Storage Temperature Range
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
R
ӨJC
R
ӨJA
Limit
2.4
110
Unit
o
C/W
1/7
Version: A14
TSM600N25E
250V N-Channel Power MOSFET
Electrical Specifications
(Tc=25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Dynamic
Total Gate Charge
(Note 4,5)
(Note 4,5)
(Note 4)
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 4A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 250V, V
GS
= 0V
V
DS
= 200V, Tc = 125ºC
V
GS
= ±30V, V
DS
= 0V
V
DS
= 30V, I
D
= 4A
Symbol
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
g
fs
Min
250
--
3
--
--
--
--
Typ
--
0.5
--
--
--
--
7.5
Max
--
0.6
5
1
10
±100
--
Unit
V
Ω
V
µA
µA
S
Q
g
V
DS
= 200V, I
D
= 8A,
V
GS
= 10V
Q
gs
Q
gd
C
iss
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
oss
C
rss
--
--
--
--
--
--
8.4
1.9
4
423
74
12
--
--
--
--
--
--
pF
nC
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
(Note 4,5)
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
(Note 4,5)
t
d(on)
V
DD
= 125V, I
D
= 8A,
R
GEN
=25Ω
t
r
t
d(off)
t
f
--
--
--
--
14
25
30
14
--
--
--
--
ns
(Note 4,5)
(Note 4,5)
Turn-Off Delay Time
Turn-Off Fall Time
(Note 4,5)
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulse Drain-Source Diode
Forward Current
Diode-Source Forward Voltage
Reverse Recovery Time
(Note 4)
(Note 4)
I
S
I
SM
V
GS
= 0V, I
S
= 8A
V
GS
= 0V, I
S
= 8A
dI
F
/dt = 100A/µs
V
SD
t
rr
Q
rr
--
--
--
--
--
--
--
--
157
0.6
8
32
1.5
--
--
A
A
V
ns
µC
Reverse Recovery Charge
Note:
1. Pulse width limited by safe operating area
2. L=3.68mH, I
AS
=8A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25ºC
3. I
SD
≤8A,
di/dt
≤
200A/µs, V
DD
≤
BV
DS
, Starting T
J
=25℃
4 Pulse test: pulse width
≤300µs,
duty cycle
≤2%
5. Switching time is essentially independent of operating temperature.
2/7
Version: A14
TSM600N25E
250V N-Channel Power MOSFET
Electrical Characteristics Curves
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/7
Version: A14
TSM600N25E
250V N-Channel Power MOSFET
Electrical Characteristics Curves
Drain Current vs. Case Temperature
BV
DSS
vs. Junction Temperature
V
TH
vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area
Transient Thermal Impedance
4/7
Version: A14
TSM600N25E
250V N-Channel Power MOSFET
TO-251 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
M
= Year Code
= Month Code for Halogen Free Product
(O=Jan,
P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
= Lot Code
L
5/7
Version: A14
