TSSP58038
www.vishay.com
Vishay Semiconductors
IR Receiver Module for Light Barrier Systems
FEATURES
• Up to 2 m for presence sensing
• Uses modulated bursts at 38 kHz
• 940 nm peak wavelength
• PIN diode and sensor IC in one package
• Low supply current
• Shielding against EMI
19026
• Visible light is suppressed by IR filter
• Insensitive to supply voltage ripple and noise
• Supply voltage: 2.5 V to 5.5 V
MECHANICAL DATA
Pinning:
1 = OUT, 2 = GND, 3 = V
S
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The TSSP58038 is a compact infrared detector module for
presence sensing applications. It receives 38 kHz
modulated signals and has a peak sensitivity of 940 nm.
This component has not been qualified according to
automotive specifications.
APPLICATIONS
• Reflective sensors for hand dryers, towel or soap
dispensers, water faucets, toilet flush
• Vending machine fall detection
• Security and pet gates
• Person or object vicinity activation
PARTS TABLE
Carrier frequency
Package
Pinning
Dimensions (mm)
Mounting
Application
38 kHz
TSSP58038
Minicast
1 = OUT, 2 = GND, 3 = V
S
5.0 W x 6.95 H x 4.8 D
Leaded
Presence sensors
BLOCK DIAGRAM
16833_8
PRESENCE SENSING
+3 V
3
33 kΩ
V
S
1
Input
AMP
Band
pass
Demo-
dulator
OUT
Envelope
signal
38 kHz
IR emitter
+3 V
2
PIN
GND
Out to
μC
Rev. 1.4, 31-Aug-15
1
Document Number: 82479
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSSP58038
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply voltage
Supply current
Output voltage
Output current
Junction temperature
Storage temperature range
Operating temperature range
Power consumption
T
amb
≤
85 °C
TEST CONDITION
SYMBOL
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
VALUE
-0.3 to +6
5
-0.3 to (V
S
+ 0.3)
5
100
-25 to +85
-25 to +85
10
UNIT
V
mA
V
mA
°C
°C
°C
mW
Note
• Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification
is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability.
ELECTRICAL AND OPTICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Supply current (pin 3)
Supply voltage
Transmission distance
E
v
= 0, test signal see fig. 1,
IR diode TSAL6200,
I
F
= 400 mA
I
OSL
= 0.5 mA, E
e
= 2 mW/m
2
,
test signal see fig. 1
Pulse width tolerance:
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
t
pi
- 5/f
o
< t
po
< t
pi
+ 6/f
o
,
test signal see fig. 1
Angle of half transmission
distance
TEST CONDITION
E
v
= 0, V
S
= 5 V
E
v
= 40 klx, sunlight
SYMBOL
I
SD
I
SH
V
S
d
MIN.
0.55
-
2.5
-
TYP.
0.7
0.8
-
25
MAX.
0.9
-
5.5
-
UNIT
mA
mA
V
m
Output voltage low (pin 1)
V
OSL
E
e min.
E
e max.
ϕ
1/2
-
-
100
mV
mW/m
2
W/m
2
deg
Minimum irradiance
-
0.7
1.2
Maximum irradiance
Directivity
50
-
-
± 45
-
-
Rev. 1.4, 31-Aug-15
2
Document Number: 82479
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSSP58038
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Optical Test Signal
(IR diode TSAL6200, I
F
= 0.4 A, 30 pulses, f = f
0
, t = 10 ms)
Vishay Semiconductors
t
on
, t
off
- Output Pulse Width (ms)
E
e
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
1
10
100
1000
10 000
λ
= 950 nm,
optical test
signal,
Fig. 3
t
off
t
on
t
t
pi
*
* t
pi
V
O
V
OH
V
OL
T
10/f
0
is recommended for optimal function
16110
Output Signal
1)
7/f
0
< t
d
< 15/f
0
2)
t
pi
- 5/f
0
< t
po
< t
pi
+ 6/f
0
t
po 2)
t
t
d
1)
E
e
- Irradiance (mW/m
2
)
Fig. 4 - Output Pulse Diagram
Fig. 1 - Output Active Low
1.0
1.2
t
po
- Output Pulse Width (ms)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
Output pulse width
Input burst length
E
e min.
/E
e
- Rel. Responsivity
1.0
0.8
0.6
0.4
0.2
0.0
f = f
0
± 5 %
Δ
f(3 dB) = f
0
/10
λ
= 950 nm,
optical test
signal,
Fig. 1
10
100
1000
10 000 100 000
0.7
16925
0.9
1.1
1.3
E
e
- Irradiance
(mW/m
2
)
f/f
0
- Relative Frequency
Fig. 2 - Pulse Length and Sensitivity in Dark Ambient
Fig. 5 - Frequency Dependence of Responsivity
E
e
E
e min.
- Threshold Irradiance (mW/m
2
)
Optical Test Signal
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-30
-10
10
30
50
70
90
600 µs
t = 60 ms
Output Signal,
(see fig. 4)
600 µs
t
94 8134
V
O
V
OH
V
OL
t
on
t
off
t
T
amb
- Ambient Temperature (°C)
Fig. 6 - Sensitivity vs. Ambient Temperature
Fig. 3 - Output Function
Rev. 1.4, 31-Aug-15
3
Document Number: 82479
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSSP58038
www.vishay.com
Vishay Semiconductors
0°
10°
20°
30°
S (λ)
rel
- Relative Spectral Sensitivity
1.2
1.0
0.8
1.0
0.6
0.9
0.4
0.2
0
750
0.8
40°
50°
60°
70°
0.7
80°
850
950
1050
1150
19259
0.6
0.4
0.2
0
94 8408
λ
- Wavelength (nm)
d
rel
- Relative Transmission Distance
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
Fig. 9 - Vertical Directivity
0°
10°
20°
30°
2.0
E
e min.
-
Sensitivity
(mW/m
2
)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2
3
4
5
40°
1.0
0.9
0.8
50°
60°
70°
0.7
80°
0.6
19258
0.4
0.2
0
d
rel
- Relative Transmission Distance
V
S
-
Supply
Voltage (V)
Fig. 10 - Sensitivity vs. Supply Voltage
Fig. 8 - Horizontal Directivity
The typical application of this device is a reflective or beam
break sensor with active low “detect” or “no detect”
information contained in its output. Applications requiring
up to 2 m beam break or 1 m reflective range benefit from
the lower gain of these sensors because they are less
sensitive to stray signal from the emitter, simplifying the
mechanical design.
Example for a sensor hardware:
IR Receiver
TSSP6P38
Emitter
TSAL6200
Separation
to avoid
crosstalk by
stray
light inside
the housing
There should be no common window in front of the emitter
and detector in order to avoid crosstalk via guided light
through the window.
Rev. 1.4, 31-Aug-15
4
Document Number: 82479
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TSSP58038
www.vishay.com
PACKAGE DIMENSIONS
in millimeters
5
(4)
2.8
4.8
Vishay Semiconductors
R2
8.25 ± 0.3
6.95 ± 0.3
(5.55)
(1.54)
30.5 ± 0.5
1.1
0.9
0.85 max.
2.54 nom.
0.7 max.
2.54 nom.
0.5 max.
1.2 ± 0.2
Marking area
technical drawings
according to DIN
specifications
Not indicated to lerances ± 0.2
Drawing-No.: 6.550-5263.01-4
Issue: 12; 16.04.10
19009
R2
Rev. 1.4, 31-Aug-15
5
Document Number: 82479
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
