600V N-Channel Power MOSFET
TSM6N60
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Gate
2. Drain
3. Source
PRODUCT SUMMARY
V
DS
(V)
600
R
DS(on)
(Ω)
1.25 @ V
GS
=10V
I
D
(A)
6
Features
●
High power and current handing capability.
●
Low R
DS(ON)
1.25Ω (Max.)
●
Low gate charge typical @ 20.7nC (Typ.)
Block Diagram
Ordering Information
Part No.
TSM6N60CH C5G
Package
TO-251
Packing
75pcs / Tube
2.5kpcs / 13” Reel
N-Channel MOSFET
TSM6N60CP ROG
TO-252
Note:
“G” denotes for Halogen Free
Absolute Maximum Ratings
(Tc = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
(Note 2)
o
Symbol
V
DS
V
GS
Tc = 25ºC
Tc = 100ºC
I
D
I
DM
E
AS
P
TOT
T
J
Limit
600
±30
6
4.2
24
180
89
150
-55 to +150
Unit
V
V
A
A
A
mJ
W
ºC
o
Single Pulse Avalanche Energy
Total Power Dissipation @ T
C
= 25 C
Operating Junction Temperature
Storage Temperature Range
T
STG
Note1:
Repetitive Rating : Pulse width limited by maximum junction temperature.
Note2:
L=10mH, I
AS
=6.0A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25ºC
C
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
Symbol
RӨ
JC
RӨ
JA
Limit
1.4
50
Unit
o
C/W
1/8
Version: B14
600V N-Channel Power MOSFET
Electrical Specifications
(Tc = 25
o
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Dynamic
(Note a)
TSM6N60
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 3.0A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 600V, V
GS
= 0V
V
GS
= ±30V, V
DS
= 0V
Symbol
BV
DSS
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
Min
600
--
2
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
1.1
2.75
--
--
20.7
5.1
5.4
1248
117
11.3
21
7.6
57
6.2
--
0.86
Max
--
1.25
4
1
±100
28
--
--
--
--
--
44
15
107
8
6.0
1.5
Unit
V
Ω
V
µA
nA
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
(Note a)
V
DS
= 480V, I
D
= 6A,
V
GS
= 10V
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
nC
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode Ratings and Characteristic
Source Current
Diode Forward Voltage
I
S
= 6.0A, V
GS
= 0V
Note:
Pulse Width < 300µs, Duty Cycle < 2%.
V
GS
= 10V, I
D
= 6A,
V
DD
= 300V, R
GEN
=25Ω
t
r
t
d(off)
t
f
I
S
V
SD
ns
A
V
2/8
Version: B14
600V N-Channel Power MOSFET
Electrical Characteristics Curve
(Tc = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
TSM6N60
Capacitance
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/8
Version: B14
600V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Threshold Voltage vs. Junction Temperature
Maximum Safe Operating Area
TSM6N60
Normalized Thermal Transient Impedance Curve
4/8
Version: B14
600V N-Channel Power MOSFET
TSM6N60
TO-251 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
M
= Year Code
= Month Code for Halogen Free Product
(O=Jan,
P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
= Lot Code
L
5/8
Version: B14
