TZX...
Vishay Semiconductors
Silicon Epitaxial Planar Z–Diodes
Features
D
Very sharp reverse characteristic
D
Low reverse current level
D
Very high stability
D
Low noise
D
Available with tighter tolerances
Applications
Voltage stabilization
94 9367
Order Instruction
Type
TZX2V4A
Ordering Code
TZX2V4A–TAP
Remarks
Ammopack
Absolute Maximum Ratings
T
j
= 25_C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
l=4 mm, T
L
=25
°C
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
T
j
= 25_C
Parameter
Junction ambient
Test Conditions
l=4 mm, T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Electrical Characteristics
T
j
= 25_C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
Document Number 85614
Rev. A6, 08-Aug-02
www.vishay.com
1 (8)
TZX...
Vishay Semiconductors
V
Zmax
.
Ty e
Type
V
Zmin.
(V)
Ty e
Type
TZX2V4A
TZX2V4B
TZX2V7A
TZX2V7B
TZX2V7C
TZX3V0A
TZX3V0B
TZX3V0C
TZX3V3A
TZX3V3B
TZX3V3C
TZX3V6A
TZX3V6B
TZX3V6C
TZX3V9A
TZX3V9B
TZX3V9C
TZX4V3A
TZX4V3B
TZX4V3C
TZX4V3D
TZX4V7A
TZX4V7B
TZX4V7C
TZX4V7D
TZX5V1A
TZX5V1B
TZX5V1C
TZX5V1D
TZX5V6A
TZX5V6B
TZX5V6C
TZX5V6D
TZX5V6E
V
Zmin.
(V)
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.4
5.5
5.6
V
Zmax.
r
Zmax.
(V)
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
5.5
5.6
5.7
5.8
5.9
(W)
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
40
40
40
40
40
at I
Z
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
I
Rmax.
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
at V
R
(V)
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1
1
1
1
1
1
1
1
1
1.5
1.5
1.5
1.5
2
2
2
2
2
2
2
2
2
2
2
2
2
I
Rmax2)
(mA)
50
50
10
10
10
6
6
6
2
2
2
2
2
2
2
2
2
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
at V
R2)
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
(V)
2.6
26
TZX2V4
2.3
23
TZX2V7
2.5
2.9
TZX3V0
2.8
3.2
TZX3V3
3.1
3.5
TZX3V6
3.4
3.8
TZX3V9
3.7
4.1
TZX4V3
4.0
40
4.5
45
TZX4V7
4.4
44
4.9
49
TZX5V1
4.8
48
5.3
53
TZX5V6
5.2
5.9
www.vishay.com
2 (8)
Document Number 85614
Rev. A6, 08-Aug-02
TZX...
Vishay Semiconductors
Ty e
Type
V
Zmin.
(V)
V
Zmax
.
Ty e
Type
TZX6V2A
TZX6V2B
TZX6V2C
TZX6V2D
TZX6V2E
TZX6V8A
TZX6V8B
TZX6V8C
TZX6V8D
TZX7V5A
TZX7V5B
TZX7V5C
TZX7V5D
TZX8V2A
TZX8V2B
TZX8V2C
TZX8V2D
TZX9V1A
TZX9V1B
TZX9V1C
TZX9V1D
TZX9V1E
TZX10A
TZX10B
TZX10C
TZX10D
TZX11A
TZX11B
TZX11C
TZX11D
TZX12A
TZX12B
TZX12C
TZX12D
TZX12X
TZX13A
TZX13B
TZX13C
V
Zmin.
(V)
5.7
5.8
6.0
6.1
6.3
6.4
6.6
6.7
6.9
7.0
7.2
7.3
7.5
7.7
7.9
8.1
8.3
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.2
10.4
10.7
10.9
11.1
11.4
11.6
11.9
12.2
11.44
12.4
12.6
12.9
V
Zmax.
r
Zmax.
(V)
6.0
6.1
6.3
6.4
6.6
6.7
6.9
7.0
7.2
7.3
7.6
7.7
7.9
8.1
8.3
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.1
10.3
10.6
10.8
11.1
11.3
11.6
11.9
12.1
12.4
12.7
12.03
12.9
13.1
13.4
(W)
15
15
15
15
15
15
15
15
15
15
15
15
15
20
20
20
20
20
20
20
20
20
25
25
25
25
25
25
25
25
35
35
35
35
35
35
35
35
at I
Z
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
I
Rmax.
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
at V
R
(V)
3
3
3
3
3
3.5
3.5
3.5
3.5
5.0
5.0
5.0
5.0
6.2
6.2
6.2
6.2
6.8
6.8
6.8
6.8
6.8
7.5
7.5
7.5
7.5
8.2
8.2
8.2
8.2
9.5
9.5
9.5
9.5
9.5
10
10
10
I
Rmax2).
at V
R2)
(mA)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
(V)
2.0
2.0
2.0
2.0
2.0
3.0
3.0
3.0
3.0
3.5
3.5
3.5
3.5
4.0
4.0
4.0
4.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
(V)
TZX6V2
5.7
6.6
TZX6V8
6.4
64
7.2
72
TZX7V5
7.0
70
7.9
79
TZX8V2
7.7
77
8.7
87
TZX9V1
8.5
9.7
TZX10
9.5
95
10.6
10 6
TZX11
10.4
10 4
11.6
11 6
TZX12
11.4
12.7
TZX13
12.4
13.4
Document Number 85614
Rev. A6, 08-Aug-02
www.vishay.com
3 (8)
TZX...
