TSUS5400, TSUS5401, TSUS5402
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
FEATURES
•
•
•
•
•
•
•
•
•
•
•
Package type: leaded
Package form: T-1¾
Dimensions (in mm): Ø 5
Leads with stand-off
Peak wavelength:
λ
p
= 950 nm
High reliability
Angle of half intensity:
ϕ
= ± 22°
Low forward voltage
Suitable for high pulse current operation
Good spectral matching with Si photodetectors
Compliant to RoHS directive 2002/95/EC and
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
94
8390
in
DESCRIPTION
TSUS5400 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue-gray tinted plastic package.
APPLICATIONS
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
PRODUCT SUMMARY
COMPONENT
I
e
(mW/sr)
ϕ
(deg)
± 22
± 22
± 22
λ
P
(nm)
950
950
950
t
r
(ns)
800
800
800
TSUS5400
14
TSUS5401
17
TSUS5402
20
Note
Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSUS5400
TSUS5401
TSUS5402
Note
MOQ: minimum order quantity
PACKAGING
Bulk
Bulk
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
T-1¾
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Note
T
amb
= 25 °C, unless otherwise specified
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
150
300
2.5
170
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
t
p
/T = 0.5, t
p
= 100 µs
t
p
= 100 µs
t
≤
5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
Document Number: 81056
Rev. 1.7, 25-Jun-09
For technical questions, contact:
emittertechsupport@vishay.com
www.vishay.com
1
TSUS5400, TSUS5401, TSUS5402
Vishay Semiconductors
180
Infrared Emitting Diode, 950 nm,
GaAs
120
100
80
60
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20 30
40
50
60
70
80
90
100
21314
R
thJA
= 230 K/W
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
40
20
0
0
10
20 30 40
50 60 70
80
90 100
21313
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Virtual source diameter
Note
T
amb
= 25 °C, unless otherwise specified
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 1.5 A
I
F
= 100 mA
I
F
= 1.5 A
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 20 mA
SYMBOL
V
F
TK
VF
I
R
C
j
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
r
t
f
t
f
d
30
- 0.8
± 22
950
50
0.2
800
400
800
400
2.9
MIN.
TYP.
1.3
- 1.3
100
MAX.
1.7
UNIT
V
mV/K
µA
pF
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
TYPE DEDICATED CHARACTERISTICS
PARAMETER
Forward voltage
TEST CONDITION
I
F
= 1.5 A, t
p
= 100 µs
PART
TSUS5400
TSUS5401
TSUS5402
TSUS5400
I
F
= 100 mA, t
p
= 20 ms
Radiant intensity
I
F
= 1.5 A, t
p
= 100 µs
TSUS5401
TSUS5402
TSUS5400
TSUS5401
TSUS5402
TSUS5400
Radiant power
I
F
= 100 mA, t
p
= 20 ms
TSUS5401
TSUS5402
Note
T
amb
= 25 °C, unless otherwise specified
www.vishay.com
2
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81056
Rev. 1.7, 25-Jun-09
SYMBOL
V
F
V
F
V
F
I
e
I
e
I
e
I
e
I
e
I
e
φ
e
φ
e
φ
e
7
10
15
60
85
120
MIN.
TYP.
2.2
2.2
2.2
14
17
20
140
160
190
13
14
15
MAX.
3.4
3.4
2.7
35
35
35
UNIT
V
V
V
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW
mW
mW
TSUS5400, TSUS5401, TSUS5402
Infrared Emitting Diode, 950 nm,
GaAs
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
10
1
I
e
- Radiant Intensity (mW/sr)
1000
TSUS 5401
100
TSUS 5402
Vishay Semiconductors
I
F
- Forward Current (A)
I
FSM
= 2.5 A ( Single Pulse )
t
p
/T = 0.01
10
0
0.05
0.1
0.5
1.0
10
-1
10
-2
10
TSUS5400
1
94 7989
10
-1
10
0
10
1
t
p
- Pulse Duration (ms)
10
2
94 7997
10
0
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Intensity vs. Forward Current
10
4
10
3
10
2
10
1
10
0
10
-1
94 7996
1000
Φ
- Radiant Power (mW)
e
TSUS 5402
100
TSUS5400
10
I
F
- Forward Current (mA)
1
0
1
2
3
4
0.1
10
0
94 7998
V
F
- Forward
Voltage
(V)
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Radiant Power vs. Forward Current
1.2
V
F rel
- Relative Forward
Voltage
(V)
1.6
1.1
I
F
= 10 mA
I
e rel
;
Φ
e rel
1.2
I
F
= 20 mA
0.8
1.0
0.9
0.8
0.7
0
20
40
60
80
100
0.4
94 7990
T
amb
- Ambient Temperature (°C)
0
- 10 0 10
94 7993
50
100
140
T
amb
- Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Document Number: 81056
Rev. 1.7, 25-Jun-09
For technical questions, contact:
emittertechsupport@vishay.com
www.vishay.com
3
TSUS5400, TSUS5401, TSUS5402
Vishay Semiconductors
Infrared Emitting Diode, 950 nm,
GaAs
0°
10°
20°
30°
Φ
e rel
- Relative Radiant Power
1.0
I
e rel
- Relative Radiant Intensity
1.25
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.75
0.5
0.25
I
F
= 100 mA
0
900
950
λ
-
Wavelength
(nm)
1000
0.6
94 7999
0.4
0.2
0
0.2
0.4
0.6
94 7994
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS
in millimeters
A
C
± 0.15
R 2.49 (sphere)
± 0.3
± 0.3
± 0.15
(4.1)
5.8
11.9
< 0.7
8.7
7.7
Area not plane
± 0.55
34.9
1.1
± 0.25
Ø 5
± 0.15
1 min.
0.5
0.5
+ 0.15
- 0.05
+ 0.15
- 0.05
technical drawings
according to DIN
specifications
2.54 nom.
6.544-5258.01-4
Issue: 5; 19.05.09
96 12119
www.vishay.com
4
For technical questions, contact:
emittertechsupport@vishay.com
Document Number: 81056
Rev. 1.7, 25-Jun-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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