首页 > 器件类别 > 分立半导体 > 二极管

TZM5243B-GS18

Zener Diode, 13V V(Z), 5%, 0.5W,

器件类别:分立半导体    二极管   

厂商名称:Vishay Telefunken (Vishay)

厂商官网:http://www.vishay.com

下载文档
TZM5243B-GS18 在线购买

供应商:

器件:TZM5243B-GS18

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
是否Rohs认证
不符合
Reach Compliance Code
unknown
配置
SINGLE
二极管类型
ZENER DIODE
最大动态阻抗
13 Ω
JESD-609代码
e0
元件数量
1
最高工作温度
175 °C
最大功率耗散
0.5 W
标称参考电压
13 V
表面贴装
YES
端子面层
Tin/Lead (Sn/Pb)
最大电压容差
5%
工作测试电流
9.3 mA
Base Number Matches
1
文档预览
TZM5221B...TZM5267B
Vishay Telefunken
Silicon Z–Diodes
Features
D
Very sharp reverse characteristic
D
Very high stability
D
Electrical data identical with the devices
1N5221B...1N5267B
D
Low reverse current level
D
V
Z
–tolerance
±
5%
Applications
Voltage stabilization
94 9371
Order Instruction
Type
TZM5221B
Ordering Code
TZM5221B–GS08
TZM5221B–GS18
Remarks
Tape and Reel (2.500 pcs)
Tape and Reel (10.000 pcs)
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
<300K/W, T
amb
=25
°
C
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on PC board 50 mmx50 mmx1.6 mm
Symbol
R
thJA
Value
500
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.1
Unit
V
Document Number 85609
Rev. A3, 12-Mar-01
www.vishay.com
1 (4)
TZM5221B...TZM5267B
Vishay Telefunken
Type
TZM5221B
TZM5222B
TZM5223B
TZM5224B
TZM5225B
TZM5226B
TZM5227B
TZM5228B
TZM5229B
TZM5230B
TZM5231B
TZM5232B
TZM5233B
TZM5234B
TZM5235B
TZM5236B
TZM5237B
TZM5238B
TZM5239B
TZM5240B
TZM5241B
TZM5242B
TZM5243B
TZM5244B
TZM5245B
TZM5246B
TZM5247B
TZM5248B
TZM5249B
TZM5250B
TZM5251B
TZM5252B
TZM5253B
TZM5254B
TZM5255B
TZM5256B
TZM5257B
TZM5258B
TZM5259B
TZM5260B
TZM5261B
TZM5262B
TZM5263B
TZM5264B
TZM5265B
TZM5266B
TZM5267B
1)
V
Znom1)
V
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
I
ZT
for r
zjT
mA
20
< 30
20
< 30
20
< 30
20
< 30
20
< 29
20
< 28
20
< 24
20
< 23
20
< 22
20
< 19
20
< 17
20
< 11
20
<7
20
<7
20
<5
20
<6
20
<8
20
<8
20
< 10
20
< 17
20
< 22
20
< 30
9.5
< 13
9.0
< 15
8.5
< 16
7.8
< 17
7.4
< 19
7.0
< 21
6.6
< 23
6.2
< 25
5.6
< 29
5.2
< 33
5.0
< 35
4.6
< 41
4.5
< 44
4.2
< 49
3.8
< 58
3.4
< 70
3.2
< 80
3.0
< 93
2.7
< 105
2.5
< 125
2.2
< 150
2.1
< 170
2.0
< 185
1.8
< 230
1.7
< 270
W
r
zjk
at I
ZK
mA
< 1200
0.25
< 1250
0.25
< 1300
0.25
< 1400
0.25
< 1600
0.25
< 1600
0.25
< 1700
0.25
< 1900
0.25
< 2000
0.25
< 1900
0.25
< 1600
0.25
< 1600
0.25
< 1600
0.25
< 1000
0.25
< 750
0.25
< 500
0.25
< 500
0.25
< 600
0.25
< 600
0.25
< 600
0.25
< 600
0.25
< 600
0.25
< 600
0.25
< 600
0.25
< 600
0.25
< 600
0.25
< 600
0.25
< 600
0.25
< 600
0.25
< 600
0.25
< 600
0.25
< 600
0.25
< 600
0.25
< 600
0.25
< 600
0.25
< 600
0.25
< 700
0.25
< 700
0.25
< 800
0.25
< 900
0.25
< 1000
0.25
< 1100
0.25
< 1300
0.25
< 1400
0.25
< 1400
0.25
< 1600
0.25
< 1700
0.25
W
I
R
at V
R
A
V
< 100
1.0
< 100
1.0
< 75
1.0
< 75
1.0
< 50
1.0
< 25
1.0
< 15
1.0
< 10
1.0
<5
1.0
<5
2.0
<5
2.0
<5
3.0
<5
3.5
<5
4.0
<3
5.0
<3
6.0
<3
6.5
<3
6.5
<3
7.0
<3
8.0
<2
8.4
<1
9.1
< 0.5
9.9
< 0.1
10
< 0.1
11
< 0.1
12
< 0.1
13
< 0.1
14
< 0.1
14
< 0.1
15
< 0.1
17
< 0.1
18
< 0.1
19
< 0.1
21
< 0.1
21
< 0.1
23
< 0.1
25
< 0.1
27
< 0.1
30
< 0.1
33
< 0.1
36
< 0.1
39
< 0.1
43
< 0.1
46
< 0.1
47
< 0.1
52
< 0.1
56
m
TK
VZ
%/K
< –0.085
< –0.085
< –0.080
< –0.080
< –0.075
< –0.070
< –0.065
< –0.060
<
±
0.055
<
±
0.030
<
±
0.030
< +0.038
< +0.038
< +0.045
< +0.050
< +0.058
< +0.062
< +0.065
< +0.068
< +0.075
< +0.076
< +0.077
< +0.079
< +0.082
< +0.082
< +0.083
< +0.084
< +0.085
< +0.086
< +0.086
< +0.087
< +0.088
< +0.089
< +0.090
< +0.091
< +0.091
< +0.092
< +0.093
< +0.094
< +0.095
< +0.095
< +0.096
< +0.096
< +0.097
< +0.097
< +0.097
< +0.098
Based on dc–measurement at thermal equilibrium; case temperature maintained at 30
°
C
±
2
°
C.
Document Number 85609
Rev. A3, 12-Mar-01
www.vishay.com
2 (4)
TZM5221B...TZM5267B
Vishay Telefunken
Dimensions in mm
96 12070
Document Number 85609
Rev. A3, 12-Mar-01
www.vishay.com
3 (4)
TZM5221B...TZM5267B
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.com
4 (4)
Document Number 85609
Rev. A3, 12-Mar-01
查看更多>
热门器件
热门资源推荐
器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
需要登录后才可以下载。
登录取消