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TSM650P02CXRFG

20V P-Channel Power MOSFET

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

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TSM650P02CX
20V P-Channel Power MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
Key Parameter Performance
Parameter
V
DS
V
GS
=- 4.5V
R
DS(on)
(max)
V
GS
= -2.5V
V
GS
= -1.8V
Q
g
Value
-20
65
85
130
6.4
Unit
V
nC
Features
Fast switching
Suited for -1.8V gate drive applications
Halogen-free
Block Diagram
Ordering Information
Part No.
Package
Packing
TSM650P02CX RFG
SOT-23
3kcs / 7” Reel
Note:
“G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds
P-Channel MOSFET
Absolute Maximum Ratings
(T
C
= 25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
Power Dissipation @ T
C
= 25℃
Operating Junction Temperature
Storage Temperature Range
T
C
= 25°C
T
C
= 100°C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
T
STG
Limit
-20
±10
-4.1
-2.6
-16.4
1.56
150
-55 to +150
Unit
V
V
A
A
A
W
°C
°C
Thermal Performance
Parameter
Thermal Resistance - Junction to Ambient
Symbol
R
ӨJA
Limit
80
Unit
°C/W
1/5
Version: A14
TSM650P02CX
20V P-Channel Power MOSFET
Electrical Specifications
(T
C
= 25°C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= -250µA
V
GS
= -4.5V, I
D
= -3A
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
(Note 2)
Dynamic
Total Gate Charge
(Note 2,3)
Gate-Source Charge
(Note 2,3)
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
(Note 2,3)
Turn-On Rise Time
(Note 2,3)
Turn-Off Delay Time
(Note 2,3)
(Note 2,3)
Conditions
Symbol
BV
DSS
Min
-20
--
--
--
Typ
--
52
73
105
-0.6
--
--
--
5.5
Max
--
65
85
130
-0.8
-1
-10
±100
--
Unit
V
V
GS
= -2.5V, I
D
= -2A
V
GS
= -1.8V, I
D
= -1.5A
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -20V, V
GS
= 0V
V
DS
= -16V, T
J
= 125°C
V
GS
= ±10V, V
DS
= 0V
V
DS
= -10V, I
D
= -3A
R
DS(on)
V
GS(TH)
I
DSS
I
GSS
g
fs
V
µA
nA
S
-0.4
--
--
--
--
Q
g
V
DS
= -10V, I
D
= -3A,
V
GS
= -4.5V
Q
gs
Q
gd
C
iss
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
C
oss
C
rss
--
--
--
--
--
--
6.4
0.9
1.6
515
55
20
--
--
--
--
--
--
pF
nC
t
d(on)
V
DD
= -10V, I
D
= -1A,
V
GS
= -4.5V, R
GEN
= 25Ω
t
r
t
d(off)
t
f
--
--
--
--
5
17.4
40.7
11.4
--
--
--
--
ns
Turn-Off Fall Time
(Note 2,3)
Source-Drain Diode Ratings and Characteristic
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulse Drain-Source Diode
Forward Current
Diode-Source Forward Voltage
Integral reverse diode in
the MOSFET
V
GS
= 0V, I
S
= -1A
I
S
I
SM
V
SD
--
--
--
--
--
--
-4.1
-16.4
-1
A
A
V
Note:
1.
Pulse width limited by safe operating area
2.
Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
3.
Switching time is essentially independent of operating temperature.
2/5
Version: A14
TSM650P02CX
20V P-Channel Power MOSFET
Electrical Characteristics Curve
Continuous Drain Current vs. T
C
-I
D
, Continuous Drain Current (A)
Normalized R
DS
(on) VS. T
J
Normalized On Resistance (mW)
T
C
, Case Temperature (°C)
Threshold Voltage vs. Junction Temperature
Normalized Gate Threshold Voltage (V)
-V
GS
, Gate to Source Voltage (V)
T
J
, Junction Temperature (°C)
Gate Charge Waveform
T
J
, Junction Temperature (°C)
Qg, Gate Charge (nC)
Maximum Safe Operating Area
-I
D
, Continuous Drain Current (A)
Normalized Thermal Transient Impedance Curve
Normalized Thermal Response (R
θJA
)
Square Wave Pulse Duration (s)
-V
DS
, Drain to Source Voltage (V)
3/5
Version: A14
TSM650P02CX
20V P-Channel Power MOSFET
SOT-23 Mechanical Drawing
Unit: Millimeters
Marking Diagram
62
= Device Code
Y
= Year Code
M
= Month Code for Halogen Free Product
(O=Jan,
P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
4/5
Version: A14
TSM650P02CX
20V P-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5/5
Version: A14
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参数对比
与TSM650P02CXRFG相近的元器件有:TSM650P02CX。描述及对比如下:
型号 TSM650P02CXRFG TSM650P02CX
描述 20V P-Channel Power MOSFET 20V P-Channel Power MOSFET
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