Vishay Semiconductors
Ty e
Type
V
Zmin.
(V)
TZX14
13.2
V
Zmax
.
Ty e
Type
TZX14A
TZX14B
TZX14C
TZX15A
TZX15B
TZX15C
TZX15X
TZX16A
TZX16B
TZX16C
TZX18A
TZX18B
TZX18C
TZX20A
TZX20B
TZX20C
TZX22A
TZX22B
TZX22C
TZX24A
TZX24B
TZX24C
TZX24X
TZX27A
TZX27B
TZX27C
TZX27X
TZX30A
TZX30B
TZX30C
TZX30X
TZX33A
TZX33B
TZX33C
TZX36A
TZX36B
TZX36C
TZX36X
V
Zmin.
(V)
13.2
13.5
13.8
14.1
14.5
14.9
14.35
15.3
15.7
16.3
16.9
17.5
18.1
18.8
19.5
20.2
20.9
21.6
22.3
22.9
23.6
24.3
22.61
25.2
26.2
27.2
26.99
28.2
29.2
30.2
29.02
31.2
32.2
33.2
34.2
35.3
36.4
35.36
V
Zmax.
r
Zmax.
(V)
13.7
14.0
14.3
14.7
15.1
15.5
15.09
15.9
16.5
17.1
17.7
18.3
19.0
19.7
20.4
21.2
21.9
22.6
23.3
24.0
24.7
25.5
23.77
26.6
27.6
28.6
28.39
29.6
30.6
31.6
30.51
32.6
33.6
34.5
35.7
36.8
38.0
37.19
(W)
35
35
35
40
40
40
40
45
45
45
55
55
55
60
60
60
65
65
65
70
70
70
70
80
80
80
80
100
100
100
100
120
120
120
140
140
140
140
at I
Z
(mA)
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
I
Rmax.
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
at V
R
(V)
11
11
11
11.5
11.5
11.5
11.5
12
12
12
13
13
13
15
15
15
17
17
17
19
19
19
19
21
21
21
21
23
23
23
23
25
25
25
27
27
27
27
I
Rmax2).
at V
R2)
(mA)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
(V)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
(V)
14.3
TZX15
14.1
14 1
15.5
15 5
TZX16
15.3
17.1
TZX18
16.9
19.0
TZX20
18.8
21.2
TZX22
20.9
23.3
TZX24
22.9
22 9
25.5
25 5
TZX27
25.2
25 2
28.6
28 6
TZX30
28.2
28 2
31.6
31 6
TZX33
31.2
34.5
TZX36
34.2
34 2
38.0
38 0
2) Additional measurement
Please note: Additional measurement of voltage group 9V1 to 36 I
R
at 95 % V
Zmin
= < 35 nA at T
j
25
_C
www.vishay.com
4 (8)
Document Number 85614
Rev. A6, 08-Aug-02
TZX...
Vishay Semiconductors
Characteristics
(T
j
= 25_C unless otherwise specified)
R
thJA
– Therm. Resist. Junction / Ambient ( K/W )
500
V
Ztn
– Relative Voltage Change
1.3
V
Ztn
=V
Zt
/V
Z
(25°C)
1.2
TK
VZ
=10
10
–4
/K
8
6
10
–4
/K
10
–4
/K
10
–4
/K
10
–4
/K
400
300
l
200
100
T
L
=constant
0
0
5
10
15
20
l – Lead Length ( mm )
l
1.1
4
2
1.0
0.9
0.8
–60
0
–2 10
–4
/K
–4
10
–4
/K
0
60
120
180
240
95 9611
95 9599
T
j
– Junction Temperature (
°C
)
Figure 1. Thermal Resistance vs. Lead Length
Figure 4. Typical Change of Working Voltage vs.
Junction Temperature
TK
VZ
– Temperature Coefficient of V
Z
( 10
–4
/K )
15
600
P
tot
– Total Power Dissipation ( mW )
500
400
300
200
100
0
0
95 9602
10
5
I
Z
=5mA
0
–5
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
40
80
120
160
200
T
amb
– Ambient Temperature (
°C
)
95 9600
Figure 2. Total Power Dissipation vs.
Ambient Temperature
1000
D
V – Voltage Change ( mV )
Z
Figure 5. Temperature Coefficient of Vz vs. Z–Voltage
200
C
D
– Diode Capacitance ( pF )
T
j
=25°C
100
150
V
R
=2V
100
T
j
=25°C
I
Z
=5mA
10
50
1
0
95 9598
0
5
10
15
20
25
95 9601
0
5
10
15
20
25
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 3. Typical Change of Working Voltage under
Operating Conditions at T
amb
=25°C
Figure 6. Diode Capacitance vs. Z–Voltage
Document Number 85614
Rev. A6, 08-Aug-02
www.vishay.com
5 (8)
