TZX-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
•
•
•
•
•
•
Very sharp reverse characteristic
Low reverse current level
e2
Very high stability
Low noise
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
94 9367
Applications
• Voltage stabilization
Mechanical Data
Case:
DO35 Glass case
Weight:
approx. 125 mg
Cathode Band Color:
black
Packaging codes/options:
TAP/10 k per Ammopack (52 mm tape), 30 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test condition
l = 4 mm, T
L
= 25 °C
Symbol
P
tot
I
Z
T
j
T
stg
Value
500
P
tot
/V
Z
175
- 65 to + 175
Unit
mW
mA
°C
°C
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Test condition
l = 4 mm, T
L
= constant
Symbol
R
thJA
Value
300
Unit
K/W
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
I
F
= 200 mA
Symbol
V
F
Min
Typ.
Max
1.5
Unit
V
Document Number 85614
Rev. 2.1, 27-Mar-07
www.vishay.com
1
TZX-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber Partnumber
group
Zener Voltage
V
Z
at I
Z
V
min
TZX2V4
TZX2V7
TZX2V4A
TZX2V4B
TZX2V7A
TZX2V7B
TZX2V7C
TZX3V0
TZX3V0A
TZX3V0B
TZX3V0C
TZX3V3
TZX3V3A
TZX3V3B
TZX3V3C
TZX3V6
TZX3V6A
TZX3V6B
TZX3V6C
TZX3V9
TZX3V9A
TZX3V9B
TZX3V9C
TZX4V3
TZX4V3A
TZX4V3B
TZX4V3C
TZX4V3D
TZX4V7
TZX4V7A
TZX4V7B
TZX4V7C
TZX4V7D
TZX5V1
TZX5V1A
TZX5V1B
TZX5V1C
TZX5V1D
TZX5V6
TZX5V6A
TZX5V6B
TZX5V6C
TZX5V6D
TZX5V6E
TZX6V2
TZX6V2A
TZX6V2B
TZX6V2C
TZX6V2D
TZX6V2E
TZX6V8
TZX6V8A
TZX6V8B
TZX6V8C
TZX6V8D
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
6
6.1
6.3
6.4
6.6
6.7
6.9
V
max
2.5
2.6
2.7
2.8
2.9
3
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5
5.1
5.2
5.3
5.5
5.6
5.7
5.8
5.9
6
6.1
6.3
6.4
6.6
6.7
6.9
7
7.2
Dynamic
Resistance
r
Z
at I
Z
Ω
max
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
40
40
40
40
40
15
15
15
15
15
15
15
15
15
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Test
Current
I
Z
mA
I
R
µA
max
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
1
1
1
1
1
1
1
1
1
1.5
1.5
1.5
1.5
2
2
2
2
2
2
2
2
2
2
2
2
2
3
3
3
3
3
3.5
3.5
3.5
3.5
Reverse Leakage Current
at V
R
V
I
R1)
µA
max
50
50
10
10
10
6
6
6
2
2
2
2
2
2
2
2
2
1
1
1
1
6
5
4
3
2
2
2
2
1
1
1
1
1
3
3
3
3
3
2
2
2
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2
2
2
2
2
2
2
2
2
2
2
2
2
4
4
4
4
4
4
4
4
4
at V
R1)
V
www.vishay.com
2
Document Number 85614
Rev. 2.1, 27-Mar-07
TZX-Series
Vishay Semiconductors
Partnumber Partnumber
group
Zener Voltage
V
Z
at I
Z
V
min
TZX7V5
TZX7V5A
TZX7V5B
TZX7V5C
TZX7V5D
TZX7V5X
TZX8V2
TZX8V2A
TZX8V2B
TZX8V2C
TZX8V2D
TZX9V1
TZX9V1A
TZX9V1B
TZX9V1C
TZX9V1D
TZX9V1E
TZX10
TZX10A
TZX10B
TZX10C
TZX10D
TZX11
TZX11A
TZX11B
TZX11C
TZX11D
TZX12
TZX12A
TZX12B
TZX12C
TZX12D
TZX12X
TZX13
TZX13A
TZX13B
TZX13C
TZX14
TZX14A
TZX14B
TZX14C
TZX15
TZX15A
TZX15B
TZX15C
TZX15X
TZX16
TZX16A
TZX16B
TZX16C
TZX18A
TZX18A
TZX18B
TZX18C
TZX20A
TZX20A
TZX20B
TZX20C
7
7.2
7.3
7.5
7.07
7.7
7.9
8.1
8.3
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.2
10.4
10.7
10.9
11.1
11.4
11.6
11.9
12.2
11.44
12.4
12.6
12.9
13.2
13.5
13.8
14.1
14.5
14.9
14.35
15.3
15.7
16.3
16.9
17.5
18.1
18.8
19.5
20.2
V
max
7.3
7.6
7.7
7.9
7.45
8.1
8.3
8.5
8.7
8.9
9.1
9.3
9.5
9.7
9.9
10.1
10.3
10.6
10.8
11.1
11.3
11.6
11.9
12.1
12.4
12.7
12.03
12.9
13.1
13.4
13.7
14
14.3
14.7
15.1
15.5
15.09
15.9
16.5
17.1
17.7
18.3
19
19.7
20.4
21.2
Dynamic
Resistance
r
Z
at I
Z
Ω
max
15
15
15
15
15
20
20
20
20
20
20
20
20
20
25
25
25
25
25
25
25
25
35
35
35
35
35
35
35
35
35
35
35
40
40
40
40
45
45
45
55
55
55
60
60
60
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
Test
Current
I
Z
mA
I
R
µA
max
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
5
5
5
5
5
6.2
6.2
6.2
6.2
6.8
6.8
6.8
6.8
6.8
7.5
7.5
7.5
7.5
8.2
8.2
8.2
8.2
9.5
9.5
9.5
9.5
9.5
10
10
10
11
11
11
11.5
11.5
11.5
11.5
12
12
12
13
13
13
15
15
15
Reverse Leakage Current
at V
R
V
I
R1)
µA
max
30
30
30
30
30
0.1
0.1
0.1
0.1
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
6.65
6.84
6.94
7.13
6.72
7.32
7.5
7.7
7.98
8.08
8.27
8.46
8.65
8.84
9.03
9.22
9.41
9.69
9.88
10.2
10.4
10.5
10.8
11
11.3
11.6
10.9
11.8
12
12.3
12.5
12.8
13.1
13.4
13.8
14.2
13.6
14.5
14.9
15.5
16.1
16.6
17.2
17.9
18.5
19.2
at V
R1)
V
Document Number 85614
Rev. 2.1, 27-Mar-07
www.vishay.com
3
TZX-Series
Vishay Semiconductors
Partnumber Partnumber
group
Zener Voltage
V
Z
at I
Z
V
min
TZX22
TZX22A
TZX22B
TZX22C
TZX24
TZX24A
TZX24B
TZX24C
TZX24X
TZX27
TZX27A
TZX27B
TZX27C
TZX27X
TZX30
TZX30A
TZX30B
TZX30C
TZX30X
TZX33
TZX33A
TZX33B
TZX33C
TZX36
TZX36A
TZX36B
TZX36C
TZX36X
1)
Dynamic
Resistance
r
Z
at I
Z
Ω
max
65
65
65
70
70
70
70
80
80
80
80
100
100
100
100
120
120
120
140
140
140
140
Test
Current
I
Z
mA
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
I
R
µA
max
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Reverse Leakage Current
at V
R
V
17
17
17
19
19
19
19
21
21
21
21
23
23
23
23
25
25
25
27
27
27
27
I
R1)
µA
max
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
19.9
20.5
21.2
21.8
22.4
23.1
21.5
23.9
24.9
25.8
25.6
26.8
27.7
28.7
27.6
29.6
30.6
31.5
32.5
33.5
34.6
33.6
at V
R1)
V
V
max
21.9
22.6
23.3
24
24.7
25.5
23.77
26.6
27.6
28.6
28.39
29.6
30.6
31.6
30.51
32.6
33.6
34.5
35.7
36.8
38
37.19
20.9
21.6
22.3
22.9
23.6
24.3
22.61
25.2
26.2
27.2
26.99
28.2
29.2
30.2
29.02
31.2
32.2
33.2
34.2
35.3
36.4
35.36
Additional measurement
NOTE: Additional measurement of voltage group TZM9V1 to TZX36, I
R
at 95 % V
Zmin
≤
40 nA at T
j
= 25 °C
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
R
thJA
- Therm. Resist. Junction Ambient (K/W)
P
tot
- Total Power Dissipation (mW)
500
400
300
l
200
100
T
L
= constant
0
0
5
10
15
20
95 9611
600
500
400
300
200
100
0
0
l
40
80
120
160
200
I - Lead Length (mm)
95 9602
T
amb
- Ambient Temperature (°C)
Figure 1. Thermal Resistance vs. Lead Length
Figure 2. Total Power Dissipation vs. Ambient Temperature
www.vishay.com
4
Document Number 85614
Rev. 2.1, 27-Mar-07
TZX-Series
Vishay Semiconductors
1000
C
D
- Diode Capacitance (pF)
V
Z
-
Voltage
Change (mV)
200
T
j
= 25 °C
150
V
R
= 2
V
T
j
= 25 °C
100
100
I
Z
= 5 mA
10
50
1
0
95 9598
0
5
10
15
20
25
0
95 9601
5
10
15
20
25
V
Z
- Z-Voltage (V)
V
Z
- Z-Voltage (V)
Figure 3. Typical Change of Working Voltage under Operating
Conditions at T
amb
= 25 °C
Figure 6. Diode Capacitance vs. Z-Voltage
V
Ztn
- Relative
Voltage
Change
1.3
I
F
- Forward Current (mA)
V
Ztn
=
V
Zt
/V
Z
(25 °C)
100
10
T
j
= 25 °C
1.2
1.1
1.0
0.9
0.8
- 60
95 9599
TK
VZ
= 10 x 10
-4
/K
8
x 10
-4
/K
6 x 10
-4
/K
4 x 10
-4
/K
2 x 10
-4
/K
1
0
- 2 x 10 /K
- 4 x 10
-4
/K
-4
0.1
0.01
0.001
0
60
120
180
240
95 9605
0
0.2
0.4
0.6
0.8
1.0
T
j
- Junction Temperature (°C)
V
F
- Forward
Voltage
(V)
Figure 4. Typical Change of Working Voltage vs.
Junction Temperature
Figure 7. Forward Current vs. Forward Voltage
TK
VZ
- Temperature Coefficient of
V
Z
(10
-4
/K)
15
100
80
I
Z
- Z-Current (mA)
P
tot
= 500 mW
T
amb
= 25 °C
10
60
40
20
0
5
I
Z
= 5 mA
0
-5
0
95 9600
10
20
40
30
V
Z
- Z-Voltage (V)
50
0
95 9604
4
6
8
12
20
V
Z
- Z-Voltage (V)
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
Figure 8. Z-Current vs. Z-Voltage
Document Number 85614
Rev. 2.1, 27-Mar-07
www.vishay.com
5
测试/测量
